BV-1 501 Search Results

WSD501H

Abstract: BV45
Contextual Info: WSD501H * “G” Lead Pb -Free 1 2 SOD-323 WEITRON http://www.weitron.com.tw WSD501H MAXIMUM RATING Characteristics Symbol WSD 501H Unit Breakdown Voltage BV 45 Volts Continuous Reverse Voltage VR 40 Volts Average Rectified Forward Current IO 100 mAmps Peak Forward Surge Current

BV 1 501

Abstract: SNK500-2x12-3 kaschke 096.906 BV 501 kaschke SP-E 16 75KV K2006 Kaschke sp-e 13 4
Contextual Info: Technical Data Sheet Part designation: Customer part no.: Kaschke Göttingen SP-E 13/6 SNK500-2x12-3 d:/bv/zn1864.dwg Customer: EI 3,81 a. 4 5 Uout 12V 7 6 Uout 12V 8 Uin 1 Remarks : AII 8 1 0,6 11,43±0,3 AI AIII EII EIII 10,16±0,3 max.15,1 max.17,5 max.14,3

in4606

Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.

IRF 504

Abstract: EB 203 D DALE PT 30-2 VISHAY MARKING 2U eb 102 vishay EB eb 203 EB 202 D EB marking code marking code EB 38
Contextual Info: IHA Vishay Dale Filter Inductors High Current FEATURES • • • • STANDARD ELECTRICAL SPECIFICATIONS MODEL IHA-101 IHA-102 IHA-103 IHA-104 IHA-105 IHA-201 IHA-202 IHA-203 IHA-204 IHA-205 IHA-301 IHA-302 IHA-303 IHA-304 IHA-305 IHA-501 IHA-502 IHA-503

nec 2401

Abstract: DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60
Contextual Info: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient

400P

Abstract: DE475-501N44A Directed Energy
Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-501N44A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

nec 2401

Abstract: 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04
Contextual Info: Directed Energy, Inc. An DE150-501N04A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR

DE375-501N21A

Abstract: "RF MOSFETs" 400P
Contextual Info: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

DE475-501N44A

Abstract: 400P PIN diode SPICE model
Contextual Info: DE475-501N44A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

DE275-501N16A

Abstract: 92-0002 DE275-501N16
Contextual Info: Directed Energy, Inc. An DE275-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

400P

Abstract: DE375-501N21A mosfet SPICE MODEL
Contextual Info: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-501N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

DE275-501N16A

Abstract: KP58
Contextual Info: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient

DE275X2-501N16A

Contextual Info: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in

200W MOSFET POWER AMP

Abstract: DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model
Contextual Info: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient

DE275X2-501N16A

Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
Contextual Info: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.

DE375-501N21A

Abstract: 400P PIN diode SPICE model
Contextual Info: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

DE275-501N16A

Abstract: 501N16A gsm Handset Circuit Diagram PIN diode SPICE model
Contextual Info: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500

DE475-501N44A

Abstract: 10-15V 400P PIN diode SPICE model
Contextual Info: DE475-501N44A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: ePurge X Solid State Purge Controller Applied Analytics Data Sheet No. DS-501A — Revised 19 June 2013 An ultra-slim, next generation purging & pressurization device. In order to prevent fire or explosion, instrument enclosures are often “purged” of flammable gas. Before cycling power to the

Contextual Info: WSD501H WEITRON http://www.weitron.com.tw WSD501H MAXIMUM RATING Characteristics Symbol WSD 501H Unit Breakdown Voltage BV 45 Volts Continuous Reverse Voltage VR 40 Volts Average Rectified Forward Current IO 100 mAmps Peak Forward Surge Current 8.3ms1/2 Sine Wave

0E12

Abstract: MOSFET Termination Structure
Contextual Info: Low Voltage Super Junction MOSFET Simulation and Experimentation Timothy Henson, Joe Cao International Rectifier 233 Kansas St, El Segundo, CA 90245 USA as presented at ISPSD Conference , April 2003 Abstract. The application of Super Junction concepts to a low voltage power MOSFET is

Contextual Info: MIL-C-5015 Connectors MS-E/F/R/ER Contact Arrangements Face View Pin Insert LEGEND Resilient only Resilient & Plastic ¢ High Volume Layouts - readily available from Cannon Distributors ¢ ¢ ¢ ¢ B A B A D C B Shell Size No. of Contacts Service Rating

CB345

Abstract: MU Thomson-CSF diode CY501H 1N5181 CB-323 Thomson-CSF diodes de redressement Diodes de redressement
Contextual Info: high voltage rectifier diodes diodes de redressem ent h au te tension Types 100 m A •o Vrrm ■f s m 10 ms mA (V) (A) vF max (VI / if THOMSON-CSF ■r /V r r m V(BR)R max (mA) (^à) min (V) 100 100 10 60000 100000 Case / Tgm i) = 25°C Tj = 125°C CY 501 H

CSR 8811

Abstract: HM511001AP6 HM511001 HM511001ajp
Contextual Info: H M 5 1 1 0 0 1 A S e r ie s 1,048,576-Word x 1-Bit CMOS Dynamic RAMI • DESCRIPTION H M 511001A P Series The Hitachi HM511001A series is a CMOS dynamic RAM organized 1,048,576word x 1-bit. HM511001A has realized higher density, higher performance and vari­