BV-1 150 Search Results

transistor A25 SMD

Abstract: rl 254 diode
Contextual Info: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2561-1,-2, PS2561L-1,-2 Features High isolation voltage BV = 5 000 Vr.m.s.: standard products BV = 3 750 Vr.m.s.: VDE0884 approved products Option High collector to emitter voltage (VCEO = 80 V)

BFR39

Abstract: bfr40 BFR80 BFR81 BFR79 BFR41 NPN pnp MATCHED PAIRS BFR61 Bfr60 transistor BFR40
Contextual Info: Silect General P u rp ose T ra n sisto rs — Ic up to 800 m A C a se O u tlin e s Polarity PTOT Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) T IS90 (1) TIS91 (1) Maximum ratings BV BV C BO V CEO V Cont IC A

Contextual Info: LP0701 Çh Supertex inc. Low'Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV / BV “ *DGS D max (min) VGS(th> (max) 1.5£2 -1 ,25A -1.0V DS(ON) -16.5V ^D(OH) Order Number / Package TO-92 SO-8 Dice LP0701N3 LP0701 LG LP0701ND

Contextual Info: LP0701 Supertex inc. Low Threshold P-Channel Enhancement-Mode Lateral MOSFET Ordering Information D DS ON (max) -16.5V 1 . 50 . JÎ BV DSS / BV DGS Order Number / Package V GS(th) -1.25A (max) TO-92 SO-8 Die -1.0V LP0701N3 LP0701LG LP0701ND Features Advanced MOS Technology

Contextual Info: LP0701 1 ni« ThrashnM P-Channel Enhancement-Mode Lateral MOSFET BV DSS / BV DGS D DS ON (max) -16.5V If Ordering Information 1.5Q -1.25A Order Number / Package V GS(th) (max) TO-92 SO-8 Dice -1.0V LP0701N3 LP0701LG LP0701ND WÂ Features Advanced MOS Technology

BA219

Abstract: FDH444 15921 1N628 DO-35 1S920 1N842 1N3070 1N629 1N643
Contextual Info: FAIRCHILD DIODES D IO D ES HIGH VOLTAGE SWITCHING DIODES BY DESCENDING BV GLASS PACKAGE DEVICE NO. BV V Min nA Max 1 1N661 240 10000 200 1.0 6.0 2 FDH400 200 100 150 1.0 200 Item ir VF V Max vr @ V @ If mA C pF Max 20 «rr ns Max Package No. 300 DO-35 50

Contextual Info: LP0701 inc. P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV ° ¥ dgs p Order Number / Package max (min) V GS(th) (max) TO-92 SO-8 □ice 1 .5 ÌÌ -1.25A -1.0V LP0701N3 LP0701LG LP0701ND DS(ON) -16.5V '[>(ON) Features □ Ultra low threshold

TO-202 transistor NPN

Abstract: ECG312 ECG311 ECG299 ECG312 transistor ecg32
Contextual Info: PHILIPS E C G INC 17E D Transistors cont'd EGG Type Description and Application • (=1=53=120 0005033 ê ■ (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV q b o BV c e o

TN25A

Contextual Info: T N 25 A Lji Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV qSS ! ^DS O N ^ G S (th ) ' d <ON) BV dgs (max) (m ax) (min) TO-243AA* 60V 1 .5 0 1.6V 3.0A — TN2506ND 100V 1.5 0 1.6V

3N123

Abstract: TELEDYNE CRYSTALONICS 3N136 VE2B
Contextual Info: « LOW COST SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR GEOMETRY 450, PG. 59 E L E C T R IC A L D A T A ABSOÎ.UTE M AXIM U M RATING PARAMETER SYMBOL 3N123 UNITS Collector to Base Voltage BV cbo 30 V Emitter 1 to Base Voltage BV e ì BO 25 V

SSM4816SM

Contextual Info: SSM4816SM DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE Simple drive requirement MOSFET-1 BV DSS S1/D2 S1/D2 Suitable for DC-DC Converters R DS ON 22mΩ ID MOSFET-2 BV DSS R DS(ON) ID 6.7A 30V 13mΩ 11.5A S1/D2 D1 Fast switching performance SO-8 G2 S2/A S2/A

BA216

Abstract: BA164 1S44 BA217 1N457JAN 1N458JAN 1N459JAN 1N461A BA130 BA218
Contextual Info: FAIRCHILD DIODES DIODES GENERAL PURPOSE DIODES BY DESCENDING BV (Cont’d) GLASS PACKAGE Item DEVICE NO. BV V Min *R nA Max @ vF Vr V V Max If mA @ c trr PF ns Max Max Package No. 1 BA218 50 50 25 1.0 10 5.0 — ' DO-35 2 1S44 50 50 10 1.15 10 6.0 — DO-35

KPS2832

Contextual Info: PRODUCT SPECIFICATION DATE: 01/18/2007 cosmo Photocoupler ELECTRONICS CORPORATION NO. 61P25004 : KPS2832 REV. SHEET 1 OF 6 1 High Isolation Voltage High Collector To Emitter Voltage SSOP Photocoupler • Features 1. High isolation voltage BV =3750 Vrms

ac input ssop photocoupler darlington

Abstract: KPS2806
Contextual Info: PRODUCT SPECIFICATION DATE: 01/18/2007 cosmo Photocoupler ELECTRONICS CORPORATION : KPS2806 NO. 61P35002 REV. SHEET 1 OF 6 1 High Isolation Voltage AC Input, Darlington transistor Type SSOP Photocoupler • Features 1. High isolation voltage BV =3750 Vrms

Contextual Info: Transistors UMT4401 / SST4401 / MMST4401 /2N4401 NPN Medium Power Transistor Switching I UMT4401 /SST4401 /MMST4401 /2N4401 •Features •E xternal dimensions (Units : mm) 1 ) BV ceo< 40V (lc = 1 m A ) 2 ) Complements the UMT4403/SST4403/MMST4403/PN4403

PS2561

Abstract: nec PS2561
Contextual Info: HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS2561-1, -2, -4 PS2561L-1, -2, -4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV 5000 Vr.m.s.: normal specification products PS2561-1, -2 and -4 and PS2561L-1, -2 and -4 are optically

Contextual Info: DATA SHEET NEC's HIGH ISOLATION VOLTAGE SOP MULTI OPTOCOUPLER PS2701-1 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE: BV: 3750 Vr.m.s. NEC's PS2701-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

transistor rf m 1104

Abstract: nec 2501 optocoupler transistor m 1104
Contextual Info: HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP OPTOCOUPLER PS2805-1 PS2805-4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 2500 kVr.m.s. PS2805-1 and PS2805-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon

Contextual Info: LOW INPUT CURRENT HIGH SPEED SWITCHING MULTI PHOTOCOUPLER SERIES PS2503-1, -2, -4 PS2503L-1, -2, -4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5000 Vr.m.s. PS2503-1, -2, -4 and PS2503L-1, -2, -4 series are optically coupled isolators containing a GaAs light emitting diode and

transistor A25 SMD

Abstract: smd transistor H-R
Contextual Info: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2501-1,-2,-4, PS2501L-1,-2,-4 Features High isolation voltage BV = 5 000 Vr.m.s. High collector to emitter voltage (VCEO = 80 V) High-speed switching (tr = 3

PS2702-1-E3

Abstract: PS2702-1-F3 PS2705-1 PS2705-1-E3 PS2705-1-E4 PS2705-1-F3 PS2705-1-F4 PS2705
Contextual Info: HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP MULTI PHOTOCOUPLER PS2705-1 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV:3.75 k Vr.m.s. MIN PS2705-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The

Contextual Info: HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES PS2501-1,-2,-4 PS2501L-1,-2,-4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5kVr.m.s. MIN PS2501-1, -2, -4 and PS2501L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN

PSA56

Contextual Info: TOSHIBA MPSA55,56 Transistor Silicon PNP Epitaxial Type Designed For Use as Medium-Power Driver and Low-Power Outputs Features • High Collector-Emitter Breakdown Voltage - BV c b o = -60Vdc Min. @ lc =-1 .OmAdc M PSA55 -80Vdc (Min.) @ lc = 1 .OmAdc M PSA56

BV-N542RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-N542RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.