BY 225 DIODE Search Results

Contextual Info: DACO SEMICONDUCTOR CO.,LTD. SILICON CA RBID E SCH O TTKY DIODE 12A Features TO -247 Package 1200 V Schottky Rectifier 225 °C Maximum Operating Temperature Zero Reverse Recovery Current Positive Temperature Coefficient of V Temperature Independent Switching Behavior

Zener Diode SOT-23 929b

Abstract: 13.8 8w zener diode zener diode t5 MMSZ4V7T1 MOTOROLA 929B 953b X2 diode zener zener diode T3 Marking diodes zener de 3.5 volts 938B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes 3 Cathode Manufacturing Locations: 1 Anode WAFER FAB: Phoenix, Arizona

Contextual Info: Die Datasheet GA01PNS150-CAU Silicon Carbide PiN Diode Chip VRRM o IF @ 25 C = = 15000 V 1A Features •     15 kV blocking 250 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching

1N9148

Abstract: 1n9145 1S1555 1s1555 diode 1N4148 1N4150 1N4151 1N4448 1N4531 1N914
Contextual Info: DO-35 °r NOTES: 1. CATHODE IS MARKED BY BAND 2. ALL DIMENSIONS ARE IN M.M. DIM MIN MAX A 25,40 - 4,44 B 3,03 C 0,46 0,56 D 1,52 2,29 DIODES AMMO PACK DO-35 Switching Diodes 500 mW Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified Type

Contextual Info: MOTOROLA Order this document by MMSD301T1/D SEMICONDUCTOR TECHNICAL DATA SO D -123 Schottky B arrier Diodes M M SD 301T1 M M SD 701T1 The MMSD301T1, and MMSD701T1 devices are s p in -o ffs of our popular M M BD301LT1, and MMBD701LT1 S O T -2 3 devices. They are designed fo r

MARKING YA SOT-23

Contextual Info: MOTOROLA Order this document by BAW156LT1/D SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Switching Diode BAW156LT1 This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times M otorola Preferred Device

Contextual Info: MOTOROLA Order this document by MMBD6100LT1/D SEMICONDUCTOR TECHNICAL DATA M o n o lithic Dual S w itching Diode MMBD6 1 0 0 LT1 3 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage vR Vdc Forward Current if mAdc iFM(surge) 70 200

Contextual Info: MOTOROLA O rder th is docum ent by MMBV432LT1/D SEMICONDUCTOR TECHNICAL DATA S ilic o n Tlining Diode M M B V432LT1 This device is designed for FM tuning, general frequency control and tuning, or any top-of-the-line application requiring back-to-back diode configuration for minimum

SKIIP DRIVER

Abstract: SemiSel SK chopper transformer skiip gb 120 342GDL120-411CTV SKiiP342GDL120-411CTV
Contextual Info: SKiiP 342GDL120-411CTV I. Power section 3 phase bridge Ts = 25°C unless otherwise specified Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM

BAS21SLT1

Contextual Info: BAS21SLT1 Preferred Device Dual Series High Voltage Switching Diode • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: Class 1 ESD Rating – Machine Model: Class B http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage

Contextual Info: Die Datasheet GA01PNS80-CAU Silicon Carbide PiN Diode Chip VRRM o IF @ 25 C = = 8000 V 2A Features •     8 kV blocking 250 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching

Contextual Info: MOTOROLA Order this document by MMBD2837LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2837LT1 MMBD2838LT1 ANODE 3 O n i CATHODE W O 1 ° 2 ANODE MAXIMUM RATINGS EACH DIODE Rating Peak Reverse Voltage D.C. Reverse Voltage Symbol

SOT-23 marking SW

Contextual Info: MOTOROlLA Order this document by m m bd 283slti/d SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE ANODE 3 % -N — ° 1 N ° 2 CATHODE 2 CASE 3 1 8-08, STYLE 12 SOT-23 TO-236AB MAXIMUM RATINGS (EACH DIODE)

MMBD6100LT1

Contextual Info: MOTOROLA Order this document by MMBD6100LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode MMBD6100LT1 ANODE 1 3 CATHODE 3 2 ANODE 1 2 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc

Motorola 417

Abstract: BAS21LT1
Contextual Info: MOTOROLA Order this document by BAS21LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Switching Diode 3 CATHODE BAS21LT1 Motorola Preferred Device 1 ANODE 3 MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current

BAV170LT1

Contextual Info: MOTOROLA Order this document by BAV170LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode BAV170LT1 Motorola Preferred Device This switching diode has the following features: • Low Leakage Current Applications • Medium Speed Switching Times

Contextual Info: 1N8035-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •         RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability

Contextual Info: 1N8028-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge

MMSZ22ET1

Abstract: MMSZ10ET1 MMSZ11ET1 MMSZ12ET1 MMSZ13ET1 MMSZ15ET1 MMSZ16ET1 MMSZ18ET1 MMSZ20ET1 MMSZ24ET1
Contextual Info: MMSZ2V4ET1 Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style.

BAV74LT1

Contextual Info: ON Semiconductort Monolithic Dual Switching Diode BAV74LT1 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS Characteristic

MMBZ5221ELT1

Contextual Info: MMBZ52xxELT1G Series, SZMMBZ52xxELT1G Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well

Contextual Info: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous

BA216

Abstract: BA164 1S44 BA217 1N457JAN 1N458JAN 1N459JAN 1N461A BA130 BA218
Contextual Info: FAIRCHILD DIODES DIODES GENERAL PURPOSE DIODES BY DESCENDING BV (Cont’d) GLASS PACKAGE Item DEVICE NO. BV V Min *R nA Max @ vF Vr V V Max If mA @ c trr PF ns Max Max Package No. 1 BA218 50 50 25 1.0 10 5.0 — ' DO-35 2 1S44 50 50 10 1.15 10 6.0 — DO-35

1n645

Abstract: 1N649 1n646 1n648
Contextual Info: TYPES 1N645 THRU 1N649, 1N645A SILICON GENERAL PURPOSE DIODES B U L L E T IN N O . D L -S 7 3 9 1 2 5 , O C T O B E R 1 9 6 6 - R E V IS E D M A R C H 1 9 7 3 225 V to 600 V • 400 m A A V E R A G E • Rugged Double-Plug Construction m echa nica l d a ta