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    BUL791 Search Results

    BUL791 Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BUL791
    Bourns NPN SILICON POWER TRANSISTOR Original PDF 97.35KB 6
    BUL791
    Power Innovations NPN SILICON POWER TRANSISTOR Original PDF 115.67KB 7
    BUL791
    Transys Electronics BJT, NPN, Power Transistor, IC 4A Scan PDF 845.05KB 6
    BUL791
    Transys Electronics NPN SILICON POWER TRANSISTOR Scan PDF 845.05KB 6

    BUL791 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUL791

    Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric


    Original
    bul791o-220l791cfbl791crb PDF

    Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR Designed Specifically for High Frequency Electronic Ballasts up to 125 W hFE 6 to 22 at VCE = 1 V, IC = 2 A Low Power Losses On-state and Switching Key Parameters Characterised at High Temperature Tight and Reproducible Parametric


    Original
    bul791o-220l791cfbl791crb PDF

    BUL791

    Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High


    Original
    bul791o-220 PDF

    Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric


    Original
    bul791o-220l791cfbl791crb PDF

    Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR C o p y rig h t 1997, Power Innovations Limited, UK • Designed Specifically for High Frequency Electronic Ballasts up to 125 W • hFE 6 to 22 at V C e = 1 V , I c = 2 A • Low Power Losses On-state and Switching


    OCR Scan
    bul791o-220 PDF

    Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric


    Original
    bul791o-220l791cfbl791crb PDF

    BUL791

    Abstract: si 220 mh
    Contextual Info: TflJUISYS BUL791 NPN SILICON POWER TRANSISTOR fUCTKONICS LIMITED • Designed Specifically for High Frequency Electronic Ballasts up to 125 W • hFE 6 to 22 at VCE = 1 V, lc = 2 A • Low Power Losses On-state and Switching • Key Parameters Characterised at High


    OCR Scan
    bul791t0220si 220 mh PDF

    BUL791

    Contextual Info: BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses On-state and Switching ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric


    Original
    bul791o-220 PDF

    TIC106D equivalent

    Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
    Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers


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    o-220ot-932m/tsp0711tic106d equivalent+9tic106m scrbd249 equivalenttip41c equivalentbt137 equivalentreplacement tyn412tic225m equivalentmalaysia tic226dtic226d equivalenttic126m equivalent PDF

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original
    2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171dk53dk522sc4977mje102bd6992sa1046bu808dfi equivalent2n3055 replacementmj2955 replacementbuh513 PDF

    BUL791

    Abstract: BULD125KC TO-5 PACKAGE case for transistor
    Contextual Info: c f AN SYS BULD125KC NPN SILICON TRANSISTOR WITH INTEGRATED DIODE IUCTROMICS LIMITED Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability Diode t rr Typically 1 TO-220 PACKAGE TOP VIEW


    OCR Scan
    buld125kct0220bul791to-5 package case for transistor PDF

    TIC106M SCR

    Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
    Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers


    Original
    o-220ot-932m/tsp0904tic106m scr+9tic106d equivalenttip41c equivalenttip42c equivalentbd242 transistor equivalenttransistor equivalent of bu406tip36c equivalentbtb06-600tic126d equivalenttic116d equivalent PDF

    equivalent transistor bul128

    Abstract: HALL EFFECT 21E equivalent of transistor 2sc4106 2sC2335 TRANSISTOR equivalent Shortform Transistor Guide BUL208 BUF656B KSE13007 equivalent BUD620 BUL128 replacements
    Contextual Info: Bipolar Power Transistors Data Book 1997 General Information Data Sheets Addresses Table of Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original
    equivalent transistor bul128hall effect 21eequivalent of transistor 2sc41062sc2335 transistor equivalent+6shortform transistor guidebul208buf656bkse13007 equivalentbud620bul128 replacements PDF

    DK53

    Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
    Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original
    2n30162n30212n30222n3023+162n30242n30252n30262n30552n30762n3171dk53dk52bu724asmje20552n3055 replacementbux98pibd263bd699bd2922n5037 PDF