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    039N06NS Search Results

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    Infineon Technologies AG BSZ039N06NSATMA1

    MOSFET N-CH 60V 18A/40A TSDSON
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    DigiKey () BSZ039N06NSATMA1 Digi-Reel 59
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    BSZ039N06NSATMA1 Tape & Reel 59
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    BSZ039N06NSATMA1 Cut Tape 59 1
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    Newark () BSZ039N06NSATMA1 Tape & Reel 100
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    TME BSZ039N06NSATMA1 5,000
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    Infineon Technologies AG BSC039N06NSATMA1

    MOSFET N-CH 60V 19A/100A TDSON
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    DigiKey () BSC039N06NSATMA1 Digi-Reel 1
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    BSC039N06NSATMA1 Tape & Reel 5,000
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    Mouser Electronics BSC039N06NSATMA1 8
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    Newark () BSC039N06NSATMA1 Cut Tape 11,126 1
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    BSC039N06NSATMA1 Tape & Reel 11,126 100
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    BSC039N06NSATMA1 Tape & Reel 5,000
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    Rochester Electronics BSC039N06NSATMA1 55,499 1
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    EBV Elektronik BSC039N06NSATMA1 53 Weeks 5,000
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    Win Source Electronics BSC039N06NSATMA1 26,460
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    Infineon Technologies AG BSC039N06NS

    MOSFETs N-Ch 60V 100A TDSON-8
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    Mouser Electronics BSC039N06NS
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    RS BSC039N06NS Bulk 2 Weeks 10
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    TME BSC039N06NS 1
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    Win Source Electronics BSC039N06NS 20,000
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    VBsemi Electronics Co Ltd BSC039N06NS-VB

    MOSFETs; BSC039N06NS-VB; VBSEMI
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    Maritex BSC039N06NS-VB 20 5
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    039N06NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    039N06NS

    Abstract: marking NC
    Contextual Info: Type 039N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original
    BSC039N06NS IEC61249-2-21 039N06NS 50K/W 039N06NS marking NC PDF

    039N06NS

    Abstract: BSC039N06NS NC100A
    Contextual Info: Type 039N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 3.9 mW • Superior thermal resistance ID 100 A • N-channel 1) • Qualified according to JEDEC for target applications


    Original
    BSC039N06NS IEC61249-2-21 039N06NS 50K/W 039N06NS BSC039N06NS NC100A PDF

    Contextual Info: Type 039N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 3.9 mW • Superior thermal resistance ID 100 A • N-channel • Qualified according to JEDEC for target applications


    Original
    BSC039N06NS IEC61249-2-21 039N06NS PDF