BSC03 Search Results
BSC03 Datasheets (38)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BSC0302LSATMA1 | Infineon Technologies | MOSFET N-CH 120V 12A/99A TDSON | Original | 1.43MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0303LSATMA1 | Infineon Technologies | TRENCH >=100V PG-TDSON-8 | Original | 1.41MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC030N03LS G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): 4.7 mOhm; ID (max): 100.0 A; | Original | 390.18KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC030N03LSGATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 100A TDSON-8 | Original | 386.62KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC030N03MS G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): 3.8 mOhm; ID (max): 100.0 A; | Original | 296.44KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC030N03MSGATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 100A TDSON-8 | Original | 198.52KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC030N04NS G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; | Original | 387.59KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC030N04NSGATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TDSON-8 | Original | 382.91KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC030N08NS5ATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 100A 8TDSON | Original | 1.18MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC030N10NS5SCATMA1 | Infineon Technologies | TRENCH >=100V | Original | 1.1MB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC030P03NS3 G | Infineon Technologies | P-Channel MOSFETs; Package: PG-TDSON-8; Package: SuperSO8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -; | Original | 309.56KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC030P03NS3GAUMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 100A TDSON-8 | Original | 550.36KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC031N06NS3 G | Infineon Technologies | N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; | Original | 327.98KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC031N06NS3GATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 100A TDSON-8 | Original | 586.81KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC032N03S | Infineon Technologies | TRANS MOSFET N-CH 30V 50A 8P-TDSON-8 | Original | 265.13KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC032N03S | Infineon Technologies | OptiMOS2 Power-Transistor | Original | 302.14KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC032N03SG | Infineon Technologies | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 100A TDSON-8 | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC032N03S G | Infineon Technologies | TRANS MOSFET N-CH 30V 23A 8TDSON-8 | Original | 313.3KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC032N04LSATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 21A 8TDSON | Original | 1.41MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC032NE2LS | Infineon Technologies | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 22A TDSON-8 | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC03 Price and Stock
OMRON Industrial Automation CPM2BSC032CUSTOM CPM2B CPU |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CPM2BSC032 |
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Infineon Technologies AG BSC032NE2LSATMA1Trans MOSFET N-CH 25V 22A 8-Pin TDSON EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC032NE2LSATMA1 | 14,363 | 1,188 |
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Buy Now | ||||||
| BSC032NE2LSATMA1 | 10,000 | 22 |
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Buy Now | |||||||
| BSC032NE2LSATMA1 | 10,000 | 5,000 |
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Buy Now | |||||||
| BSC032NE2LSATMA1 | 10,000 | 5,000 |
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| BSC032NE2LSATMA1 | 4,344 | 5 |
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| BSC032NE2LSATMA1 | 1,993 | 1,188 |
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BSC032NE2LSATMA1 | 10,000 | 52 Weeks | 5,000 |
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Buy Now | |||||
| BSC032NE2LSATMA1 | 10,000 | 1 |
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Buy Now | |||||||
| BSC032NE2LSATMA1 | 10,000 | 52 Weeks | 5,000 |
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Buy Now | ||||||
| BSC032NE2LSATMA1 | Cut Strips | 4,344 | 52 Weeks | 1 |
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Buy Now | |||||
| BSC032NE2LSATMA1 | Cut Strips | 963 | 52 Weeks | 1 |
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BSC032NE2LSATMA1 | Cut Tape | 3,037 | 1 |
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| BSC032NE2LSATMA1 | Tape & Reel | 3,037 | 100 |
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BSC032NE2LSATMA1 | 16,356 | 1 |
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BSC032NE2LSATMA1 | 10,000 | 53 Weeks | 5,000 |
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Infineon Technologies AG BSC034N06NSTrans MOSFET N-CH 60V 112A 8-Pin TDSON T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC034N06NS | 5,000 | 54 |
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Buy Now | ||||||
Infineon Technologies AG BSC034N10LS5BSC034N10LS5 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC034N10LS5 | 5,000 | 21 |
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Buy Now | ||||||
Infineon Technologies AG BSC036NE7NS3GTrans MOSFET N-CH 75V 20A 8-Pin TDSON EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSC036NE7NS3G | 4,992 | 22 |
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BSC036NE7NS3G | 3,993 |
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| BSC036NE7NS3G | 28 |
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BSC03 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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32n03
Abstract: 32N03S BSC032N03S JESD22
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bsc032n03sq67042-s421932n03s32n03+1 | |
039N06NS
Abstract: marking NC
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bsc039n06nsiec61249-2-21039n06ns50k/w+1 | |
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Contextual Info: n-Channel Power MOSFET OptiMOS BSC032NE2LS Data Sheet 2.0, 2011-03-01 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSC032NE2LS 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together |
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bsc032ne2ls | |
035N04LSContextual Info: BSC035N04LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.5 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel |
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bsc035n04ls035n04ls | |
030N03lsContextual Info: BSC030N03LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 3 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel |
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bsc030n03ls030n03ls | |
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Contextual Info: BSC032N04LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance SMPS, e.g. sync. rec. • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 40 V RDS(on),max 3.2 mW ID 98 |
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bsc032n04lsiec61249-2-21032n04ls | |
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Contextual Info: BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • 100% avalanche tested |
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bsc030n03msiec61249-2-21030n03ms | |
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Contextual Info: BSC034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS on ,max 3.4 mW • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level |
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bsc034n03lsiec61249-2-21bsc034n03lsc034n03ls | |
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Contextual Info: BSC032NE2LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 25 V RDS(on),max 3.2 mW ID 84 A QOSS |
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bsc032ne2lsiec61249-2-21032ne2ls | |
32N03
Abstract: 32n03s BSC032N03S BSC032N03S G fet 5080 JESD22
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bsc032n03sq67042-s421932n03s32n03+3 | |
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Contextual Info: BSC037N03MSC G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3.7 mΩ V GS=4.5 V 4.8 |
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bsc037n03msciec61249-2-21037n03ms | |
BSC030P03NS3
Abstract: 030P3NS
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bsc030p03ns3030p3ns | |
BSC030N04NS
Abstract: IEC61249-2-21 JESD22 030N04NS
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bsc030n04nsiec61249-2-21030n04nsjesd22 | |
030N03MS
Abstract: 030N03 BSC030N03MS IEC61249-2-21 JESD22
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bsc030n03msiec61249-2-21030n03ms030n03+1 | |
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Contextual Info: BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • N-channel |
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bsc030n03ms030n03ms | |
030N03MS
Abstract: BSC030N03MS JESD22 BSC030N03MS G 030N03 GS2575
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bsc030n03ms030n03msjesd22bsc030n03ms g+2 | |
030N04NS
Abstract: FET 4900 BSC030N04NS JESD22 PG-TDSON-8 BSC030N04NS G D49 MARKING
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bsc030n04ns030n04nsfet 4900jesd22+3 | |
030P3NS
Abstract: IEC61249-2-21 JESD22 JESD22-A114 BSC030P03NS3
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bsc030p03ns3iec61249-2-21030p3nsjesd22+1 | |
031n06nsContextual Info: Type BSC031N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 3.1 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM) |
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bsc031n06ns3031n06ns | |
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Contextual Info: BSC034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS on ,max 3.4 mW • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level |
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bsc034n03lsiec61249-2-21bsc034n03lsc034n03ls | |
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Contextual Info: BSC035N04LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.5 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications PG-TDSON-8 |
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bsc035n04lsiec61249-2-21035n04ls | |
039N06NS
Abstract: BSC039N06NS NC100A
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bsc039n06nsiec61249-2-21039n06ns50k/w+1 | |
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Contextual Info: BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • N-channel |
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bsc030n03ms030n03ms | |
30N03LSContextual Info: BSC030N03LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 3 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel |
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bsc030n03ls30n03ls | |