BVTB Search Results

AS7E

Abstract: 16 TFFN OS000034
Contextual Info: A SI? AUSTIN SEMICONDUCTOR. INC. A S 7 E 1 28K 32 128K x 32 E E P R O M EEPROM MODULE PRELIMINARY FEATURES * * * * * * * Access times of 120.150, 200 ns Built in decoupling caps for low noise operation Organized as 128K x32; Operation with single 5 volt supply

DS16F95

Abstract: DS3695 DS36F95 DS96F172 DS96F173 DS96F174 DS96F175 EIA-485 SN75176A BVTB
Contextual Info: DS16F95 DS36F95 EIA-485 EIA-422A Differential Bus Transceiver General Description The DS16F95 DS36F95 Differential Bus Transceiver is a monolithic integrated circuit designed for bidirectional data communication on balanced multipoint bus transmission lines The transceiver meets both EIA-485 and EIA-422A

adc1205

Abstract: adc1225ccd-1
Contextual Info: ADC1205,ADC1225 ADC1205 ADC1225 12-Bit Plus Sign MuP Compatible A/D Converters Literature Number: SNAS537A ADC1205 ADC1225 12-Bit Plus Sign mP Compatible A D Converters General Description Key Specifications The ADC1205 and ADC1225 are CMOS 12-bit plus sign

B1642

Abstract: LMF60CIN-100 LMF60 742 opamp LMF60-100 9294 J14A LMF60CMJ100 LMF60CMJ-100 LMF60CMJ50
Contextual Info: LMF60 High Performance 6th-Order Switched Capacitor Butterworth Lowpass Filter General Description Features The LMF60 is a high performance precision 6th-order Butterworth lowpass active filter It is fabricated using National’s LMCMOS process an improved silicon-gate CMOS process specifically designed for analog products Switchedcapacitor techniques eliminate external component requirements and allow a clock-tunable cutoff frequency The ratio

Fairchild 9960

Abstract: AN-905 AN-912 C1996 EIA-232
Contextual Info: National Semiconductor Application Note 912 John Goldie October 1993 OVERVIEW The scope of this application note is to introduce common data transmission parameters and to provide their definitions This application note is subdivided into five sections which are

Contextual Info: H11AA1 SIEMENS FEATURES • Current Transfer Ratio, 20% Min. • AC or Polarity Insensitive Input • Built-In Reverse Polarity Input Protection • I/O Compatible with Integrated Circuits • Industry Standard DIP Package • Underwriters Lab File #E52744

"pro electron"

Contextual Info: [•o HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS BPW36/BPW37 PACKAGE DIMENSIONS The BPW36/37 are silicon phototransisters m ounted in narrow angle TO-18 packages. 9 A fc < FEATURES SYMBOL A (¿D INCHES MILLIMETERS MIN. MAX. MIN. MAX. .225 .255 5.71

T2D 95

Abstract: es310 CMSJ MARK CODE UA771 652 ITT ap dace sic CC1110x D70f
Contextual Info: NEC USER'S MANUAL V853 32/16-BIT SINGLE-CHIP MICROCONTROLLER PRELIMINARY HARDWARE iiPD703003 /¿PD70F3003 Document No. U10913EJ2V0UM00 (2nd edition) Date Published February 1997 N NEC Corporation 1 996 Printed in Japan • b 4 2 7S 25 DDThTlB =ÎDT ■

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .

3N35

Contextual Info: TYPE 3N35 N-P-N GROWN JUNCTION SILICON TETRODE TRANSISTOR B U LL ET IN NO. DL-S 58961, A UG U ST 1958 Typical 20db Power Gain at 70 MC Hgh Cain at High Temperature Designed for High Frequency • IF Amplifiers RF Amplifiers * Video Amplifier! • Ofcillators

F200A

Contextual Info: \o aucti, 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N718 NPN TRANSISTOR SILICON MECHANICAL DATA CASE: TERMINAL CONNECTIONS: JEDEC TO 18 Lead 1 Emitter Lead 2 Base Lead 3 Collector (Electrically connected to case)

ADC1225

Abstract: ADC1205CCJ-1 ADC1205 ADC1205CCJ ADC1225CCD ADC1225CCD-1 C1995 ZENER DIODES E-1 2 bit magnitude comparator
Contextual Info: ADC1205 ADC1225 12-Bit Plus Sign mP Compatible A D Converters General Description Key Specifications The ADC1205 and ADC1225 are CMOS 12-bit plus sign successive approximation A D converters The 24-pin ADC1205 outputs the 13-bit data result in two 8-bit bytes

pnp array

Abstract: smd transistor db2 current mirrors wilson NPN pnp MATCHED PAIRS array 4 npn transistor ic 14pin 2n3906 equivalent transistor smd transistor b44 ELANTEC 510
Contextual Info: 315^557 0GGE5ÛÛ GST M E L A INC ' T - * l 3 - 'Z - 5 1 F eatu res G eneral D escrip tion • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric m atching and high speed performance. The 350 M H z ft provides A.C. performance

DS75124

Abstract: 8T24 C1996 DS75124N N16A SN75124 0204b1
Contextual Info: DS75124 Triple Line Receiver General Description Features The DS75124 is designed to meet the input output interface specifications for IBM System 360 It has built-in hysteresis on one input on each of the three receivers to provide large noise margin The other inputs on each receiver are in a

Contextual Info: 0 OPTEK Product Bulletin O P550A Jun e 1996 NPN Silicon Phototransistors Types OP550A, QP550B, QP550C, QP550D Features • Wide receiving angle • Variety of sensitivity ranges • Side-looking package for space limited applications Collector-Emitter Voltage. 30 V