D1805
Abstract: c820 6C TRANSISTOR MARKING BTD1805J3 npn transistor marking code 6c
Contextual Info: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805J3 Spec. No. : C820J3 Issued Date : 2004.12.19 Revised Date :2009.02.04 Page No. : 1/ 6 BVCEO IC RCESAT 60V 5A 100mΩ Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
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D1805
Abstract: BTD1805FP
Contextual Info: CYStech Electronics Corp. Spec. No. : C820FP Issued Date : 2005.03.29 Revised Date :2005.07.26 Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805FP Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
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D1805
Abstract: BTD1805I3
Contextual Info: Spec. No. : C820I3 Issued Date : 2004.12.19 Revised Date :2009.02.04 Page No. : 1/ 5 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 BVCEO IC RCESAT 60V 5A 100mΩ Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
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D1805
Abstract: BTD1805J3
Contextual Info: CYStech Electronics Corp. Spec. No. : C820J3 Issued Date : 2004.12.19 Revised Date :2005.07.26 Page No. : 1/ 4 Low Vcesat NPN Epitaxial Planar Transistor BTD1805J3 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
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c820j3btd1805j3o-252ul94v-0+1d1805
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d1805
Abstract: BTD1805I3
Contextual Info: Spec. No. : C820I3 Issued Date : 2004.12.19 Revised Date :2005.07.26 Page No. : 1/ 4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805I3 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
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D1805
Abstract: TRANSISTOR C 4460 TO126ML BTD1805 btd1805d3
Contextual Info: Spec. No. : C820D3 Issued Date : 2005.03.29 Revised Date :2006.04.21 Page No. : 1/ 4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805D3 Description The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
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c820d3btd1805d3ul94v-0d1805+3transistor c 4460to126mlbtd1805
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