BSY 39 Search Results

bsy62

Abstract: BSY18 transistor w1w 2N708 2N743 KC-C10 BSY17 BSY62A Transistor 2N708 Q60218-Y17
Contextual Info: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, BSY 62 and BSY 63 are double-diffused epitaxial NPN silicon planar RF transistors in a case 1 8A 3 DIN 41876 TO-18 . Their collectors are elec­ trically connected to their cases. Transistor BSY 17 corresponds to type 2N 743,

BSY18

Abstract: BSY17 Q60218-Y17 Q60218-Y18 Q60218-Y62-A Q60218-Y62-B Q60218-Y63 bd 743 transistor
Contextual Info: NPN-HF-Transistoren für Schalteranwendungen BSY BSY - BSY BSY 17 18 62 63 B SY 17, B SY 18, B S Y 62 und B S Y 63 sind doppeltdiffundierte epitaktische NPN-Silizium-HFPlanar-Transistoren im Gehäuse 18 A3 DIN 41 876 T O -18 . Der Kollektor ist mit dem Gehäuse

transistor w1w

Abstract: 2N708 2N743 BSY17 BSY18 BSY62A BSY62B Q60218-Y17 Q60218-Y18 Q60218-Y62-A
Contextual Info: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, BSY 62 and B S Y 63 are double-diffused epitaxial NPN silicon planar RF transistors in a case 1 8 A 3 DIN 41876 TO-18 . Their collectors are elec­ trically connected to their cases. Transistor B S Y 17 corresponds to type 2 N 7 4 3 ,

BSY17

Abstract: BSY18 transistor w1w 2N708 BSY62 2N743 BSY62A BSY62B Q60218-Y17 Q60218-Y18
Contextual Info: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, B SY 62 and B S Y 63 are double-diffused epitaxial N PN silicon planar RF transistors in a case 1 8 A 3 DIN 41876 TO-18 . Their collectors are elec­ trically connected to their cases. Transistor B S Y 17 corresponds to type 2N 7 4 3 ,

BSY56

Abstract: bsy 56 BSY55 h21e
Contextual Info: BSY 55 BSY 56 NPN S ILIC O N TR A N S IS TO R S , E P IT A X IA L P LA N A R TR A N S IS T O R S N P N S IL IC IU M . P L A N A R E P IT A X IA U X - LF amplification A m p lific a tio n B F 120 V V CBO h2 iE 1 5 0 m A fT j 4 0 - 120 BSY 55 (100 - 300 BSY 56

BSY56

Abstract: A1441 BSY55 BSY 56 afe 1000
Contextual Info: BSY 55 • BSY 56 w Silicon NPN Epitaxial Planar Switching Transistors Anwendungen: HF-Verstärker und schnelle Schalter Applications: RF a m plifiers and high sp e e d switches Besondere M erkmale: Features:

bsy34

Contextual Info: 2SC D • 023SbüS 0DG4Ô31 G « S I E G T -lS -tf N P N Silicon Planar Transistors BSY34 - SIEMENS AKTIEN6E SE LL SC HA F BSY58 BSY 34 and BSY 58 are double diffused epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41 873 . The collectors are electrically connected to the cases.

BSY68

Abstract: BSY34 BSY58 S220 Q60218-Y34 Q60218-Y58 kt510 kt-510 04832
Contextual Info: 2S C D • 023SbüS 0DG4Ô31 G « S I E G T - l S - t f NPN Silicon Planar Transistors BSY34 - SI EMENS A K T I E N 6 E S E L L S C H A F BSY58 BSY 34 and BSY 58 are double diffused epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41 873 . The collectors are electrically connected to the cases.

59c11

Abstract: 200B
Contextual Info: 59C11 1K 5.0V Microwire Serial EEPROM FEATURES PACKAGE TYPES DIP 1 8 V CC CLK 2 7 RDY/BSY DI 3 6 ORG DO 4 5 V SS CS 1 8 V CC CLK 2 7 RDY/BSY DI 3 6 ORG DO 4 5 V SS SOIC 59C11 DESCRIPTION The Microchip Technology Inc. 59C11 is a 1K bit Electrically Erasable PROM. The device is configured as

Contextual Info: RECOMMENDED CIRCUIT for the JEIDA Standard CARDS Ver.4 CARD CONNECTOR RDY Vcc CD1 CD2 /BSY ABOO — ABnn CE2 OE CE1 WE REG •SYSTEM SIDE RESET SIGNAL 3-92 D00 — — D07 D08 - D15 GND

bsy 53

Abstract: BSY54 BSY53 bsy 39 BSY 54
Contextual Info: BSY 53 BSY 54 NPN SILICON TR A N SIS TO R , E P IT A X IA L P L A N A R T R A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L - L F amplification A m p lific a tio n B F - Switching C o m m u ta tio n 75 V v CBO h21E 1S0mA fT 40-120 Case TO-39 — See o u tlin e d ra w in g C B -7 o n last pages

WJ-A70

Abstract: Q193
Contextual Info: Order this document by AR563/D AR563 Active SCSI terminators confront critics and gain acceptance Prepared by: Lance K. Packer operation, SCSI allows no more than 14 lines to be low at once, and the duty cycle of the control lines except BSY is less than 10%. Table 1 shows the possible simultaneous

BSY 34 D

Abstract: BSY34 b1398 BSY58 Q60218-Y34 Q60218-Y58 Z010
Contextual Info: BSY 34, BSY58 NPN RF Transistors for switching applications Transistors B S Y 34 and B S Y 58 are double diffused epitaxial NPN silicon planar transistors in a case 5 C 3 DIN 41873 TO -3 9 . The collector is electrically connected to the case. The transistors are for use as high-speed switches and are particularly for driving

smart flash card pcmcia

Abstract: pcmcia smart modular flash card SMART Modular Technologies flash cards pcmcia PCMCIA pinout
Contextual Info: SERIES II FLASH MEMORY CARD SMART Modular Technologies 68-pin PCMCIA Stan dard 2, 4, 8 & 16 M Bytes Pin Assignm ent No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Signal name GND D3 D4 D5 Do D' c i:r AIO Oli* A ll A9 A8 A!} Al 4 WE'/PGM* RDY/BSY* V(C Vppl Al 6

Contextual Info: Obsolete Device 28LV64A 64K 8K x 8 Low Voltage CMOS EEPROM FEATURES 30 NC 32 Vcc 31 WE 2 RDY/BSY 1 NU 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 15 21 I/O6 14 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7

Contextual Info: Obsolete Device 28C17A 16K 2K x 8 CMOS EEPROM  2004 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10

200B

Abstract: 28C17A DK-2750 RG41
Contextual Info: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7

Contextual Info: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7

28LV64A

Abstract: DK-2750
Contextual Info: Obsolete Device 28LV64A 64K 8K x 8 Low Voltage CMOS EEPROM 30 NC 32 Vcc 31 WE 2 RDY/BSY 1 NU 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6

Contextual Info: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7

28C64A

Abstract: 28C64A-15 28C64A-20 28C64A-25
Contextual Info: Obsolete Device 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13

200B

Abstract: 28LV64A DK-2750 RG41
Contextual Info: 28LV64A 64K 8K x 8 Low Voltage CMOS EEPROM 30 NC 32 Vcc 31 WE 2 RDY/BSY 1 NU 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4

tdb 0139

Abstract: 28LV64A 5060 PLCC A4-A38
Contextual Info: 28LV64A 64K 8K x 8 Low Voltage CMOS EEPROM 30 NC 32 Vcc 31 WE 2 RDY/BSY 1 NU 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4

200B

Abstract: 28LV64A DK-2750 RG41
Contextual Info: 28LV64A 64K 8K x 8 Low Voltage CMOS EEPROM 30 NC 32 Vcc 31 WE 2 RDY/BSY 1 NU 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4