BT5401 Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High V oltage Transistor M M BT5401LT1 PNP Silicon Motorola Preferred Device CASE 318-08, STYLE 6 S O T-23 TO— 236AB M AXIM U M RATINGS Rating Collector- Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

BT5401

Abstract: GMBT5401
Contextual Info: 1/2 GM BT5401 P NP E PITAXI AL P L ANAR T RANS ISTO R Description The BT5401 is designer for general purpose applications requiring high breakdown voltages. Package Dimensions SOT-23 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistor PMBT5551 FEATURES PINNING • Low curren t max. 300 mA PIN • High voltage (max. 160 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • G eneral purpose • Telephony.

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

Contextual Info: 101 Surface Mount Devices High Voltage Transistors Ratings Type Package v CEO V v CBO V typ MHz Pinout See Section VII 3 0 /5 3 0 /5 3 0 /5 5 0 /5 60 60 60 100 AE R F F 10/1 200 F 5 0 /5 10/1 2 0 /2 2 0 /2 100 F 200 50 50 F F R 3 0 /5 60 AE 3 0 /5 3 0 /5 2 0 /2

2N5401 SOT-23

Abstract: sot-23 marking LC MMBT5401 041 sot-23 2N5401 BT5401
Contextual Info: II CO 2N5401 / BT5401 I V IIL J PNP GENERAL PURPOSE AMPLIFIER INCORPORATED Features • • • High C ollector-Em itter Breakdown Voltage Epitaxial Planar Die Construction Available in both Thru-H ole and Surface M ount Packages 2N5401 BT5401 TO-92 SOT-23

2SC9014

Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
Contextual Info: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225

MBT5550

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBT5550 NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 16 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor PMBT5550

BT5401

Contextual Info: Transistors Reel = 500pcs, Bag = lOOpcs. SOT23 Case NPN T ype m iniR eel O rd e r N um ber N P N H ig h F req u en cy BF840 73-8400 BF841 73-8410 M M BTH 10 73-0010 M M BT918 73-0918 N P N L ow N ise M M BT5089 73-5089 M M BT5088 73-5088 BC850B 73-8501 B C850C

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

BT5401

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistor PMBT5550 FEATURES PINNING • Low curren t max. 300 mA PIN • Low voltage (max. 140 V). APPLICATIONS DESCRIPTION 1 base 2 em itter 3 collector • Telephony. DESCRIPTION 3 _

BT5401

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBT5551 NPN high-voltage transistor Product specification Supersedes data of 1997 Jul 02 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor PMBT5551