BY 104 Search Results

a14q

Contextual Info: TMS28F008SET, TMS28F008SEB, TMS28F800SET. TMS28F800SEB TMS28F008SZT, TMS28F008SZB, TMS28F800SZT, TMS28F800SZB 1048576 BY 8-BJT/524288 BY 16-BIT BOOT-BLOCK FLASH MEMORIES • • • • • • • • Organization. . . 1048576 By 8 Bits 524288 By 16 Bits

29f8008

Abstract: 29F800
Contextual Info: TMS29F800T, TMS29F8O0B 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES • Single Power Supply Supports 5 V ±10% Read/Write Operation Organization. . . 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector

Contextual Info: TMS626412B, TMS626812B 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS693 - OCTOBER 1997 TMS626412B DGEPACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses)

TMS626812

Contextual Info: TMS626812B 1 048 576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS693A- OCTOBER 1997 - REVISED APRIL 199B Organization 1048576 by 8 Bits by 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses)

TMS6264

Abstract: TMS626812
Contextual Info: TMS626412A, TMS626812A 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS691A - JULY 1997 - REVISED OCTOBER 1997 TMS626412A DGE PACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving

Contextual Info: TMS29LF800T, TMS29LF800B 1048576 BY 8-BIT/524288 BY 16-BIT FLASH MEMORIES SMJS826B - SEPTEMBER 1996 - REVISED OCTOBER 1987 * Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation • f • • Organization 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture

Contextual Info: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS851A - NOVEMBER 1997 - REVISED MARCH 1998 • Organization . . . 1048576 By 8 Bits 524288 By 16 Bits • Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks

Contextual Info: TMS28F008Axy,TMS28F800Axy 1048576 BY 8-B1T/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES • Organization . . . • 1 1 • 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte Parameter Blocks - One 96K-Byte Main Block - Seven 128K-Byte Main Blocks

M5M5W817KT

Contextual Info: MITSUBISHI LSIs 2002.9.3 Ver. 0.0 M5M5W817KT - 70HI 8388608-BIT 524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5W817KT is a f amily of low v oltage 8Mbit static RAMs organized as 524288-words by 16-bit / 1048576-words by 8-bit,

CO2V

Contextual Info: TMS664814 TMS664164 2097152 BY 8-BIT BY 4-BANK, 1048576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES Organization. . . 1048576 x 16 Bits x 4 Banks 2097152 x 8 Bits x 4 Banks 3.3-V Power Supply ±10% Tolerance Four Banks for On-Chip Interleaving for

Contextual Info: TMS664814, TMS664164 2097152 BY 8-BIT BY 4-BANK, 1048576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS69QA-DECEMBER 1996 - REVISED NOVEMBER 1997 Organization . . . 1048 576 x 16 Bits x 4 Ban ks 2097152 x 8 Bits x 4 Banks Pipeline Architecture Single-Cycle

Contextual Info: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SM JS851A-NO VEM BER 1997 - REVISED MARCH 1998 • Organization . . . 1048576 By 8 Bits 524288 By 16 Bits • Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks

29f8008

Abstract: 29F800 29F800 code TMS29F800T 44-PIN TMS29F800B
Contextual Info: TMS29F800T, TMS29F800B 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES SMJS835B – MAY 1997 – REVISED OCTOBER 1997 D D D D D D D D D D " Single Power Supply Supports 5 V 10% Read/Write Operation Organization . . . 1 048576 By 8 Bits 524 288 By 16 Bits

ALY 34

Abstract: 28f800 TMS2800 R-PDSO-G44 Package A10q ALY-34
Contextual Info: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES S M JS 851A - N O VEM BER 1997 - REVISED M ARCH 1998 Organization . . . 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks

Contextual Info: TMS29LF800T, TMS29LF800B 1048576 BY 8-BIT/524288 BY 16-BIT FLASH MEMORIES SMJS828B – SEPTEMBER 1996 – REVISED OCTOBER 1997 D D D D D D D D D D Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization 1 048 576 By 8 Bits 524 288 By 16 Bits

SM038

Abstract: TMS626812
Contextual Info: TMS626412B, TMS626812B 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS893 - OCTOBER 1997 tCK3 C Lt s 3 *CK2 (CL = 2) <AC2 (CL=2) •626x12B-12 12 ns 15 ns 8 ns 9 ns 64 ms '626x128-10 10 ns 15 ns 6 ns

44-PIN

Abstract: TMS29LF800B TMS29LF800T 29LF800
Contextual Info: TMS29LF800T, TMS29LF800B 1048576 BY 8-BIT/524288 BY 16-BIT FLASH MEMORIES SMJS828B – SEPTEMBER 1996 – REVISED OCTOBER 1997 D D D D D D D D D D Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization 1 048 576 By 8 Bits 524 288 By 16 Bits

S693

Abstract: TMS626812
Contextual Info: TMS626412B, TMS626812B 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES S M O S 693-O C TO BE R 1997 TM S626412B D G EP A C K A G E TOP VIEW vcc [ 1 NC [ 2 SYNCHRONOUS CLOCK CYCLE TIME 44 ] V SS 43 ] NC

2E50

Abstract: 3E10 CIE1931 LBW1025N LBW1026N LBW1028N EIAJED4701100
Contextual Info: Specification for Approval Version 1.0 Part No. : LBW1025N LBW1026N LBW1028N comments LUXPIA Co., Ltd. Designed by Checked by Approved by / / / Date : . . Approved by Approved by Approved by / . 948-1, Dunsan-Li Bongdong-Eup, Wanju-Gun, JeonBuk, Korea

LGH1025

Abstract: a103 transistor 3E10 3E12
Contextual Info: Specification for Approval Version 1.0 Part No. : LGH1025 LGH1026 LGH1028 LGH1029 comments LUXPIA Co., Ltd. Designed by Checked by Approved by / / / Date : . . Approved by Approved by Approved by / . 948-1, Dunsan-Li Bongdong-Eup, Wanju-Gun, JeonBuk, Korea

LWH1025N

Abstract: LWH1028N 3e19 JESD22-A103 3E10 3E12
Contextual Info: Specification for Approval Version 1.2 Part No. : LWH1025N LWH1026N LWH1028N LWH1029N comments LUXPIA Co., Ltd. Designed by Checked by Approved by / / / Date : . . Approved by Approved by Approved by / . 948-1, Dunsan-Li Bongdong-Eup, Wanju-Gun, JeonBuk, Korea

2E22

Abstract: LBH1025N 2e30 1E70 2E10 2E15 LBH1026N LBH1028N LBH1029N LBH1025
Contextual Info: Specification for Approval Version 1.0 Part No. : LBH1025N LBH1026N LBH1028N LBH1029N comments LUXPIA Co., Ltd. Designed by Checked by Approved by / / / Date : . . Approved by Approved by Approved by / . 948-1, Dunsan-Li Bongdong-Eup, Wanju-Gun, JeonBuk, Korea

SSC Seoul P4

Abstract: ssc 6200 ED-4701
Contextual Info: SPECIFICATION ITEM FULL COLOR SIDE VIEW LED MODEL SFAF3L CUSTOMER Customer Approved by Approved by Approved by / / / Supplier Drawn by Checked by Approved by / / / SEOUL SEMICONDUCTOR CO., LTD. Rev. 1.00 SFAF3L Contents 1. Features 02 2. Application 02 3.

smd zener diode BLUE BAND

Abstract: 1L20 1L30 CIE1931 1L35 A/capacitor 1L35
Contextual Info: Specification for Approval Version 1.0 Part No. : LWM1070 comments LUXPIA Co., Ltd. Designed by Checked by Approved by / / / Date : . . Approved by Approved by Approved by / . 948-1, Dunsan-Li Bongdong-Eup, Wanju-Gun, JeonBuk, Korea Date : / . Tel 82-63-260-4500