BV 748 Search Results

BV-M541RD

Abstract: BV-M542RD BV-M543RD BV-M544RD BV-M545RD BV-M545RE BV-M546RD BV-M54DRD BV-M321RD BV-M325RD
Contextual Info: SINCE 1981 Part No. Digit Size 0.56" Five-Digit 0.36" Six-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BV-M541RD BV-M545RD BV-M545RE BV-M542RD BV-M543RD BV-N541RD BV-N545RD BV-N545RE BV-N542RD BV-N543RD BV-M544RD BV-N544RD BV-M546RD BV-M54DRD

bv 748

Abstract: BV-M541RD BV-M542RD BV-M543RD BV-M544RD BV-M545RD BV-M545RE BV-M546RD BV-M54DRD BV-M321RD
Contextual Info: Part No. Digit Size 0.56" Five-Digit 0.36" Six-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BV-M541RD BV-M545RD BV-M545RE BV-M542RD BV-M543RD BV-N541RD BV-N545RD BV-N545RE BV-N542RD BV-N543RD BV-M544RD BV-N544RD BV-M546RD BV-M54DRD BV-M321RD

VD-03

Abstract: BV-A501RD BV-A502RD BV-A503RD BV-A504RD BV-A505RD BV-A505RE BV-A506RD BV-A50DRD BV-M501RD
Contextual Info: Part No. Digit Size 0.50" Five-Digit Absolute Maximum Ratings Electro-optical Data At 10mA Drawing Peak Vf Iv. Typ. No. Wave (v) Pd If Ifp Per.Seg. Length (nm) (mw) (mA) (mA) (mcd) Typ. Max. p(nm) Chip Common Anode Common Cathode BV-A501RD BV-A505RD BV-A505RE

C495 transistor

Abstract: transistor c495 C735 c495 bc300 equivalent NPN C460 BFY50 equivalent u c756 2n-2411 2n1613 equivalent
Contextual Info: 7 Metal Can High Current NPN Am plifiers Case Outlines Maximum ratinas Device Type ¡5 o £L BV Case BV BV hFEI CBO CEO EBO ICM mA V V V hFE2 1C Ic mA min. max. mA BFT39 BFT40 BFT41 NPN NPN NPN T039 T039 T039 90 70 60 80 60 50 5 5 5 1000 1000 1000 100 50 100 75

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

NTE153

Abstract: Nte 157 NTE123AP nte129 NTE159M nte123
Contextual Info: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BV ceo BV ebo &FE T018 28a •c 0.8 BVcbo Amp, Audio to VHF Freq.,

C495 transistor

Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

NTE2360

Contextual Info: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10

bv 748

Abstract: BV-A501RD BV-A502RD BV-A503RD BV-A504RD BV-A505RD BV-A505RE BV-A506RD BV-A50DRD BV-M501RD
Contextual Info: SINCE 1981 Part No. Digit Size 0.50" Five-Digit Absolute Maximum Ratings Electro-optical Data At 10mA Drawing Peak Vf Iv. Typ. No. Wave (v) Pd If Ifp Per.Seg. Length (nm) (mw) (mA) (mA) (mcd) Typ. Max. p(nm) Chip Common Anode Common Cathode BV-A501RD BV-A505RD

BV-N542RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-N542RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-N542RF SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BV-N546RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-N546RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BV-N546RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-N546RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BV-N544RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-N544RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BV-M544RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BV-M544RD SINCE 1981 ● Features : 1. 0.56 inch 14.10mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

t0218

Abstract: 200 watts audio amp power transistors NTE377 NTE374 NTE373 NTE374 NTE382 NTE392 45W AMP NTE373 25w audio
Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) typical <T Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BV ebo Ufe Pd

Contextual Info: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application Case Style Dlag. No. Voltage Gate to Source Min (Volta) Cutoff Voltage Gate to Source Max(OFF) (Volta) BV q s s Drain Current Zero-Gate Min-Max (mA) Drain Current

Contextual Info: POWER MOS FIELD EFFECT TRANSISTORS Dlag. Number BV dss Vgs Off BVGSS •d rosi0 ») C |S S gfs Pd N-CHANNEL Enhancement Mode High Speed Switch T03 1f 100 Min 4 Max ±20 Max 33 0.08 Max 3000 Max 9 Min 150 Max N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL

NTE130

Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)

L0727

Abstract: A109 HDP-22
Contextual Info: THIS O R A W I N C IT 'WP1J9L '5 H E D . BV COPYRIGHT f P AMP I NCOPPORATED. LOC , 19 | RE LE AS ED FOR PUBL fCAT ION 015 T BD ALL INTERNATIONAL PIÔHTS RESERVED. REVISIONS 39 p P ZONE LTR <3 V DATE DE3CRJPTJ0N REL WAS 3 7 —4 8 7 0 - 16 0 -

il7107

Abstract: bd504
Contextual Info: D R A W I N G MADE THIS D R A W I N G @ IN THIRD ANGLE IS UNPU&LISHEO. J PROJECTION , T9 R E L E A S E D FOR P U d L l C A T l O N BV CÛPVRJÔHT 1 » AM P fNCOW>Ci*ATEO. ACl. MOD rsz— 2 BD INTERNATIONAL RÏ GHTS » E S £R V £ 0 . O f ST 39 Rt v;s;CNi

Contextual Info: SC-.1.5 UNCONTROLLED DOCUMENT FRONT SIDE PART NUMBER S S P -E X 118MB630 PRELIMINARY IN P /N DIR BACK REV. 22.65 [0.892] O O O b ö b 118,25 C4.656] o o o cD cD cD ÇD cD cD cD cD cD cr D O : O : °0 •O ■O ■O : » : : : : : : I I 8,97 C0.353: 19.00 CO.748]

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

Contextual Info: ALA400/401 LINEAR ARRAY Description The ALA400/401 Linear Array Family is fabricated using the complementary bipolar integrated circuit CBIC process that offers the advantages of vertical NPN and vertical PNP transistors. CBIC technology offers the advantage of