BS616UV1010 Search Results

Contextual Info: Ultra Low Power CMOS SRAM 64K X 16 bit BS616UV1010 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 100ns

BGA-48-0608

Abstract: BS616UV1010 BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI TSOP2-44
Contextual Info: Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010 BSI „ DESCRIPTION „ FEATURES The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage.

BGA-48-0608

Abstract: BS616UV1010 BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI TSOP2-44
Contextual Info: Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010 BSI „ DESCRIPTION „ FEATURES • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade : 10mA Max. operating current I- grade : 15mA (Max.) operating current

TSOP2-44

Contextual Info: Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010 BSI „ DESCRIPTION „ FEATURES The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage.

Contextual Info: Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BSI BS616UV1010 n FEATURES n DESCRIPTION Ÿ Ultra low VCC operation voltage : 1.9V ~ 3.6V Ÿ Very low power consumption : VCC = 2.0V 10mA Max. operating current 0.01uA (Typ.) CMOS standby current VCC = 3.0V 18mA(Max.) operating current

BGA-48-0608

Abstract: BS616UV1010 BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI
Contextual Info: Ultra Low Power CMOS SRAM 64K X 16 bit BS616UV1010 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.9V ~ 3.6V y Ultra low power consumption : Operation current : 15mA Max. at 100ns

BS616UV1010

Abstract: BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI
Contextual Info: Ultra Low Power CMOS SRAM 64K X 16 bit BS616UV1010 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 100ns

BS62LV256-70

Abstract: M5M5408 BS62UV256-15 M5M5408B-55 t0808
Contextual Info: Package Descriptions PC / PI = PDIP SRAM CROSS REFERENCE 7700 Irvine Center Dr. STE: 420 SC / SI = SOP Irvine, CA 92618 Contact: TC / TI = TSOP Lena Patel STC / STI = STSOP BC / BI = BGA 8 x 10 email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277

am29f010b-70ef

Abstract: A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference
Contextual Info: Cross Reference Memory IC's and More www.amictechnology.com part number AMIC part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29F002B AM29F002BB-120JF AM29F002BB-55JD AM29F002BB-90EI

TC554161A

Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

TC55VEM416AXBN

Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

um61256

Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
Contextual Info: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D

um61256

Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
Contextual Info: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010

um61256

Abstract: PM25LV040 SST25LF040B Pm25LV016 PM25LV010A PM25LV080 SST25LF512A HY514264 M5M418 hynix hy57v281620
Contextual Info: Cross Reference Your Memory Supplier part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B