BVV 26 E Search Results

Contextual Info: t ' tT IC AN306 AN 306 VTR * 7 I IS APC mn/VTR Color APC Circuit ^/D escription AN 306 l i , VTR <r>ij y — APC E1S# ¿ l T t ä l t ? tl fWHÜ&T-fo I ^ iS /F e a tu re s • s i , ti 7 — n É tt-y tf& z .fr ñ íñ 'é • a p c ias&<7 3f ^ i) r x t s M i S i ^ w

GPIA30R

Abstract: LG-0201 PI-288 GP1A30R GP1A50HR GPIA52HR pi288 SPI-503 FLH 351 lg 505
Contextual Info: - • s ja s x - f 329- - I K - — 342 — C-tiíEUtMi : > - 343- - 344- P I -28 P I -27 P I -26 P I -25 lfl.fi'n?-. l/ *i> a i H <T Anode j) Cathode P I -29 (3) Collector (T) K m ilte r c (J) Anode (2> Cathode (3) Collector Emitter *<I|DF3-3P-2DSA

9833 ic datasheet

Abstract: arm gsm transistor abe 438 transistor k83 GSM1800 GSM1900 GSM900 VWS22120 GMSK modulator K3082
Contextual Info: Philips Semiconductors The latest GSM Baseband product from Philips Semiconductors is the OneC-GPRS+ and it is designed to meet the exacting requirements of the GSM cellular system. It is based on the OneCTM architecture, and performs the core baseband functionality within a GSM

UAA3536

Abstract: CGY2015 HVQFN40 GSM Transceiver ZERO-IF PCF506
Contextual Info: Philips Semiconductors The UAA3536 is a low-power GSM triple-band transceiver based on the N-ZIF Near-Zero Intermediate Frequency RF architecture. The UAA3536 is a GSM900/1800/1900 GPRS class 12-capable single-chip RF solution, with edge 4RX capabilities.

pj74

Abstract: TLP850 TLP851 PJ 74 TLP852 TLP826 TLP815 TLP1230 TLP814 TLP822
Contextual Info: — 326 — « 5? £ TLP814 T± m 7, £ 2 TLP815 •' f- immi im m 1.5 0.4 3 0.5 TLP818 & m I cU f m in % ) m I f UnA) , V c E Sar m ax (V ) 0.6 0.4 Ic im A J V cf. (V ) Im A ) 50 0.2 lk 4.8 50 35 -25-85 PI-264 2 100 4.8 50 35 -25-85 PI-265 100 4.8 50

NIS-501

Abstract: MIS-001 SG211 PI-37 SG-206 SG-214 SG-215 MIS-003D NIS-301 NIS-503D
Contextual Info: ¿£-Id 98-02- 0£ 09 966 OOT 9'0 01 TO oe TO ç 02 92 910 2 9I2-O S ¿ T Id 9¿ —02 — 0Î 09 96'6 OOT 9'0 01 TO 02 TO 9 02 9*£ 9*0 e 9I2-O S 9*0 9*e r iz - O S .T í? Z 91 -Id 98 —02 - 0£ 09 8 *í 001 2'0 oe KO 9 02 9*2 3 'i? I £ T Id 98-02 — 0£

EE-SX1005-P1

Abstract: TLP806 TLP805 TLP802 TLP804 TLP809 PI-254 EE-SX136 TLP507A TLP811
Contextual Info: 325- - ft £ * !J - > i i £ £ m ab n w m T a = 25°C ( r a = 25"C) b~ Eg. 3Ü ;- Nf Tel M IT O I c/ I f I f VCE VCE -sac I f Ic tr Ic Rl VCE I f min { %) imA) (V) max (V ) (mA) (mA) typ ( f i s) imA; iß ) (V) (mA) 1 *= ? i-nc Vc e (mm) 0.2 0.5 20 10

PS4703

Abstract: PI-208 OS-3302 OS-3402 PI-345 PI211 FGT 313 PS4751 PS4009 PS4010
Contextual Info: - % £ tt '7 £ m m PS4009 B % PS4010 * '• ! ■ ■h l i (mm) 4.2 S fil 56b I c/ If min [ % ) I f imA'i 20 10 20 10 jfi 14 % 7 ?- L ; (7 „= 2 5 eC ) '? r w t t ± tr typ (/¿s) S À / E tS n VCE Satl m ax (V ) I f (m A ) 2 1.2 10 0.5 200 2 2 1.2

PI-275

Abstract: PI-245 PI-244 PS-R-50 PI-337 SY102 PI-276 182-1 NJL5801k GP2A11
Contextual Info: — • S í m x - r e f f l u £ i t di te m w i t m. m M. Et V cc m m ) P S -R 1 1 it * í P S -R -5 0 m in ÍV ) m a x (V ) V — u ^ li £ a i ) j 1£ E t VOL m a x (V ) lo i. Im A ) V cc (V ) ü ä uk ffy t r „ = 25"C> m fê Ü. 0¡L le e m a x im A )

SC11328

Abstract: bvv 26 e sc11328cv SC2231
Contextual Info: vV SC11328 Programmable Frequency Synthesizer PFS SIERRA SEMICONDUCTOR SC11328 Programmable Frequency Synthesizer (PFS) 2 4 -P IN D IP PA CK A G E FE A TU R E S □ Internal mask program m able ROM for fixed frequency configuration □ M icroprocessor compatible

EE-SX450-P1

Abstract: EE-SG3MC EE-SX430 EE-SH3M EE-SX330 EE-SH3MC EE-SG3M EE-sx450 EE-sg3 SX450
Contextual Info: 333- - M it r, M Éij V tT Voi X m a x V m '¡4 n - U- -< iiii mai <•- H ' •7 ’ (,= ai aj 25°C' (r„ = 25!C) m. a: In 3 * 7 tfjAJ Sù l<>L Vcc Icc Vcc Vn m (Vi T„f „ 9 t\ - ni im %- W. 'mm' ;m m ; (mA) (Vi m ax imA) (V) 4.6 0.8 4.5 26.4 0.4 t

pj026

Abstract: ph84 RPI-811 ON1531LC-A PI-278 ON1501 ph83 RPI-512 MARK UU1 OS-3705R
Contextual Info: - 334 - n. *J. % tt fi «tai* 'T 7. l / M i V cc OS-3705 B M PS5501HC-1 m in V ) m ax (V ) 0.5 4.5 5.5 0.35 16 0.5 4.5 5.5 0.35 16 5 0.5 4.5 0.4 5 4.5 4.5 PS5501LC-1 0.5 4.5 T ON1531LC-I.A) RPI-811 lo i. (m A Ì V cc (V ) I cc max (mA) m at Fa: (V ) ih ir n tt

351N

Abstract: FBGA-F
Contextual Info: Advance information •■ I l A S7C3256K36Z A S7C3256K32Z I 3.3V 2 5 6 K x 3 2 /3 6 synchronous burst SRAM with ZB T1 Features • • • • • • • • • M ultiple p ackagin g op tion s - Econom ical 100-pin TQFP package - C hip-scale fBGA package for sm allest footprint

bvv 26 e

Contextual Info: 128K x 64/256K x 72 SYNCHRONOUS FLOW THROUGH SRAM 256K x 72 ZBT SRAM MODULE FAMILY FEATURES: PRELIMINARY IDT7MBV4157 IDT7MBV4158 IDT7MBV4159 DESCRIPTION: • Pin compatible module family for synch flow-through SRAM and flow-through zero bus turnaround ZBT™ SRAM

GPIA05

Abstract: PI-161 SY102 GP1A42 DG-203 LG-203 LG-217 LG-403 LG-404 LG-409
Contextual Info: -3 3 2 • a iifiS x - r « gy £ tí. 7, '! - I-Í I £ 14 % u - U ^ ííjf F - M IC Q : V cc vmm LG-203 à i 7' imm'i min iV j m ax ;V ) m ax V ) •fc & it m 0.5 4.5 5.5 0.4 4i 5.5 0.5 & if DG-203 0.5 LG-217 0.5 4.5 5.5 0.4 LG-403 - 4.5 5.5 0.4 I T = 25‘C.!

Contextual Info: A Advance information •■ I l AS7C3512K16Z AS7C3512K18Z 3.3V 512Kx 16/18 synchronous burst SRAM with ZBT' Features • ZZ sleep m ode for lower power • Organization: 5 2 4 ,2 8 8 words x 16 or 18 bits • ZBT architecture for efficient bus operation

ON2160

Abstract: ON2152 PI-234 ON2270 SY102 EE-SH3 ON2153 ON2170 ON2171 MARK UU1
Contextual Info: - 338- « M £ tt £ * *¡£$1 mm ON2152 fò t ss & «6 t# tt ± I f le (mA) tmA) 20 0.6 100 1 8 I f V cb min (% ) (mA) (V) VCE {T,= 255C) ( r a=25*c) / 9 9 - ^ •■ -t. max (V) I c/ I f 4 rv ^ ir typ (pi s) # le (mA) ffif m m % I f 3 1 .? ? i ì - ?Pd1

Contextual Info: fax id: 3546 CY2280-1 CY2280-2 CY2280-3 100-MHz Pentium II Clock Synthesizer/Driver with USB and Power-Down for Mobile or Desktop PCs -3 or at one-half the PCI frequency -2). The full selector guide for all options is shown below. Features • Mixed 2.5V and 3.3V operation

GN1113

Abstract: ON1112 59 SIU-5000 ON1112 ON1114 ON1128 ON1128S RPI-38
Contextual Info: - 328- * S £ 0N1111 tt & T w - r -t , i-te H #3 i£ £ ± I f m A V cE (V ) VCE !sut m ax (V ) I f (m A ) le (m A ) ty p (/is) 6 (mm) (mm) I c / Jf m in ( % ) 5 0.45 1.5 20 10 0.3 50 0.1 0.45 1.5 20 10 0.3 50 0.1 ON1112 1 0.45 1.5 20 10 0.5 50 ON1114

GP2522

Abstract: GP2L20R GP2L20L GP2503 GP2524 NJL5143EL NJL5146EA NJL5147EL NJL5161K NJL5162K
Contextual Info: - 33 6 - « S g ít m g n % à’j î-5 n. ! T „ :-2 5 ’C , X. : \ -7 9 - m : 7', = 25C'i Vr ÎJ.f iir fr faj 'L Vu, I f vmA) !Q ' ¡V ) im A i Y' “Ci - 10k 5 45 25 - 2 0 '7 0 I f Ver. VvF. «t I f le t, II m ax !V ï im A i 1mA) typ (¿¿s1 150

GPIS56

Abstract: gpis51 gpis52 GPIS50 KU107-02 GPIL53 gpil50 GP1S42 KU107-01 GP1S53
Contextual Info: 323- - * 3ü £ tt . T £ mm X II . [•if (mm) Ic iI f m in ( % ) (m A ) 2.67 1.5 GP1S29 0.9 GP1S30 0.9 0.6 6.25 GP1S32 1.6 0.3 1 I f V fL (V ) GP1S42 - - - - GP1 S4 4 S - - - - 0.5 2.5 20 0.5 2.3 20 GP1S51 3 GP1S52 3 il V c,J isai. I f m ax (V ) (m A )

Contextual Info: Advance information •■ Il AS7C3256K36Z AS7C3256K32Z II 3.3V 256Kx32/36 synchronous burst SRAM with ZBT1 Features • • • • • • • • • • M ultiple packaging options - Economical 100-pin TQFP package - Chip-scale fBGA package for smallest footprint

OS-3502

Abstract: OS-3602 OS3502 lm117 3.3V PM47 TLP1024 TLP1025 TLP1029 TLP1034 MARK UU1
Contextual Info: -331 &ÍJ % ffy TLP1023 £ í± m 'T & £ TLP1024 * ;l •/ híS X U •/ ' 3 >v Y / FLU I FHL max ;.mA: max mA: mm! (mm 5 0.5 - 3 0.5 4 ft is (V ) - WÌlir-ìmft H íFí fit *¡ T„„, cc im A ) V cc (V ) m in <V) m ax (V ) t.mA) ro 14 280 5 4.5 17 50

P0038.7

Contextual Info: EL2170C , EL2270C , E L2470C f i l i t t e C 70MHz/lmA Current Mode Feedback Amplifiers HIGH PEftFORMANSE AfiALbS INTEGW E B CIRCUITS Features General Description • Single EL2170C , dual (EL2270C) and quad (EL2470C) topologies • 1mA supply current (per amplifier)