Datasheet Archive: BTA10 GP datasheets

BTA10 GP Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
HN1D05FE		Toshiba Electronic Devices & Storage Corporation	Switching Diode, 400 V, 0.1 A, ES6	Datasheet

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BTA10 GP	STMicroelectronics	Triacs	Original	PDF	60.68KB	4
BTA10GP	STMicroelectronics	Triacs	Original	PDF	60.68KB	4
BTA10-GP	STMicroelectronics	TRIACS	Original	PDF	60.68KB	4

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: ^ 7 SGS-THOMSON BTA10 GP TRIACS FEATURES • LOW Ih = 13mA max ■ HIGH SURGE CURRENT : Ijs m = 120A ■ Ig t SPECIFIED IN FOUR QUADRANTS ■ INSULATING VOLTAGE = 2500V rm S (UL RECOGNIZED : E81734) DESCRIPTION The BTA10 GP's use high performance, glass passivated chips.	OCR Scan	BTA10 E81734) 500mA T0220AB BTA12-XXX BTB12-xxx T0220AB	PDF
bta10 Abstract: BTA10 GP GP 458 Contextual Info: BTA10 GP TRIACS . . FEATURES LOW IH = 13mA max HIGH SURGE CURRENT : ITSM = 120A IGT SPECIFIED IN FOUR QUADRANTS INSULATING VOLTAGE = 2500V RMS (UL RECOGNIZED : E81734) A1 A2 DESCRIPTION The BTA10 GP’s use high performance, glass passivated chips. The insulated TO220AB package, the high surge	Original	BTA10 E81734) O220AB O220AB BTA10 GP GP 458	PDF
GP 458 Contextual Info: Æ 7 SGS-THOMSON IM S©i[Ul SM liiiD(gi BTA10 GP TRIACS FEATURES • LOW Ih = 13mA max . HIGH SURGE CURRENT : It s m = 120A . Ig t SPECIFIED IN FOUR QUADRANTS ■ INSULATING VOLTAGE = 2500V(rms) (UL RECOGNIZED: E81734) DESCRIPTION The BTA10 GP’s use high performance, glass pas	OCR Scan	BTA10 E81734) T0220AB T0220AB 500mA GP 458	PDF
Contextual Info: ^ • 7# S G S -T H O M S O N IlD ffiim iE r a a M i B T A 10 G P TRIACS FEATURES • LOW Ih = 13mA max . HIGH SURGE CURRENT : Ij s m = 120A . Iq t s p e c ifie d in f o u r q u a d r a n t s . INSULATING VOLTAGE = 2500V RMS (UL RECOGNIZED : E81734) DESCRIPTION	OCR Scan	E81734) BTA10 T0220AB	PDF