siemens igbt BSM 300
Abstract: Q67040-A4221-A2 BSM 214 A Q67040-A4222-A2 Q67040-A4225-A2 Q67040-A4228-A2 Q67040-A4229-A2 Q67040-A4230-A2 Q67040-A4420-A2 Q67040-A4423-A2
Contextual Info: Duo-Packs IGBT + antiparallele Diode Typ Type V BUP 400 D Duo-Packs (IGBT + antiparallel diode) A Bestellnummer Ordering Code Gehäuse Package Bild Figure 600 14.0 Q67040-A4423-A2 P-T0220-3-1 11b BUP 602 D 600 36.0 Q67040-A4229-A2 P-T0218-3-1 10b BUP 603 D
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q67040-a4423-a2p-to220-3-1q67040-a4229-a2p-t0218-3-1+9q67040-a4230-a2q67040-a4420-a2p-t0220-3-1q67040-a4225-a2siemens igbt bsm 300q67040-a4221-a2bsm 214 aq67040-a4222-a2q67040-a4228-a2
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P 313D
Abstract: BUP313D
Contextual Info: SIEMENS BUP 313D IGBT W ith Antlparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type VfcE h 1200V 32A BUP 313D P in i Pin 2 Pin 3 G C E Package
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o-218q67040-a4228-a2-55tancesp 313d+1bup313d
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bup 313
Abstract: Q67040-A4208-A2
Contextual Info: BUP 313 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 313 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218 AB Q67040-A4208-A2 Maximum Ratings
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o-218q67040-a4208-a2dec-19-1995bup 313 |
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bup313d
Contextual Info: Infineon BUP 313D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 2 Pin 1 G Type VCE IC BUP 313D 1200V 32A Pin 3 C E Package
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Q67040-A4228-A2
Contextual Info: BUP 313D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 2 Pin 1 G Type VCE IC BUP 313D 1200V 32A Pin 3 C E Package Ordering Code
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bup 313
Abstract: Q67040-A4208-A2 bup313
Contextual Info: BUP 313 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE IC BUP 313 1200V 32A Pin 3 C E Package Ordering Code TO-218 AB Q67040-A4208-A2 Maximum Ratings
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o-218q67040-a4208-a2jul-30-1996bup 313+1bup313
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BUP 313 D
Contextual Info: BUP 313 Infineon IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 313 1200V 32A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-218 AB Q67040-A4208 Maximum Ratings
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o-218q67040-a4208dec-19-1995bup 313 d |
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Contextual Info: SIEMENS BUP 400D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 400D yCE 600V h 22A C Pin 3 E Package Ordering Code
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o-220q67040-a4423-a2fi335boss35b05+1235bd5
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BUP 312
Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
Contextual Info: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186
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bup200dbup314dbup410dq67078-a4400-a2+15q67040-a4420-a2q67078-a4401-a2q67078-a4402-a2q67040-a4407-a2q67078-a4203-a2q67078-a4205-a2bup 312buz22276 603dbuz 81bup300buz171buz,350buz,271buz90a
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buz 342 G
Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
Contextual Info: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m
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o-220o-218346s2buo-218+10buz 342 gdiode buzz347bup 312diode z104z349z332aigbt p213diode buz 300buz91a
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buz 350 equivalent
Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Contextual Info: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11
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o-220o-218buz 350 equivalentbup 203+8transistor buz 36bup 312bup 304leistungstransistorenbup 401 datasheettransistor buz 350bup 213bup 309
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615nvot-22320iemensb152-h6493-g5-x-7600+10buz mosfetmosfet buz 326bup 312bss 130bup 304bup 313615n60buz 840sgu06n60bup 307d
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-sepstr-g6551str-f6654g6551+7tda16822str-f6653strg6551igbt cross referenceka5m0565rtop224y equivalentbup 312
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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615nvbsp318sbuz mosfetmosfet buz 326+8buz mosfet 334spd14n05mosfet buz 349mosfet buz 90abuz 100 mosfetbup202buz mosfet 102sbuz mosfet 111s
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Contextual Info: S EMELAB LT D 37E D 0133107 0D0013G M • SMLB ' :£SEIV9EL.AE3 <^ V ' ~ BUP33 SILICON PNP EPITAXIAL PLANAR MECHANICAL DATA Dimensions in mm FEATURES 2k • VERY LOW SATURATION RESISTANCE 21 mai • HIGH GAIN AT HIGH CURRENT 12.7 max. • VERY FAST SWITCHING
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0d0013gbup33s250c--60w+1--55to150
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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BUP 312
Abstract: bup 313 BUP 312 drawing m4 12h CM75TF-12H
Contextual Info: CM75TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 75 Amperes/600 Volts X A C Q X Q X B uP E uP B vP E vP B wP E wP B uN E uN B vN E vN B wN E wN S N Z - M4 THD (7 TYP.) P P P
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cm75tf-12hamperes/600bup 312bup 313+2bup 312 drawingm4 12h
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BdP 285
Abstract: bdp 286 BDP286 BDP285 BUCP-52 BDP396 BDP 284 BP469 BC-148 BDP495
Contextual Info: TRANZYSTORY Wykaz oznaczert parametrów technicznych CCBO C12es C12ss t p fT P h2le XB pojemnoóò kolektor - baza pojemnoóé sprzgzenia zwrotnego w ukladzie wspòlnego «altera /OE/ pojemnosé sprzeienia zwrotnego w ukladzie wspòInego iródta /OS/ oziatotiiwoàé pomiarowa
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c12esc12ssbfi67t0220+16bf245bf240-1bf440-i05-qjt0126bfr30r-3irbdp 285bdp 286bdp286bdp285bucp-52bdp396bdp 284bp469bc-148bdp495
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PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by
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b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819
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S5 100 B112 MT RELAY
Abstract: AMP A047 CONNECTOR VAT300 relay S5 100 B112 transistor b605 A 92 B331 transistor S5 100 B112 RELAY 9F52 transistor b686 A 42 B331 transistor
Contextual Info: Cover VAT300 quick guide 14-09-2007 10:37 Page 1 GE Consumer & Industrial Power Protection GE Consumer & Industrial GE POWER CONTROLS Hornhouse Lane Knowsley Industrial Park Liverpool L33 7YQ VAT300 - User Manual GE POWER CONTROLS IBERICA Marqués de Comillas 1
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vat300st-3450ce-08225d-50677+13f-93601i-20092b-9000c/4566/es5 100 b112 mt relayamp a047 connectorrelay s5 100 b112transistor b605a 92 b331 transistors5 100 b112 relay9f52transistor b686a 42 b331 transistor
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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bzp 650 c10
Abstract: bzp 650 c12 BDP286 C9VI 5t BZP 630 C9V1 bdp 286 BDP 284 BdP 285 BDP 283 BZP 630 C24
Contextual Info: NAUKOWO- PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW ELEMENTY PÓLPRZEWODNIKOWE Katalog wyrobów CEMI 1983/1984 C z ç é é I ELEMENTY DYSKRETNE Warszawa 1983 r. SPI S TRECCI Str. Od Wydawcy .
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ntci11tc212ntc220ntc22i+11ntc50ibzp 650 c10bzp 650 c12bdp286c9vi 5tbzp 630 c9v1bdp 286bdp 284bdp 285bdp 283bzp 630 c24
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ERN 1387
Abstract: heidenhain encoder ern 1387 U20N1K5S PLC S7 200 use encoder U20N0K7S U20N0K2S VAT200 U20X0K7S ACRP10A2H U20N0K4S
Contextual Info: 39584 GE Consumer & Industrial Power Protection GE Consumer & Industrial Power Protection formerly GE Power Controls , a division of GE Consumer & Industrial, is a first class European supplier of low-voltage products including wiring devices, residential and industrial electrical
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vat20vat200vat300h-1340+11b-9000c/4601/e/exern 1387heidenhain encoder ern 1387u20n1k5splc s7 200 use encoderu20n0k7su20n0k2su20x0k7sacrp10a2hu20n0k4s
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ic A2611
Abstract: a2611 A2631 a2610 a2633 s2s65a00 A2624 18vdc power supply Epson EPD controller A2651
Contextual Info: S2S65A00 Technical Manual Rev.1.2 NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability of any kind arising out of any inaccuracies contained in this material
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s2s65a00ic a2611a2611a2631+6a2610a2633a262418vdc power supplyepson epd controllera2651
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