BSR17 Search Results

1N916

Abstract: BSR17A
Contextual Info: BSR17A BSR17A C E SOT-23 B Mark: U92 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings*

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR17A SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistor Marking

BP317

Abstract: BSR17A BSR18A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR17A NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 02 Philips Semiconductors Product specification NPN switching transistor

Contextual Info: BSR17A SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N silicon transistor Marking BSR17A = U92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

BSR17A

Abstract: MARKING G43
Contextual Info: 7 1 1 0 0 2 b □ D b tì S 43 334 « P H I N BSR17A J v_ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a m icrom iniature plastic envelope intended fo r switching and linear applica­ tions in th ick and th in -film circuits. Q UICK REFERENCE D A T A

J102 transistor

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N silicon transistor Marking BSR17A = U92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2 . 8“ 0.14 0.48 -npio§ 038 0.70 0.50 3 Pin configuration 1 » BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4 1.2 2.4 R0.1 CÖÖ4T

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR17A SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistor Marking BSR17A = U92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

marking U92

Abstract: BSR17A
Contextual Info: L BSR17A SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistor Marking BSR17A = U92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0 .1 4 —^ 0.09 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS C ollector-base voltage open emitter

Contextual Info: D E V E LO P M E N T DATA This data ihaat contains advance Information and specifications are subject to.change without notice. N AriER PHILIPS/1>IS<:RETE . DbE • 1=^53^31 OOlEflflM 3 ■ " \\m BSR174 to 177 r- -L-u -

Contextual Info: Transistors IC SMD Type Product specification BSR17A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 40 V . +0.1 1.3-0.1 +0.1 2.4-0.1 High current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR17A SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistor Marking BSR17A = U92 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

smd transistor marking 54

Abstract: NF marking TRANSISTOR SMD BSR17A marking U92 smd marking rs BSR17
Contextual Info: Transistors IC SMD Type NPN Switching Transistors BSR17A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 40 V . +0.1 1.3-0.1 +0.1 2.4-0.1 High current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

50113G

Abstract: BSR17A dc f 7403
Contextual Info: BSR17A Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " & BSR17A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

Contextual Info: N AMER PHILIPS/DISCRETE DbE D btiSBTBl QDISTSE 1 BSR17 BSR17A -T -3 S - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a microminiature plastic envelope intended for switching and linear applica­ tions in thick and thin-film circuits. QUICK REFERENCE DATA

BSR17A

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistor Marking BSR17A = U92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistor M ark in g P A C K A G E O U T L IN E D E T A IL S BSR17A = U 92 A L L D IM E N S IO N S IN m m 0 .1 4 0.09 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS max. 60 V

u92 surface mount u92 transistor

Abstract: BSR17A BSR17A equivalent
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR17A SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistor Marking BSR17A = U92 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

2N2907a national

Abstract: 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725 2N2904A 2N2905A 2N2907A
Contextual Info: bôE T> m bS 0 1 1 3 G □DB'iSe'i c m NATL S E M I C O N D Devices VtEOtsusti Volts Min NPN (ns) Max mA bpE @ l( Mia mA VcE(sat)@lc& (Volts) Max mA mA *T (MHz) Min Package PD (Amt) (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

Contextual Info: » Discrete POWER & Sig n a l Technologies National S e m i c o n d u c t o r " ' _ V Device No. SOT-23 Mark C ase Style CES V * v v CEO CBO (V) M in „ _ _ _ , Pro E lectro n S u rfa c e M o u n t B ip o la r D ev ic es 1 / 1 CES v y ebo * 1 CBO (V) Min

CS9013

Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
Contextual Info: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction