bup300
Abstract: BUP200 200-BUP bup 200 transistor
Contextual Info: SIEMENS IGBT Transistors • • • • • • • • • BUP 200 BUP 300 N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode
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o-220o-218c67078-a4400-a2c67078-a4203-a2+4bup300bup200200-bupbup 200 transistor
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bup transistor
Abstract: bup 200 transistor
Contextual Info: SIEMENS BUP 200 IGBT High Power Switch Preliminary Data VCE = 1200 V /c = 1.5 A • • • • • • • • • N channel MOS input (voltage-controlled) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity
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7078-a400-abup transistorbup 200 transistor |
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BUN DIODE
Abstract: 400v 15A transistor module DIODE EVP 25 400v 15A igbt module 600v 30a IGBT CM15TF-24H
Contextual Info: CM15TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 15 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E
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cm15tf-24hamperes/1200bun diode400v 15a transistor module+3diode evp 25400v 15a igbt module600v 30a igbt
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BUN DIODE
Abstract: BUP 304 600v 30a IGBT BUP 300 CM30 bup 304 equivalent bup 77 CM30TF-12H H bridge 300v 30a 12A1000
Contextual Info: CM30TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/600 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E
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cm30tf-12hamperes/600bun diodebup 304+7600v 30a igbtbup 300cm30bup 304 equivalentbup 77h bridge 300v 30a12a1000
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600v 30a IGBT
Abstract: BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A
Contextual Info: CM30TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/1200 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M F R BwN EwN F R L K
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cm30tf-24hamperes/1200600v 30a igbtbun diode+4circuit diagram upswelding circuit diagramdiode evp 25igbt 30a
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BUN DIODE
Abstract: 600v 20a IGBT igbt 600v 20a CM20TF-24H
Contextual Info: CM20TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 20 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E
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cm20tf-24hamperes/1200bun diode600v 20a igbt+1igbt 600v 20a
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BUN DIODE
Abstract: DIODE EVP 28 CM50TF-12H bup transistor
Contextual Info: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R
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cm50tf-12hamperes/60020-25khzbun diode+2diode evp 28bup transistor
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BUN DIODE
Contextual Info: m u m ex Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 |- U BuP EuP U BvP EvP D 8wP EwP l ;-G 4 o O n n 0 4 n n - m S - DIA— (2 TYP.) BuN BuN E EuN i—i BvN EvN r—I — K- CM20TF-24H SÍX-IGBT IGBTMOD H-Series Module
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cm20tf-24hamperes/1200bun diode |
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buz 342 G
Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
Contextual Info: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m
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o-220o-218346s2buo-218+10buz 342 gdiode buzz347bup 312diode z104z349z332aigbt p213diode buz 300buz91a
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leistungstransistoren
Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Contextual Info: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m
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o-220buz12abuz11s2buz10s2+13o-218346s2bup410dleistungstransistorenbup314dbuz 342 gsiemens 230 95 obup 307dbuz,350buz,271bup400dbup313dbup314
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BUZ332A
Abstract: BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345
Contextual Info: Typenübersicht Selection Guide SIEM ENS SIPMOS Power Transistors N Channel Power Transistors s > 7 X s TO-220 AB ^D S ^ D S o n V Q 50 50 50 50 50 50 50 50 50 18m 28m 30m 35m 40m 55m 70m 0.1 0.12 60 60 60 60 60 18m 40m 70m 0.10 0.15 100 100 100 100 100
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vut05152o-220o-218o-204+11346s2buz332abuz54abuz,350buz p channelbup 312buz,271buz94buz357buz 91 fbuz345
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TRANSISTOR JC
Abstract: 748 transistor on transistor 304 transistor 307 bup304 bup transistor bup 200 transistor
Contextual Info: SIEMENS IGBT Transistors • • • • • • • • • BUP 304 N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode
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o-218c67078-a4200-a2c67078-a4201-a2transistor jc+6748 transistor ontransistor 304transistor 307bup304bup transistorbup 200 transistor
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SIEMENS 1200
Abstract: siemens dioden bup203 C67078-A4400-A2
Contextual Info: SIEMENS IGBTLeistungstransistoren Bestellnummer Ordering code h LU Typ Type IGBT Power transistors A Gehäuse Package Bild Figure BUP 202 1000 12.0 C67078-A4401-A2 TO-220 AB 8b BUP 203 1000 21.0 C67078-A4402-A2 TO-220 AB 8b BUP 302 1000 12.0 C67078-A4205-A2
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c67078-a4401-a2c67078-a4402-a2c67078-a4205-a2c67078-a4202-a2+7c67078-a4200-a2o-220o-218siemens 1200siemens diodenbup203c67078-a4400-a2
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LS303
Abstract: BUP 303 bup203
Contextual Info: SIEMENS IGBT Transistors N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low temperature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode BYP 101 G E Type ^CE BUP 203 1000 V
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ls303bup 303bup203 |
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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615nvbsp318sbuz mosfetmosfet buz 326+8buz mosfet 334spd14n05mosfet buz 349mosfet buz 90abuz 100 mosfetbup202buz mosfet 102sbuz mosfet 111s
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BUP314
Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for
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o-220o-218bup314bup307+8igbt typessiemens bup314bup401buz334buz mosfetmosfet welding inverter334 mosfetflyback inverter welding
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7060a
Abstract: TOP3 package bup transistor
Contextual Info: S IE M E N S BUP 101 SIRET Siemens Ring Emitter Transistor VCE = 1000 V lc =15 A • • • N channel B rea kdo w n-p roo f Package: TO-218 AA TOP-3 ') Type Ordering code BUP 101 C 6 7060-A 1000-A 2 Maximum Ratings at T{ = 25 °C, unless otherw ise specified.
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o-218060-a000-a7060a+2top3 packagebup transistor
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buz 350 equivalent
Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
Contextual Info: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11
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o-220o-218buz 350 equivalentbup 203+8transistor buz 36bup 312bup 304leistungstransistorenbup 401 datasheettransistor buz 350bup 213bup 309
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BUP 312
Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Contextual Info: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B
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buz10s2buz11abuz11s2buz12a+7o-220o-218bup 312buz 91 fbup 303 igbtdiode buz 537bup 203
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BUP 307
Abstract: transistor 304 transistor d 304 bup transistor bup307 transistor 307 bup 200 transistor
Contextual Info: SIEMENS BUP 304 BUP 307 IGBT High Power Switch VCE = 1000 V /1 2 0 0 V = 25 A lc • • • • • • • • • N channel MOS input (voltage-controlled) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity
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o-2187078-a200-a201-a+8100msbup 307transistor 304transistor d 304bup transistorbup307transistor 307bup 200 transistor
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siemens igbt BSM 25GD 100D
Abstract: siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D BTS 131 SIEMENS Bts 629 BSS145 siemens igbt BSM 25 gb 100 d
Contextual Info: Typenübersicht/Selection Guide SIPMOS Power MOS Transistors Families of Types Type ^DS(max) ^D S(on)m ax ^D{max] V Q A Ptoi Package Page W N channel enhancement types £ 0 BUZ 10 EÜL BUZ 10 L 50 0.07 0.07 23 23 75 75 TO-220AB TO-220AB 690 700 £ □ BUZ 11
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o-220abo-2202x1002x150+11100galsiemens igbt bsm 25gd 100dsiemens igbt bsm 25gdbsm25gd100dbss 97bts412absm15gd100dbts 131 siemensbts 629bss145siemens igbt bsm 25 gb 100 d
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thyristor Q 720 To220
Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic
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thyristor q 720 to220siemens bsm200ga120dn2bup transistorbsm50gd120dn2+6bsm15gdsiemens igbtbsm100gb120dn2bsm30gd60dn2bsm25gd120dn2bsm20gd60dn2
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BUP162
Abstract: 060-C1
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification BUP162 BUP SERIES TRANSISTORS ●FEATURES：•HIGH VOLTAGE CAPABILITY ●APPLICATION：■FLUORESCENT LAMP ■HIGH SPEED SWITCHING ■ELECTRONIC BALLAST ●Absolute Maximum Ratings（Tc=25°C） ■WIDE SOA
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bup162o-251060-c1 |
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BUP142
Abstract: Shenzhen SI Semiconductors
Contextual Info: Shenzhen SI Semiconductors Co., LTD. Product Specification BUP142 BUP SERIES TRANSISTORS ●FEATURES：•HIGH VOLTAGE CAPABILITY ●APPLICATION: ■FLUORESCENT LAMP ■HIGH SPEED SWITCHING ■ELECTRONIC BALLAST ●Absolute Maximum Ratings（Tc=25°C） ■WIDE SOA
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bup142o-251shenzhen si semiconductors |
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