BUX 34 Search Results

Contextual Info: BUX48 SWITCHMODEt II Series NPN Silicon Power Transistors The BUX 48/BUX 48A transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line−operated SWITCHMODE applications such as:

mj 13007

Abstract: mj 13005 13005 A mj 13009 13005a 13009 13007 13005 13005 2 MJE13005A
Contextual Info: pxfl f\ second source devices produits seconde source BUX BUX MJE MJE MJE MJE MJE M JE MJE MJE MJE Type v CEO V VCEX (V) 84 85 13004 13005 13005 A 13006 13007 13007 A 13008 13009 13009 A 400 450 300 400 400 300 400 400 300 400 400 800 1000 600 700 850 600

MO-161

Contextual Info: MECHANICAL DATA MPDI024 – DECEMBER 1997 BUX R-PDIM-N168 DUAL IN-LINE MEMORY MODULE 5.255 (133,48) 5.245 (133,22) Notch 0.157 (4,00) x 0.122 (3,10) Deep 2 Places 0.039 (1,00) TYP 0.125 (3,18) (Note D) 0.054 (1,37) 0.046 (1,17) Notch 0.079 (2,00) x 0.122 (3,10) Deep

Contextual Info: N A HER PHILIPS/DISCRETE b lE bbS3131 0027bl7 TM1 BUX/b BCX79 I> l P-N-P SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in a plastic TO-92 envelope. N-P-N complementary types are BCX58 and BCX59. QUICK REFERENCE DATA BCX78

TRANSISTOR BDX

Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
Contextual Info: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T

CI 13007

Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
Contextual Info: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA

BUV 471

Abstract: BUV 481 BUV-481 CI 13007 BUX 115 MJE-13007 MJE13005A BUV46 MJE13007 BUV-471
Contextual Info: F=Z SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MO K IlLI g¥lSήi!l©i POWER BIPOLAR 700 / 1000 V VCBO RANGE •c (A 2 2 4 4 4 4 5 5 5 5 5 5 5 5 6 6 7 8 8 8 9 9 9 9 9 9 9 9 12 12 12 15 15 15 15 15 15 15 15 15 16 16 16 16 24 24 30 32 32 35 vCBO (V)

bux c

Abstract: BUX 11a transistor BUX 48 BUW34 BUS11A BUW46
Contextual Info: IßSAGrlBB POWER TRANSISTORS Type VCBO V VcEO (V) b (A) Ptot VcEsat (W) (V) tf at •e (us) (A) Case JEOEC ^ * *> 850 1000 500 800 900 400 450 400 400 450 5,0 5.0 10 10 10 100 100 125 125 125 <1.5 <1.5 <1.5 <1.5 <1.5 <0.8 <0.8 <0.8 <0.8 <0.8 3.0 2.5 5.0

BC 641

Abstract: bc 207 npn BC190 bu 1011 ET 3005 h21e BU 208 BC140 BC190B bc107
Contextual Info: Silicon N PN transistors, general purpose continued Tam b = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76

Contextual Info: THOMSON MIL E T SPATIAUX SSE D • TD2bö7B ODOGHTO ÔTT ■ T H C M ' T ' - j y * f DISCRETE COMPONENTS DESCRIPTION PRODUCT PACKAGE o o ■ti» o .E o “O •*> SÖ <Ö BIPOLAR POWER TRANSISTORS BUT 90 V C E O = 125 V 1C = 5 0 A ■ BUT 91 V C E O (s u s ) = 2 0 0 V

BUV93

Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003
Contextual Info: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated

PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING A

Abstract: BUX53
Contextual Info: Power transistors • NPN « Epitaxial Planar » Am plifier and switching NP N « Planar E p itaxte » A m p lific a tio n e t co m m u ta tio n Type Case Boitier *tot W * V CEx 'c VCEO (V) (A) h21E m in max 'c (A) VCEsat / ' C (V) / (A /l('AB) fT (MHz)

BUD48

Abstract: BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW38 BUW52 bux348 TR MJE 350
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL M0 glJ3 ILdOT©[ l(SS POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)

BDX 241

Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

BF872S

Abstract: transistors bf 423
Contextual Info: TELEFUNKEN ELECTRONIC T> Ö1C X ' 2 3~&l ò 'ìaotn b DDQSbMS 5 H A L 6 6 Video and Auto Ignition Transistors Video Transistors and Auto Ignition Transistors fill in the application gaps between the high voltage, high speed, low gain switches and the more conventional low voltage, high

tt 2194

Abstract: LTLS 2n3054 2N5415 2N2243 aa2n BUX54 2N2192 2N2195 2N5416
Contextual Info: metal power transistors O transistors de puissance métalliques Type v CEO •c h21E P to t ! Ic THOMSON-CSF VCE sat 11 / Ib td + tr NPN min PNP (V) (A) max m ax (Al (W) (V) (A) (A) tf ty p * max m ax m ax min M> (us) ip *) (M H z) s w itc llin g tran sisto rs

transistors bu 407

Abstract: Transistors BD 330 bdx 330
Contextual Info: TEXAS IN S T R -COPTO} ^2 DE | f l cltI17Bt. 003titi3S 62C 3 6 6 3 5 ÔÔ61726 TEXAS INSTR OPTO BU406, BU407 N-P-N SILICON POWER TRANSISTORS -T - 2 3 - U O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 • 60 W a t 2 5 °C Case Temperature •

2N2243

Abstract: H21E 2N3439 pnp case to-39
Contextual Info: CB 7 (CB 6) S ilicon N P N transistors, general purpose T g m b -2 5 T ra n s is to rs N P N s ilic iu m , usage g én é ra ! v CEO (V) Case h 2 iE fT (MHz} *s (ns) •c v CEsat (V) <mA) max 60 150 1,5 150/15 40 61 120 150 1,5 150/15 50 61 20 60 150 5 150/15

RCA 40250 transistor

Abstract: audio amplifier with rca 410 Transistor rca 40250 RCA 40622 transistor RCA H 410 2n3772 complement RCA 40250 2n3441 complement RCA 2N3055 transistor 40629 Transistor
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

D895

Abstract: BD 895 bdw 34 a
Contextual Info: b5 TEXAS INSTR -COPTO* DeT | ST b lT H b DDBbS^'ì 62C 3 6 5 9 9 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 • 70 W a t 2 5 °C Case Temperature • 8 A Continuous Collector Current

RCA transistor 40410

Abstract: RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410
Contextual Info: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V

RCA 40313

Abstract: RCA 528 2n3773 rca 40349 RCA 40349 2N3441 RCA 2N3442 40328 BUX 115 RCA 40250
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. lc • 8 0 A m a x . P t - 3 0 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax.

RCA 40874

Abstract: 2N6175 2N3055 specification 2N6179 2N6474 JAN 2n3055 pnp transistor 2N6175 rca 2n1485 2N5296 RCA rca Transistors 4a 322
Contextual Info: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. P y “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. jTO-39»* lc > - 1 A max. P y - 10 W max. (TO-39 * 4 2 x4 2 4 2 x4 2

RCA 40250

Abstract: RCA 40250 transistor 2N3055 ST rca 2n6254 Transistor 40347 transistor RCA 528 st bux RCA 528 40250 RCA 2N6259 RCA
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.