BUZ 341 Search Results

BUP 312

Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Contextual Info: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B

buz 350 equivalent

Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Contextual Info: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11

siemens igbt BSM 25GD 100D

Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
Contextual Info: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11

23 LM CT05

Abstract: buz341 MS3456W32-17PW L/Q2N5550
Contextual Info: SIEMENS BUZ 341 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 341 200 V 33 A fbsion 0.07 n Package Ordering Code TO-218AA C67078-S3128-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit

buz341

Contextual Info: BUZ 341 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS on Package Pb-free BUZ 341 200 V 33 A 0.07 Ω PG-TO-218 AA Yes S Maximum Ratings Parameter Symbol Continuous drain current ID

C67078-S3128-A2

Abstract: buz341
Contextual Info: BUZ 341 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 341 200 V 33 A 0.07 Ω TO-218 AA C67078-S3128-A2 Maximum Ratings Parameter Symbol Continuous drain current

buz 350 equivalent

Abstract: C67078-S3128-A2 transistor buz 350 BUZ 341 buz341
Contextual Info: BUZ 341 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 341 200 V 33 A 0.07 Ω TO-218 AA C67078-S3128-A2 Maximum Ratings Parameter Symbol Continuous drain current

buz341

Contextual Info: SIEMENS SIPMOS Power Transistor • • • BUZ 341 N channel Enhancem ent mode Avalanche-rated Type ^ US Id ^ D S o n Package 1> O rdering Code BUZ 341 200 V 33 A 0.07 Q TO-218 AA C67078-S3128-A2 Maxim um Ratings Symbol Parameter Values Continuous drain current, Tc = 28 "C

Contextual Info: BUZ 341 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated ' fé VPT0ÌI56 3 Pin 1 Pin 3 Pin 2 G S D Type Vds b flDS on Package Ordering Code BUZ 341 200 V 33 A 0.07 n TO-218AA C67078-S3128-A2 Maximum Ratings

BUP 312

Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Contextual Info: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186

HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Contextual Info: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED

IR4060

Abstract: BUZ50 C67078-A1307-A4
Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vbs to BUZ 50 B 1000 V 2A flbston 8 Í2 Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage ''DGR

transistor BD 263

Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vds BUZ 50 B 1000 V 2A flbsion Package Ordering Code 8 Í2 TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage Vds Drain-gate voltage ^DGR Rqs = 20 k£2

Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 50 B Vbs 1000 V b 2A ^BS on 8ß Package Ordering Code TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage ^DS Drain-gate voltage '' dgr Rq s = 20 ki2

Contextual Info: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode Avalanche-rated Type ^D S JD ^ D S on BUZ 70 60 V 12 A 0.15 U Maxim um Ratings Parameter Continuous drain current, Tc = 33 “C Pulsed drain current, Tc = 25 C Avalanche current, limited by 7'jma<

BUZ 338

Contextual Info: Standard Power MOSFETs BUZ 73 A File Number 2263 N-Channel Enhancement-Mode Power Field-Effect Transistors 5.8 A, 200 V TDSIoni = 0.6 O N-CHANNEL ENHANCEMENT MODE D Features: • SOA is p ow er-dissipation lim ited m N anosecond s w itching speeds m Linear transfer characteristics

Contextual Info: SEMELAB LT » 37E D 6133107 DD002fc,3 1 • SEMELAB 'S /K g ^ ^ BUZ 60 MOS POWER MECHANICAL DATA IM-Channel Enhancement M ode Dimensions in mm r lU . . 10.3 j m moa x . 2.8 S _ U î P ¿.5mt 1.3 *|3.6f+- 31 5 .9 min -TT 15.8 max. APPLICATIONS L |.; • MOTOR CONTROL

Contextual Info: SENELAB LT» 37E D 0133107 DDOOSbS S • SMLB ' SE1V9ELAB • * 5 y V ‘ > BUZ 63 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm -M I * - 1 .6 39.5 1 1 APPLICATIONS i • MOTOR CONTROL 20.3 16.9 i -H • SMPS 9.0 12.0 PIN 1 -G a te

so344

Contextual Info: ÛÛD D • fl235b05 Q ü m b 3 0 7 « S I E G 88D 14630 D 7 ”V ' 3 ^ " 7 3 BUZ 48 A SIEMENS AKTIENGESELLSCHAF_ Main ratings N-Channel Draln-source voltage VD3 ■ 500 V Continuous drain current /„ = 6,8 A Draln-source on-resistance f l Ds on> = 0,8 Q

BUZ76

Contextual Info: SEMELAB LT» 37E » 0133167 G000275 fl « S M L B SEMELAB ju:; £ s «6? » BUZ 76 MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm _ 1 0 .3 _ ma». ¿.5ma* 1.3 2.8 5 .9 t i 15.8 Ä min. APPLICATIONS >.i 10 mo* I • SWITCHING REGULATORS

Contextual Info: SEMELAB 37E LT» D Ö1331Ö7 0DDDES1 0 7'T ^ SEMELAB •Jü'i 2 g m icq ?’ m â - BUZ 36 MOS POWER M ECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • DC/DC CONVERTERS • ROBOTS MOTOR CONTROL • STEPPER MOTORS PIN 1-G a le PIN 2-S o u rce

Contextual Info: SEUELAB LTD 3 7E D 0133107 0 DG0B71 □ ISMLB T-39-11 SEMELAB n •S//AS ^ BUZ 72A o 7 Woo MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm _10.3_ max. -»|3.6|» 1.3 ¿.5ma«. T¥ 5.9' i. . 2. 8 min. Ì 15>.l.8 APPLICATIONS 10 max. ■4. J

Contextual Info: ÔÔD » • fl23SbOS 0 0 1 M S 2 2 _ 4 * SIEG SIEMENS A K T IENG ES EL LS CH AF r ~ 3 f~ '/ Main ratings BUZ 25 N-Channel = 100 V Draln-source voltage l'os =» 19 A Continuous drain current h Draln-source on-resistance ^DS on a 0,1 a Description SIPMOS, N-channel, enhancement mode

4900 SIEMENS

Abstract: buz48a 30VN C67078-A1605-A3 buz48
Contextual Info: ÖÖD 1> m fl23SbOS Q G m b 3 0 7 « S I E G 88D 14630 D 7 ’V 3 ^ ”/ 3 BUZ 48 A SIEMENS AKTIENGESELLSCHAF_ Main ratings N-Channel Draln-source voltage l^DS Continuous drain current Id Draln-source on-resistance ^DS on 500 V 6,8 A 0,8 n Description SIPMOS, N-channal, enhancement mode