BUX48A DATA Search Results

BUX48

Abstract: TRANSISTOR BIPOLAR 400V 20A 10a 400v bipolar transistor BUX48A
Contextual Info: BUX48 High Power Bipolar Transistor High Voltage Switching Features: • Collector-Emitter sustaining voltageVCEO sus = 400V (Minimum) - BUX48 = 450V (Minimum) - BUX48A. • Collector-Emitter saturation voltageVCE(sat) = 1.5V (Maximum) at IC = 10A for BUX48

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

Contextual Info: BUX48A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX 84 circuits

Abstract: BUX48 BUX48A application transistor BUX 48 1N4934 2N3763 2N6339 2N6438 BUX48A MM3735
Contextual Info: ON Semiconductort BUX48 BUX48A SWITCHMODEt II Series NPN Silicon Power Transistors The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated

transistor 3405 motorola

Abstract: bux48a equivalent bux48 equivalent transistor 3405 npn
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850-1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed (or high-voltage, high-speed,

BUX48A

Contextual Info: BUX48A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX48A

Abstract: BUX48 BUX48 ST ST IC date code marking JESD97 transistor bux48 bux48a st
Contextual Info: BUX48 BUX48A High voltage fast-switching NPN power transistors Features • NPN transistors ■ High voltage capability ■ High current capability ■ Fast switching speed 1 Applications 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power

Contextual Info: II N AMER P H IL IP S /D IS C R E T E 5SE D bb53T31 a o n o b i s BUX48 BUX48A T - 3 3 - ls ^ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: BUX48 BUX48A High voltage fast-switching NPN power transistors Features • NPN transistors ■ High voltage capability ■ High current capability ■ Fast switching speed s ct u d o 1 Applications 2 ■ Switching mode power supplies ■ Flyback and forward single transistor low power

transistor bux 48a

Abstract: BUX48A application 1N4934 2N3763 2N6339 2N6438 BUX48 BUX48A MM3735 MR854
Contextual Info: MOTOROLA Order this document by BUX48/D SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

transistor BUX 48

Abstract: 1N4934 2N3763 2N6339 2N6438 BUX48 BUX48A MM3735 MR854 transistor bux 48a
Contextual Info: MOTOROLA Order this document by BUX48/D SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

BUV48FI

Abstract: bux48a equivalent buv48 equivalent SGS V48A BUV48A bux48 equivalent SGS V48A WITH CIRCUIT DIAGRAM BUX48A application buv48fi-bux48a BUV48F
Contextual Info: 7^2=1 237 D 0 2 û el ‘ï l 3 • S G S -T H O M S O N ¡ L U ' « ! "T-33>~1 5 BUX48/V48/V48FI BUX48A/V48A/V48AFI S G S-THOMSON 30E ]> HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUX48/A, BUV48/A, and BUV48FI/AFI are multiepitaxial mesa NPN transistors mounted res­

MJ3001 equivalent

Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc

motorola MJ15001

Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —

2SC105

Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp

All similar transistor 2sa715

Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc

BU108

Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:

2SA1046

Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.

mje15033 replacement

Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

BU108

Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —

MJ15023 EQUIVALENT

Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —

mje15033 replacement

Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver

Circuit details of BD237 equivalent

Abstract: BD237-10 BD237 similar BU108 bd237 equivalent 2SC7 bd237 pin assignment 2SD424 2SC495 BUX98A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD237 Plastic Medium Power Silicon NPN Transistor 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

bd135 TRANSISTOR REPLACEMENT GUIDE

Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc