BSS84 PD Search Results

bss84 spice

Abstract: transistor k84 marking code 27a ds30149 BSS84-7-F BSS84 MARKING CODE BSS84 K84 MARKING 2N7002 J-STD-020A
Contextual Info: BSS84 SPICE MODEL: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version A B

BSS84

Abstract: MOSFET P-Channel sot-23
Contextual Info: MOTOROLA Order this document by BSS84/D SEMICONDUCTOR TECHNICAL DATA G r e e n L i n e BSS84 Motorola Preferred Device Low rDS on Sm all-S ignal MOSFETs TMOS Single P-Channel Field Effect Transistors ~M r W TMOS ’ P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

BSS84 PD Motorola

Abstract: BSS84 BSS84 phoenix
Contextual Info: MOTOROLA Order this document by BSS84/D SEMICONDUCTOR TECHNICAL DATA  BSS84 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Motorola Preferred Device P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET 3 DRAIN 3 1 2 1 GATE CASE 318–08, Style 21

BSS110

Abstract: BSS84
Contextual Info: May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

BSS110

Abstract: BSS84
Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

BSS84

Abstract: ROB SOT23 BSS110
Contextual Info: National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

b84 diode

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS84 P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.

A03 transistor

Abstract: marking A03 BSS84 MMBT4401
Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N SOT-363 A Mechanical Data · · · · · Case: SOT-363, Molded Plastic

Contextual Info: BSS84 Small Signal MOSFET P-Channel 3 DRAIN * “G” Lead Pb -Free Features: SOT-23 3 1 *Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out put Capacitance : 10PF *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns GATE 1 2 2 SOURCE Application:

Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industrystandard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES Low On-Resistance 2 Low Gate Threshold Voltage

BSS84 Equivalent

Abstract: 30PF BSS84
Contextual Info: BSS84 Small Signal MOSFET P-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out put Capacitance : 10PF *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns GATE 1 2 2 SOURCE Application: * DC to DC Converter * Cellular & PCMCIA Card

bss110

Abstract: 017adc bss84
Contextual Info: PAIRCHII-D June 1995 M ICDNDUCTQ R tm BSS84/ BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: F /M R C H II-D May 1999 M ICONDUCTQR i BSS84 / BSS110 P -Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

DS30149

Abstract: BSS84 BSS84 Equivalent BSS84Q-7-F BSS84 MARKING CODE
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID V BR DSS RDS(on) max -50V 10Ω @ VGS = -5V TA = 25°C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: MOSFET SMD Type P-Channel Enhancement Mode MOSFET BSS84 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features +0.1 1.3-0.1 +0.1 2.4-0.1 ● ID = -0.13 A 0.4 3 ● VDS V = -50V 1 0.55 ● RDS(ON) ≤ 10Ω (VGS = -5V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1

BS850

Abstract: BSS84 DS11402 SOT23 marking GF
Contextual Info: BS850 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown Surface Mount Package Ideally Suited for Automatic Assembly DISCONTINUED,

BSS8402DW-7-F

Abstract: KNP SOT-363 2N7002 BSS84 BSS8402DW J-STD-020A
Contextual Info: BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODELS: BSS8402DW NEW PRODUCT Features • · · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

FDV305N

Abstract: NDS351AN NDS331N FDN327N supersot-3 FDV301N MOSFET SOT-23 FDV302P MMBF170 rohs FDN335N
Contextual Info: Discrete MOSFET SOT-23 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SOT-23/SuperSOT-3 N-Channel FDN339AN 20 Single - 0.035 0.05 - 7 3 0.5 FDN371N 20 Single - 0.05 0.06

Contextual Info: BSS8402DW COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs one N-channel and one P-channel . It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for

BSS138 NXP

Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Contextual Info: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

B558

Abstract: B55123 BSS84A ZVN3310F ZVN4206E BSS66 BSS67 BSS79B BSS79C FMMT2222
Contextual Info: SOT-23 TRANSISTORS & DIODES SWITCHING TRANSISTORS NPN V cbo Volts Type BSS79B 75 75 B SS79C FMM T2222A 75 FMMT4400 60 60 FMMT4401 60 BSS66 BSS67 60 60 FMMT3903 FMMT3904 60 60 FMMT2222 40 FMMT4123 FMM T4124 30 FMMT2369A 40 40 FMMT2369 BSV52 20 VcEO Volts

BSS8402DWQ-7

Abstract: BSS8402DWQ-13
Contextual Info: BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

codes marking 2N7002

Abstract: SOT-353 MARKING G2 gs 069 LBSS8402DW1T1G 2N7002 MARKING KNP SOT-363 2N7002 BSS84 J-STD-020A SOT-353 MARKING 8v
Contextual Info: LESHAN RADIO COMPANY, LTD. NEW PRODUCT Features • · · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Also Available in Lead Free Version LBSS8402DW1T1G

Contextual Info: BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Device V BR DSS RDS(on) max Q1 Q2 60V -50V 13.5Ω @ VGS = 10V 10Ω @ VGS = -5V ID TA = +25°C 115mA -130mA Description This MOSFET has been designed to minimize the on-state resistance