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    BSC03 Search Results

    BSC03 Datasheets (38)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BSC0302LSATMA1
    Infineon Technologies MOSFET N-CH 120V 12A/99A TDSON Original PDF 1.43MB
    BSC0303LSATMA1
    Infineon Technologies TRENCH >=100V PG-TDSON-8 Original PDF 1.41MB
    BSC030N03LS G
    Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): 4.7 mOhm; ID (max): 100.0 A; Original PDF 390.18KB 10
    BSC030N03LSGATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 100A TDSON-8 Original PDF 386.62KB
    BSC030N03MS G
    Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): 3.8 mOhm; ID (max): 100.0 A; Original PDF 296.44KB 10
    BSC030N03MSGATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 100A TDSON-8 Original PDF 198.52KB
    BSC030N04NS G
    Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; Original PDF 387.59KB 10
    BSC030N04NSGATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 100A TDSON-8 Original PDF 382.91KB
    BSC030N08NS5ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 100A 8TDSON Original PDF 1.18MB
    BSC030N10NS5SCATMA1
    Infineon Technologies TRENCH >=100V Original PDF 1.1MB 11
    BSC030P03NS3 G
    Infineon Technologies P-Channel MOSFETs; Package: PG-TDSON-8; Package: SuperSO8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) (@4.5V): -; RDS (on) (max) (@2.5V): -; Original PDF 309.56KB 9
    BSC030P03NS3GAUMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 100A TDSON-8 Original PDF 550.36KB
    BSC031N06NS3 G
    Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3.1 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; Original PDF 327.98KB 9
    BSC031N06NS3GATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 100A TDSON-8 Original PDF 586.81KB
    BSC032N03S
    Infineon Technologies TRANS MOSFET N-CH 30V 50A 8P-TDSON-8 Original PDF 265.13KB 10
    BSC032N03S
    Infineon Technologies OptiMOS2 Power-Transistor Original PDF 302.14KB 10
    BSC032N03SG
    Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 100A TDSON-8 Original PDF 10
    BSC032N03S G
    Infineon Technologies TRANS MOSFET N-CH 30V 23A 8TDSON-8 Original PDF 313.3KB 10
    BSC032N04LSATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 21A 8TDSON Original PDF 1.41MB
    BSC032NE2LS
    Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 22A TDSON-8 Original PDF 10
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    BSC03 Price and Stock

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    OMRON Industrial Automation CPM2BSC032

    CUSTOM CPM2B CPU
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    Master Electronics CPM2BSC032
    • 1 $1569.45
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    Infineon Technologies AG BSC032NE2LSATMA1

    Trans MOSFET N-CH 25V 22A 8-Pin TDSON EP T/R
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    Verical () BSC032NE2LSATMA1 14,363 1,188
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    BSC032NE2LSATMA1 10,000 22
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    BSC032NE2LSATMA1 10,000 5,000
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    BSC032NE2LSATMA1 10,000 5,000
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    BSC032NE2LSATMA1 4,344 5
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    BSC032NE2LSATMA1 1,993 1,188
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    Arrow Electronics () BSC032NE2LSATMA1 10,000 52 Weeks 5,000
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    BSC032NE2LSATMA1 10,000 1
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    BSC032NE2LSATMA1 10,000 52 Weeks 5,000
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    BSC032NE2LSATMA1 Cut Strips 4,344 52 Weeks 1
    • 1 $1.08
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    BSC032NE2LSATMA1 Cut Strips 963 52 Weeks 1
    • 1 $0.30
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    Newark () BSC032NE2LSATMA1 Cut Tape 3,037 1
    • 1 $1.16
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    BSC032NE2LSATMA1 Tape & Reel 3,037 100
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    Rochester Electronics BSC032NE2LSATMA1 16,356 1
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    EBV Elektronik BSC032NE2LSATMA1 10,000 53 Weeks 5,000
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    Infineon Technologies AG BSC034N06NS

    Trans MOSFET N-CH 60V 112A 8-Pin TDSON T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical BSC034N06NS 5,000 54
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    • 100 $1.53
    • 1000 $1.37
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    Infineon Technologies AG BSC034N10LS5

    BSC034N10LS5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical BSC034N10LS5 5,000 21
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    • 100 $3.48
    • 1000 $3.20
    • 10000 $3.07
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    Infineon Technologies AG BSC036NE7NS3G

    Trans MOSFET N-CH 75V 20A 8-Pin TDSON EP T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical BSC036NE7NS3G 4,992 22
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    • 100 $3.33
    • 1000 $3.06
    • 10000 $2.99
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    Quest Components () BSC036NE7NS3G 3,993
    • 1 $6.69
    • 10 $6.69
    • 100 $6.69
    • 1000 $3.34
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    BSC036NE7NS3G 28
    • 1 $3.81
    • 10 $2.38
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    BSC03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    32n03

    Abstract: 32N03S BSC032N03S JESD22
    Contextual Info: BSC032N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 50 A 1 • Qualified according to JEDEC for target applications • N-channel


    Original
    bsc032n03sq67042-s421932n03s32n03+1jesd22 PDF

    039N06NS

    Abstract: marking NC
    Contextual Info: Type BSC039N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original
    bsc039n06nsiec61249-2-21039n06ns50k/w+1marking nc PDF

    Contextual Info: n-Channel Power MOSFET OptiMOS BSC032NE2LS Data Sheet 2.0, 2011-03-01 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSC032NE2LS 1 Description OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together


    Original
    bsc032ne2ls PDF

    035N04LS

    Contextual Info: BSC035N04LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.5 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original
    bsc035n04ls035n04ls PDF

    030N03ls

    Contextual Info: BSC030N03LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 3 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original
    bsc030n03ls030n03ls PDF

    Contextual Info: BSC032N04LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance SMPS, e.g. sync. rec. • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 40 V RDS(on),max 3.2 mW ID 98


    Original
    bsc032n04lsiec61249-2-21032n04ls PDF

    Contextual Info: BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • 100% avalanche tested


    Original
    bsc030n03msiec61249-2-21030n03ms PDF

    Contextual Info: BSC034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS on ,max 3.4 mW • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original
    bsc034n03lsiec61249-2-21bsc034n03lsc034n03ls PDF

    Contextual Info: BSC032NE2LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for high performance Buck converter • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 25 V RDS(on),max 3.2 mW ID 84 A QOSS


    Original
    bsc032ne2lsiec61249-2-21032ne2ls PDF

    32N03

    Abstract: 32n03s BSC032N03S BSC032N03S G fet 5080 JESD22
    Contextual Info: BSC032N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 50 A 1 • Qualified according to JEDEC for target applications • N-channel


    Original
    bsc032n03sq67042-s421932n03s32n03+3bsc032n03s gfet 5080jesd22 PDF

    Contextual Info: BSC037N03MSC G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3.7 mΩ V GS=4.5 V 4.8


    Original
    bsc037n03msciec61249-2-21037n03ms PDF

    BSC030P03NS3

    Abstract: 030P3NS
    Contextual Info: BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 3.0 mΩ ID -100 A • V GS=25 V, specially suited for notebook applications


    Original
    bsc030p03ns3030p3ns PDF

    BSC030N04NS

    Abstract: IEC61249-2-21 JESD22 030N04NS
    Contextual Info: BSC030N04NS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 3.0 mΩ • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original
    bsc030n04nsiec61249-2-21030n04nsjesd22 PDF

    030N03MS

    Abstract: 030N03 BSC030N03MS IEC61249-2-21 JESD22
    Contextual Info: BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • 100% avalanche tested


    Original
    bsc030n03msiec61249-2-21030n03ms030n03+1jesd22 PDF

    Contextual Info: BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • N-channel


    Original
    bsc030n03ms030n03ms PDF

    030N03MS

    Abstract: BSC030N03MS JESD22 BSC030N03MS G 030N03 GS2575
    Contextual Info: BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • N-channel


    Original
    bsc030n03ms030n03msjesd22bsc030n03ms g+2030n03gs2575 PDF

    030N04NS

    Abstract: FET 4900 BSC030N04NS JESD22 PG-TDSON-8 BSC030N04NS G D49 MARKING
    Contextual Info: BSC030N04NS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.0 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original
    bsc030n04ns030n04nsfet 4900jesd22+3pg-tdson-8bsc030n04ns gd49 marking PDF

    030P3NS

    Abstract: IEC61249-2-21 JESD22 JESD22-A114 BSC030P03NS3
    Contextual Info: BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 3.0 mΩ ID -100 • V GS=25 V, specially suited for notebook applications


    Original
    bsc030p03ns3iec61249-2-21030p3nsjesd22+1jesd22-a114 PDF

    031n06ns

    Contextual Info: Type BSC031N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 3.1 mΩ ID 100 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    bsc031n06ns3031n06ns PDF

    Contextual Info: BSC034N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V • Fast switching MOSFET for SMPS RDS on ,max 3.4 mW • Optimized technology for DC/DC converters ID 100 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original
    bsc034n03lsiec61249-2-21bsc034n03lsc034n03ls PDF

    Contextual Info: BSC035N04LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.5 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications PG-TDSON-8


    Original
    bsc035n04lsiec61249-2-21035n04ls PDF

    039N06NS

    Abstract: BSC039N06NS NC100A
    Contextual Info: Type BSC039N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 3.9 mW • Superior thermal resistance ID 100 A • N-channel 1) • Qualified according to JEDEC for target applications


    Original
    bsc039n06nsiec61249-2-21039n06ns50k/w+1nc100a PDF

    Contextual Info: BSC030N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 3 mΩ V GS=4.5 V 3.8 ID • N-channel


    Original
    bsc030n03ms030n03ms PDF

    30N03LS

    Contextual Info: BSC030N03LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 30 V R DS on ,max 3 mΩ ID 100 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original
    bsc030n03ls30n03ls PDF