BT 333 FP 25 Search Results

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

L-23014-01

Abstract: L24002 mitsubishi cdram
Contextual Info: L-21001-0B MITSUBISHI ELECTRIC Mitsubishi DRAM Technical Direction High Performance, Low Power,High Density,High Speed etc. High Density Wide Bit Organization 1G High Speed 512M Direct Rambus TM x32 256M DDR 128M SDRAM EDO Fast Page 64M DRAM Self Refresh

DDR200

Abstract: DDR266A DDR333 DDR400 DDR400B
Contextual Info: HY5DU56422D L FP HY5DU56822D(L)FP HY5DU561622D(L)FP 256Mb DDR SDRAM HY5DU56422D(L)FP HY5DU56822D(L)FP HY5DU561622D(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

DDR266A

Abstract: DDR266B DDR333 DDR400 DDR400B HY5DU561622E HY5DU56822E DDR200
Contextual Info: 256Mb DDR SDRAM HY5DU56822E L FP HY5DU561622E(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

DDR200

Abstract: DDR266A DDR266B DDR333 DDR400 DDR400B HY5DU561622E HY5DU56822E
Contextual Info: 256Mb DDR SDRAM HY5DU56822E L FP HY5DU561622E(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

DDR200

Abstract: DDR266A DDR266B DDR333 DDR400 DDR400B HY5DU561622E HY5DU56822E
Contextual Info: 256Mb DDR SDRAM HY5DU56822E L FP HY5DU561622E(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DU561622F

Abstract: DDR200 DDR266A DDR266B DDR333 DDR400 DDR400B DDR500
Contextual Info: 256Mb DDR SDRAM HY5DU56822F L FP HY5DU561622F(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DU5616

Abstract: DDR200 DDR266A DDR333 DDR400 DDR400B
Contextual Info: HY5DU56422D L FP HY5DU56822D(L)FP HY5DU561622D(L)FP 256Mb DDR SDRAM HY5DU56422D(L)FP HY5DU56822D(L)FP HY5DU561622D(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

BUZ64

Abstract: transistor buz 350 BUZ 336 siemens 350 98 transistor buz 10 C160
Contextual Info: SIEM EN S SIPMOS Power Transistor BUZ 64 • N channel • Enhancement mode • Avalanche-rated Type Vos BUZ 64 400 V Ia 11.5 A ^DS on 0.4 Í2 Package 1) O rdering Code TO-204 AA C67078-S1017-A2 Maximum Ratings Parameter Symbol Continuous drain current, 7C = 31 “C

Contextual Info: 256Mb DDR SDRAM HY5DU561622F L FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 /Nov. 2007

Contextual Info: 256Mb DDR SDRAM HY5DU561622F L FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 /Nov. 2007

Contextual Info: 64Mb Synchronous DRAM Specification P2V64S20DTP P2V64S30DTP P2V64S40DTP Deutron Electronics Corp. 8F, 68, SEC. 3, NANKING E. RD., TAIPEI 104, TAIWAN, R. O. C. TEL : 886-2-2517-7768 FAX : 886-2-2517-4575 http: // www.deutron.com.tw 64Mb Synchronous DRAM P2V64S20DTP 4-BANK x 4,194,304-WORD x 4-BIT

Contextual Info: 512Mb DDR SDRAM HY5DU12422C L FP HY5DU12822C(L)FP HY5DU121622C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

DDR200

Abstract: DDR333 DDR400 DDR400B HY5DU121622
Contextual Info: 512Mb DDR SDRAM HY5DU12422C L FP HY5DU12822C(L)FP HY5DU121622C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

DDR200

Abstract: DDR333 DDR400 DDR400B
Contextual Info: 512Mb DDR SDRAM HY5DU12422C L FP HY5DU12822C(L)FP HY5DU121622C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: S D " 5 4 132“ 0 I I m IN SERTIO N DEPTH OF FPC SECT. J - J SC A LE 15:1 ACTUATOR C K T. NO. I MARK 6 .5 5 ( o 7 0 J - =l I - ? ' U / c t t - S ) (WHEN ACTUATOR IS OPENED) h - J (WHEN ACTUATOR IS LOCKED) TTTTTTTTTTTTTTTTTT JT T n T T T T T T T 0.6 3.95

Contextual Info: 512Mb DDR SDRAM HY5DU12422C L FP HY5DU12822C(L)FP HY5DU121622C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DU121622

Abstract: DDR200 DDR333 DDR400 DDR400B
Contextual Info: 512Mb DDR SDRAM HY5DU12422C L FP HY5DU12822C(L)FP HY5DU121622C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DU121622

Abstract: DDR200 DDR333 DDR400 DDR400B bt 333 fp 25
Contextual Info: HY5DU12422B L FP HY5DU12822B(L)FP HY5DU121622B(L)FP 512Mb DDR SDRAM HY5DU12422B(L)FP HY5DU12822B(L)FP HY5DU121622B(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: 512Mb DDR SDRAM HY5DU12422C L FP HY5DU12822C(L)FP HY5DU121622C(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

DAP235U

Abstract: 2SC4116 model s26 sharp 2SC4116 hyper BAND TV TUNER pin
Contextual Info: quarp rnisiFTriRNTTAT. AND PROPRIETARY Contents No. Contents Records of revision 3.4 MODEL VTST6HZ53 Contents Tuning characteristics 3.4.1 Band edge tuning margin 7 3. 4.2 Local oscillator frequency drift 7 3. 4.3 Local oscillator frequency drift 7 Page 1

SMBJ8.5CA

Abstract: SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A SMBJ100A
Contextual Info: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 600 Watt Peak Power ■ Dimension Dim SMB DO-214AA ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 4.06 4.57 0.160 0.180 B 3.30 3.94 0.130

SMBJ8.5CA

Abstract: EZ 711 253 SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A
Contextual Info: SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD SMBJ5.0 - SMBJ440CA 600W Surface Mount Transient Voltage Suppressors Features z z z z z z Working peak reverse voltage range – 5.0V to 440V. Peak power dissipation 600W @10 x 1000 us Pulse Low profile package. Excellent clamping capability.

PME26605001AA

Abstract: PMG33302001AA SL32N SL36Z sl32s mmc-1 pentium PMG26602001AA
Contextual Info: Mobile Pentium II Processor Specification Update Release Date: January 25, 1999 Order Number: 243887-007 The Mobile Pentium II processor or the Intel® Pentium II Processor Mobile Module may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current