BTB 600 Search Results

rfb 7808

Abstract: 7808 RFB 7808 V 0.6 - 0.5 4,7 mkH
Contextual Info: Steckverbindersystem Connector system RF K 2 RFK Technische Daten / Technical Data Technische Daten Technical data WtB WtB BtB BtB Stiftleisten Pin strips Seite 8 - 37 (Page 8 - 37) (Seite 38 - 41) (Page 38 - 41) (Seite 42 - 45) (Page 42 - 45) Raster Pitch

smd diode l232

Abstract: BTB48-12S25D c5t smd BTB05-12W12D btb12 application note BTB05-12W12S BTB48-12W12D BTB24-12S25D BTB05-05S60D BTB24-05S60S
Contextual Info: The Fifth Generation, Ultra Small Size, Isolated Type DC-DC Converter Beiinix_3Wait BTB Series BTB series is a thin, high efficiency, low noise isolated type DC-DC converter. To achieve miniaturization a new circuit was adopted. Circuit construction is made simple yet highly efficient.

BTB05

Abstract: BTB05-03S80S BTB05-03S80 BTB05-12S25 c3047 BTB12-12W12 BTB24-03S80 BTB05-05S60 btb24-05s60 BTB050
Contextual Info: BELLNIX The Fifth Generation, Ultra Small Size, Isolated Type DC-DC Converter Wide Input Voltage Range, Save Mounting Space！ 3 Watt BTB Series RoHS Isolated Compliance Low bond Small Size Single and Dual Output DC-DC Converters/BTB 3Watt Series The Fifth Generation, Ultra Small Size, Isolated Type DC-DC Converter

BTA24

Abstract: BTB600 BTB-600 BTB800 BTB 600 BTB6 BTA 600 triac TRIAC BTA24 BTB-800 btb 800
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 BTA24 / BTB24 Triac Series Absolute maximum ratings Tamb=25oC Parameter Value Unit peak repetitive off-stage voltage BTA/BTB-600 Symbol VDRM , VRRM 600 V Test condition

EUPEC DD 600

Abstract: EUPEC DD 89 EUPEC powerblock
Contextual Info: h IE EUPEC J> m 3 *4 0 3 5 1 ? 0001555 BTb •ILJPEÇ ^ DD 89 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte_ Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage tVj ——40°C .tyj maX

TO227

Abstract: irc resistors BTb 600 600w power supply unit power RESISTORs
Contextual Info: FOR IMMEDIATE RELEASE, CO1120 February 26, 2008 For more information, contact: Gary Bleasdell, Thick Film Business Unit Director IRC, Inc. 361-992-7900 gary.bleasdell@irctt.com Beth Gaddy, BtB Marketing 919-872-8172 bgaddy@btbmarketing.com Power resistors feature low inductance for high frequency, high-speed pulse applications…

BCY71

Abstract: BCY70 BCY72 silicon planar epitaxial transistors
Contextual Info: BCY70 to 72 / v PHILIPS INTERNATIONAL SbE D • TllOÖSb T r 2 D0M2iab 7 - 0 ? . bTb BIP HI N SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended for general purpose industrial applications. The BCY71 is a low noise version.

RV701

Abstract: BCY71 BCY72 BCY70 004210 D04211
Contextual Info: BCY70 to 72 PHILIPS IN TERNATIONA L SbE D 711 002 b DOMElOti bTb BIP HIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended fo r general purpose industrial applications. The BCY71 is a low noise version. QUICK REFERENCE D A TA

CB332

Abstract: RD91 TRIACS 40A triacs btb 15 700 jonction 4040Q
Contextual Info: S G S-THOHSON ?ac D 7 ^ 2 3 7 0007^07 BTA/BTB 40, A TRIACS This new design of plastic insulated power triacs offers maximum efficiency with maximum ease of mounting. FEATURES : — Glass passivated chip. Fast-on connexions. — I g t specified in four quadrants.

silicon planar epitaxial transistors

Contextual Info: BCY70 to 72 PHILIPS IN TERNATIONA L SbE D 711 002 b DOMElOti bTb BIP HIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended fo r general purpose industrial applications. The BCY71 is a low noise version. QUICK REFERENCE D A TA

triac BT 408

Contextual Info: BT A2 6 SERI ES ST AN DARD 2 6 A T RI ACs MAIN FEATURES Symbol Value Unit IT RMS 26 A V(DRM)/VRRM 600 to 800 V lGT(Q1) 20 to 50 mA GENERAL DESCRIPTION Available either in through-hole or surface and T25 mount packages, the BTA/BTB 24-25-26 triac series is suitable for

200B

Abstract: 400B 600B 700B 800B BTB24
Contextual Info: 30E D • 7^237 DQ3175b ö SGS-THOMSON "T -Z S -1 7 BTB 24 B S G S-THOMSON TRIACS GLASS PASSIVATED CHIP Igt SPECIFIED IN FOUR QUADRANTS DESCRIPTIO N New range suited for applications such as phase control and static switching. ABSO LU TE RATINGS limiting values

TRIAC BTA-SERIES

Abstract: 082005 bta 700 TRIAC BTB 08 TRIAC BTB 12 600 B btb 38 T2515 triac 371 200S 400S
Contextual Info: 30E D • 7^2^237 QÜ31b52 7 ■ £ ÿ j SGS-THOMSON OiMHLiOTMKS 'T-ZS'-I 5 BTA/BTB 08 S S G S-THOMSON SENSITIVE GATE TRIACS ■ GLASS PASSIVATED CHIP ■ I g t SPECIFIED IN FOUR QUADRANTS ■ AVAILABLE IN INSULATED VERSION -> BTA SERIES INSULATING VOLTAGE

bta 700

Abstract: 00144616
Contextual Info: 3GE S ^ • 7^5^537 QG31b40 0 ■ "T « 2S - È > S G S -T H O M S O N oœmiûTTIïMOûi BTA/BTB 08 A S G S-TH0MS0N SENSITIVE GATE TRIACS ■ GLASS PASSIVATED CHIP ■ Igt SPECIFIED IN FOUR QUADFiANTS ■ AVAILABLE IN INSULATED VERSION -> BTA SERIES (INSULATING VOLTAGE

TRIAC BTA 04 400T

Abstract: TRIAC BTB 04 200T 600T 800T BTA 800 BTA 51 triac
Contextual Info: 3DE D r = Z ^ 7 # • D D B l b Q O T Hi S G S - T H O M S O N LlùTTiMOOS 5 ' T'-'ZS^3> BTA/BTB 04 T S G S-THOMSON SENSITIVE GATE TRIACS ■ GLASS PASSIVATED CHIP ■ Ig t SPECIFIED IN FOUR QUADRANTS ■ AVAILABLE IN INSULATED VERSION BTA SERIES INSULATING VOLTAGE

BTB19-700B

Abstract: BTB19-400B BTB19-600B BTB19-200B
Contextual Info: S G S-THOMSON 7flC 7T5T237 0D07fl‘ 4 f ' Ü ïl i. BTB 19 B UNINSULATECTmiACS TRIACS N O N ISOLÉS 7 -SS'-zS' I TR M S = 20 A /T c = 75°C N ew range suited fo r applications such as phase co n tro l and sta tic sw itchin g . — (ilass passivated chip.

CB - SGS -12

Abstract: btb 16 700 bw
Contextual Info: 30E D • DQ3174Û *i ■ f Z 7 SGS -THOMSON ^ P 2 S -iS BTB 16 BW S G S-TH0MS0N SNUBBERLESS TRIACS ■ Itrms = 16 A at Tc = 90 °C. ■ ■ ■ ■ V drm : 200 V to 800 V. Ig t = 50 mA QI-II-IIL . GLASS PASSIVATED CHIP. HIGH SURGE CURRENT : Itsm = 150 A.

btb 400c

Abstract: 400C 600C BTA SERIES 368p BTA 600C
Contextual Info: 3DE D H 7^2^537 □ □Slbtffi S • SG S-TH O M SO N R{iin l^ I[Li girP®RDD©l 'T '-Z S -lS BTA/BTB 08 C S G S-TH0MS0N TRIACS ■ ■ ■ ■ GLASS PASSIVATED CHIP EXCELLENT (dv/dt c > 5 V/(_is Igt SPECIFIED IN FOUR QUADRANTS AVAILABLE IN INSULATED VERSION ->

btb 400c

Abstract: LT 7223 BTA 600C 400C 600C BTA SERIES
Contextual Info: 30E D • 7*^23? DG31b72 T '- T J E Z 'ìS 2 ■ SGS-THOMSON V# ii^nm»li ?l sm0S_ BTA/BTB 10 C « Q u g ' i n u m g u n S G S-TH0MS0N TRIACS ■ GLASS PASSIVATED CHIP ■ EXCELLENT (dv/dt c > 5 V/|iS ■ Ig t SPECIFIED IN FOUR QUADFiANTS ■ AVAILABLE IN INSULATED VERSION ->

btb15

Abstract: BTB15 600 BTB15B 200B 400B 600B 700B 800B marking BTJ SGS-Thomson
Contextual Info: 30E D • 7TSR237 0 0 3 1 73b 5 ■ f Z T SG S -TH O M SO N È ^ ~ T -2 S -1 5 s 6 "s - t h o h 's on BTB 15 B TRIACS ■ GLASS PASSIVATED CHIP ■ I g t SPECIFIED IN FOUR QUADFiANTS DESC RIPTIO N New range suited for applications such as phase control and static switching.

bta 600b

Abstract: bta 700 TRIAC BTA 16 600b TRIAC BTA-SERIES TRIAC BTB 600b 200B 400B 600B 700B 800B
Contextual Info: 3GE ]> • 7^2=1237 Q D 3 1 b 4 4 6 SGS-THOMSON ^ 0 ÌM IÌL[i M(a)«S_BTA/BTB 08 B G S - T H 0 MS 0 N S TRIACS ■ GLASS PASSIVATED CHIP ■ EXCELLENT (dv/dt)c > 10 V/ns ■ I g t SPECIFIED IN FOUR QUADRANTS ■ AVAILABLE IN INSULATED VERSION -> BTA SERIES (INSULATING VOLTAGE

Contextual Info: AD VA NC ED PO WE R T E C H N O L O G Y □ EST'IO'I 0 0 0 0 5 0 4 bTB * A V P 41E D A Ô'W dvanced P O W iz R O s {2 ) 'T - ÿ i- is . APT40M80AFN 400V 58.0A 0.08; APT35M80AFN 350V 58.0A 0.08L POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFE

BTB12AW

Abstract: T17A marking rzr
Contextual Info: 30E ]> • 7^5^237 GD3172G 1 ■ _- - SGS-THOMSON T -is -is BTB 12 AW V# S G S- THOMSON SNUBBERLESS TRIACS ■ It r m s = 12 A a t T c = 9 5 °C . ■ V d r m : 200 V to 800 V. ■ Ig t = 75 mA QI-N-III . ■ GLASS PASSIVATED CHIP. ■ HIGH SURGE CU RRENT : I t s m = 120 A.

BTB 600

Abstract: 7C12C BTB08
Contextual Info: 30E V# m ]> 7^5^37 0031704 S G S -T H O M S O N ^ fS O^D^^@g[Lg î^©iOsgS_ BTB 08 CW S G S-THOMSON SNUBBERLESS TRIACS • ■ ■ ■ . ■ Itrms = 8 A at To = 95 °C. V drm :200 V to 800 V. Iqt = 35 mA (QI-II-III . GLASS PASSIVATED CHIP. HIGH SURGE CURRENT : It s m = 80 A.