BUV 12 Search Results

transistor ESM 3004

Abstract: ESM3004 ESM 3004 2060T transistor ESM 2060T transistor WLM transistor ESM 30 transistor ESM 3001 ESM 3005 npn 1000V 100a
Contextual Info: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide

transistor buv 90

Abstract: transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C
Contextual Info: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide

buv 40 a

Abstract: BUV56 BUW90 BUW89 BUW52 BUV36A BUV 12 BUV56a BUW50 BUV46
Contextual Info: n>j new fost switching transistors ^ ^^ n o u v e a u x transistors de com m u ta tio n rapide t h o m s o n -c s f SUPERSWITCH 2 ^^X^CEOtsus 90 V 125 V 200 V 250 V XVcEV 'C sat)* 160 V 250 V 300 V 350 V 50 A Case BUV 60 24 A BUV 61 20 A BUV 50 16 A BUV 62

buw48

Abstract: BUW52 BUW89 BUV24 BUW91 buw38 BUV51 BUV 20 buv28a buv 89
Contextual Info: LöSAGrlBB POWER TRANSISTORS Transistors for switching with high operating frequencies at middle voltage stress Type VCBO V VcEO (V) •c (A) Ptot (W) VcEsat 00 tf at (HS) •c (A) Case JEDEC TO-3 BUV 20 BUV 21 BUV 22 160 250 300 125 200 250 50 40 40 250

buv48

Abstract: BC 171 NPN transistor transistor buv transistor bc 237c BUV 76 BUV48I transistor BUV 92
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fl^SOEHb DOG^SSB BUV 48 • BUV 48 A ■¡nULKPHÄIN electronic CrwtN*Tfcchootog* Silicon NPN Power Transistors Applications: Switching mode power supply, inverters, motor control and relay driver Features; • In triple diffusiion technique

transistor BF 164

Abstract: buv 47 i L61A
Contextual Info: «I TELEFUNKEN ELECTRONIC 17E D WÊ Ô^SOO^fc. QDQTSM? 3 BUV 47 • BUV 47 A m iitPW K iN l electronic CrM lfW Tschnotog*«* T - 3 V 13 Silicon NPN Power Transistors Applications: Switching mods power supply, inverters, motor control and relay driver Features:

DL802

Contextual Info: Conventional Rectifier Power Transformers • Chassis Mount BUv direct Signal’s Rectifier Power transformers provide a wide variety of outputs. This series of conservatively designed transformers are manufactured using traditional materials and layer wound techniques.

B45A

Abstract: AEG motor buv 71 aeg d 188 aeg d 188 s 1000 aeg t 188
Contextual Info: A E G CORP □02142^ QDCH571 4 17E D BUV 71 TIlI3J^FE£&sSI30 e le c tro n ic Crearve Technologies •p -*V J 3 Silicon NPN Power Transistors Applications: Motor controls, switching mode power supplies Features: • Implantation High reverse voltage • Triple diffusion

BUV48T

Abstract: transistor WW 179 c10A TRANSISTOR transistor bf 179 TCA 321 12A3 D-07 T0126 SOT-23 marking p03 marking va transistors
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fi'iSOO'îh QDD^SST BUV 48 T miiFMIMIM electronic Creative'ftchnotog*» Silicon NPN Power Transistors Tr *’ 3 3 " i 5 Applications: Switching mode power supply, inverters, motor control and relay driver Features: • In triple diffusion technique

aeg tt 18 n 1200

Abstract: AEG motor aeg tt 18 n 800
Contextual Info: A E G CORP 17E D □ O a T MS b OQDTSbS T BUV 70 ^LBSMKiSSSS electronic CreaUve Tecfcrw*og'es T - 33-13 Silicon NPN Power Transistors Applications: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage A -I • Triple diffusion

Contextual Info: S E M E LA B LTD 37E D • Û1331Û7 SEMELÂB JU L 0 6 1988 BUV 62 NPN MULTI-EPITAXIAL POWER TRANSISTO R Suitable for high energy applications requiring efficient fast switching devices M ECH AN ICA L DATA Dimensions in mm FEATURES I«-1-6 • L O W V CE{SAT

Contextual Info: 0133107 GOOQl'lQ 0 • SMLB 37E D SEMELAB LTD JU L 0 6 1988 SEM ELAB BUV 62A NPN MULTI-EPITAXIAL POWER TRANSISTOR S u it a b le fo r h ig h e n e rg y a p p lic a tio n s re q u irin g e ffic ie n tfa st s w itc h in g d e v ic e s M E C H A N IC A L D A T A

jk21

Abstract: B H08 9m29 N2828
Contextual Info:  0 0  0 0123456789 9 66 6 *+18,*-8* +646.*48-.88 !"#$%&%' ( W"‚$%&%'()( ss%ƒ%#X%ƒ%VW@@ !ZX%ƒ%s#%ƒ%V‚@@ W!X%ƒ%!XZ%ƒ%vW@@ S2=8I /01234 5627689%:81%8 ;(<(=8>6?2%=()@2=?A BC%D%5%D%EF BUV%D%VW%D%#X@@F 5D01602%6(H=IM2682

BUV 471

Abstract: BUV 481 BUV-481 CI 13007 BUX 115 MJE-13007 MJE13005A BUV46 MJE13007 BUV-471
Contextual Info: F=Z SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MO K IlLI g¥lSήi!l©i POWER BIPOLAR 700 / 1000 V VCBO RANGE •c (A 2 2 4 4 4 4 5 5 5 5 5 5 5 5 6 6 7 8 8 8 9 9 9 9 9 9 9 9 12 12 12 15 15 15 15 15 15 15 15 15 16 16 16 16 24 24 30 32 32 35 vCBO (V)

CI 13007

Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
Contextual Info: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA

BUD48

Abstract: BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW38 BUW52 bux348 TR MJE 350
Contextual Info: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL M0 glJ3 ILdOT©[ l(SS POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)

BUD48DI

Abstract: BUD48 BUV41 BUX 115 BUV18 BUD 48 D44Q5 BUW38 BUV26 BUV40
Contextual Info: SGS-THOMSON M0 glJ3 ILdOT©[ l(SS GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)

darlington NPN 1000V 8a transistor

Abstract: NPN Transistor 600V TO-220 darlington NPN 600V 8a transistor transistor BU 104 darlington NPN 600V 8a transistor ESM 16 pnp transistor 800v transistor 406 specification transistor BU 109 transistor buv 90
Contextual Info: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV

BUV 48A

Abstract: BUT136
Contextual Info: H LGSAGrlBB POWER TRANSISTORS Transistors for high-speed switching at high voltage BLJL 46 BUL 46A 700 800 400 450 5.0 5.0 70 70 <0.4 <0.4 <0.8 <0.8 2.0 2.0 BUT 46 BUT 46A 850 1000 400 450 5.0 5.0 100 100 <1.5 <1.5 <0.8 <.0.8 3.0 2.5 BUT 56 BUT 56A 800 1000

TRANSISTOR BDX

Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
Contextual Info: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T

BUX23

Abstract: BUV52 BUX 115 TR MJE 350 BUX24 MJE-13004 BUV62 SOT93
Contextual Info: /= T SCS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MOÊtSOilLKgTOOljülDtgi POWER BIPOLAR 350 / 650 V VCBO RANGE •c VCBO v CEO ptot Package Type NPN v CE sat @ max (V) 'C ' >B •r td + *r* max (A) (V) (V) (W) 4 600 300 75 TO 220 MJE 13004 1 8 8 8 8 8 8

Contextual Info: NCP1612 Enhanced, High-Efficiency Power Factor Controller The NCP1612 is designed to drive PFC boost stages based on an innovative Current Controlled Frequency Fold-back CCFF method. In this mode, the circuit classically operates in Critical conduction

ncp1612

Abstract: BUV 460 C
Contextual Info: NCP1612 Enhanced, High-Efficiency Power Factor Controller The NCP1612 is designed to drive PFC boost stages based on an innovative Current Controlled Frequency Fold−back CCFF method. In this mode, the circuit classically operates in Critical conduction Mode (CrM) when the inductor current exceeds a

Contextual Info: NCP1612 Enhanced, High-Efficiency Power Factor Controller The NCP1612 is designed to drive PFC boost stages based on an innovative Current Controlled Frequency Fold−back CCFF method. In this mode, the circuit classically operates in Critical conduction Mode (CrM) when the inductor current exceeds a