BUZ 80A Search Results

BUP 312

Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Contextual Info: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B

buz80

Abstract: TR 308 OF
Contextual Info: SIEMENS BUZ 80 BU Z8 0A SIPMOS Power MOS Transistors BUZ 307 BU Z308 VDS = 800 V /q = 2.6 . 3.0 A ^DS on = 3.0 . 4.0 Q • N channel • Enhancement mode • Packages: TO-220AB TO-218AA (TOP-3) ') Type Ordering code BUZ 80 C67078-A1309-A2 BUZ 80 A C67078-A1309-A3

buz 350 equivalent

Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Contextual Info: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11

siemens igbt BSM 25GD 100D

Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
Contextual Info: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11

New Jersey Semiconductor

Contextual Info: , One. U TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 BUZ 80A FAX: (973) 376-8960 Type YDS ID ^DS(on) Package BUZ 80A 800V 3A 30 TO-220 AB Maximum Ratings Parameter Symbol Drain source voltage VDS Drain-gate voltage

Contextual Info: SIEMENS BUZ 80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b RDS on Package Ordering Code 3A 3£2 TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vbs Drain-gate voltage ^DGR Rq s Values

transistor vds rds 12 id 80a to220

Abstract: BUZ 80A A1309 BUZ 840 C67078-A1309-A3
Contextual Info: BUZ 80A SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 80A 800 V 3A 3Ω TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage

BUZ80A

Contextual Info: SIEMENS BUZ80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b 3A ^DSion Package Ordering Code 3Q TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vds v DGR Drain-gate voltage Rgs = 20 ki2

leistungstransistoren

Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Contextual Info: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m

BUZ332A

Abstract: BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345
Contextual Info: Typenübersicht Selection Guide SIEM ENS SIPMOS Power Transistors N Channel Power Transistors s > 7 X s TO-220 AB ^D S ^ D S o n V Q 50 50 50 50 50 50 50 50 50 18m 28m 30m 35m 40m 55m 70m 0.1 0.12 60 60 60 60 60 18m 40m 70m 0.10 0.15 100 100 100 100 100

buz 342 G

Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
Contextual Info: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m

BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

relais datenbuch siemens

Abstract: siemens datenbuch triac zu 103 ma BSS97 diode sg 5 ts Scans-048 BUZ23 s489 DSAGER00059 Transistor Datenbuch
Contextual Info: SIEMENS SIPMOS Kleinsignaltransistoren Technische Beschreibung Ausgabe September 1986 Inh alt 1. Einleitung 5 2. Technologie 5 3. Schaltverhalten 6 4. D atenblattangaben 8 4.1 4.2 4.3 Drainstrom lD Gate-Schwellenspannung VGS th Temperaturabhängigkeit 8 8

MOS FET BUZ 444

Abstract: 75516GF FPI 3I TI P1230 PD75516 nec 75x PD75P516GF KCY37 EVAKIT-75X
Contextual Info: , NEC i ^ T ? — / \ f 7 • 5 / — S h m o s M O S In teg rated C ir c u it i PD75P516 //PD75P516 it, ¿ ¿ P D 7 5 5 1 R O M £ 9 > • ¿¿PD75P516 J, =L— tf'ic x %7°n 7 ^ A PROM i t z l t EPROM T # ® ^ / z ® nanT"To v * 5 rA P ^ f$ < 7 K fF ffl i

in4744

Abstract: Ferroxcube 3C8 PQ-4040 byv 32 diode ferroxcube core 3c8 BYW 64 bridge rectifier 768XT188 PQ4040 EC52-3C8 Diode BYW 95B
Contextual Info: CS3842A Single CS3842A Provides Control for 500W/200kHz Current-Mode Power Supply in the circuit Figure 1 . The advantages of current mode control are: Introduction With the introduction of the CS3842A PWM IC, currentmode is possible for power supplies of a wide range of

IN4744

Abstract: EC52-3C8 core ferroxcube 768XT188-3E2A BYW 64 bridge rectifier Ferroxcube 846XT250-3C8 CS-3842A application dc to ac instant power supply ckt diagram 500w Full bridge transformer diode BYW 64
Contextual Info: CS-3842A Single CS-3842A Provides Control for 500W/200kHz Current-Mode Power Supply in the circuit Figure 1 . The advantages of current mode control are: Introduction With the introduction of the CS-3842A PWM IC, currentmode is possible for power supplies of a wide range of

d78044

Abstract: NEC 78F
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD78F0034Y 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The /¿PD78F0034Y is a product of the /XPD780034Y S u b se ries in the 78K/0 S eries and equivalent to the /¿PD780034Y with a flash m em ory in place of internal ROM.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT //¿PD78011H, 78012H, 78013H, 78014H 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ¿xPD78011H, 78012H, 78013H, and 78014H are the products in the ¿/PD78014H subseries within the 78K/0 series. Compared with the older /¿PD78018F subseries, this subseries reduces the EMI Electro Magnetic Interface noise

lc877b80a

Abstract: S4 78A S6 78A lc877b64a LC877B00
Contextual Info: CMOS IC LC877B00A 8-Bit Single Chip Microcontroller Under-Development LC877BC8A 8 bit Single Chip Microcontroller incorporating 128KB flash memory and 4096 byte RAM on chip LC877BB2A 8 bit Single Chip Microcontroller incorporating 112KB flash memory and 4096 byte RAM on chip

ESM 740

Abstract: U601 zkr 118 buz 90 af ESM 831 TP05 uPD78F0547DA PH 8916 40Bh uPD78F0547D
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: HI b427S2S 0042010 1GB B N E C E . |\|E C NEC Electronics Inc. A/PD78014 Family |tfPD78011 B/012B/013/014/P014 8 ' Bit»K-Series Microcontrollers General Purpose With A/D Converter September 1993 Description The/¿PD78011B, /JPD78012B, /L/PD78013, //PD78014, and

d78016

Abstract: nec 78016fgc
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ uPD78011F, 78012F, 78013F, 78014F, 78015F, 78016F 8-BIT SINGLE-CHIP MICROCONTROLLER D E S C R IP T IO N T h e p P D 7 8 0 1 1 F , 7 8 0 1 2 F , 7 8 0 1 3 F , 7 8 0 1 4 F , 7 8 0 1 5 F , a n d 7 8 0 1 6 F a re th e p ro d u c ts in th e /¿ P D 7 8 0 1 8 F s u b s e rie s w ith in

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ¿¡PD78P018F is a member of the ¿¡PD78018F Subseries within the 78K/0 Series. The internal mask ROM of the ¿¡PD78018F is replaced with one-time PROM or EPROM. Because the ¿¡PD78P018F can be programmed by users, it is suited for applications involving the evaluation of