BS616UV1010EC Search Results

BS616UV1010EC Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BS616UV1010EC		Brilliance Semiconductor	Ultra Low Power/Voltage CMOS SRAM 64K x 16 bit	Original	PDF	218.14KB	10
BS616UV1010EC-15		Brilliance Semiconductor	Ultra Low Power/Voltage CMOS SRAM	Original	PDF	448.1KB	10

BS616UV1010EC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Ultra Low Power CMOS SRAM 64K X 16 bit BS616UV1010 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 100ns	Original	BS616UV1010 100ns x8/x16 -25oC BGA-48-0608 II-44 R0201-BS616UV1010	PDF
BGA-48-0608 Abstract: BS616UV1010 BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI TSOP2-44 Contextual Info: Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010 BSI DESCRIPTION FEATURES The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage.	Original	BS616UV1010 BS616UV1010 150ns R0201-BS616UV1010 150ns -40oC BGA-48 BGA-48-0608 BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI TSOP2-44	PDF
BGA-48-0608 Abstract: BS616UV1010 BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI TSOP2-44 Contextual Info: Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010 BSI DESCRIPTION FEATURES • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade : 10mA Max. operating current I- grade : 15mA (Max.) operating current	Original	BS616UV1010 150ns Configu40oC BGA-48 TSOP2-44 R0201-BS616UV1010 BGA-48-0608 BS616UV1010 BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI TSOP2-44	PDF
TSOP2-44 Contextual Info: Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BS616UV1010 BSI DESCRIPTION FEATURES The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage.	Original	BS616UV1010 BS616UV1010 150ns TSOP2-44 R0201-BS616UV1010 TSOP2-44	PDF
Contextual Info: Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BSI BS616UV1010 n FEATURES n DESCRIPTION Ÿ Ultra low VCC operation voltage : 1.9V ~ 3.6V Ÿ Very low power consumption : VCC = 2.0V 10mA Max. operating current 0.01uA (Typ.) CMOS standby current VCC = 3.0V 18mA(Max.) operating current	Original	BS616UV1010 100ns x8/x16 BS616UV1010 TSOP2-44 R0201-BS616UV1010	PDF
BGA-48-0608 Abstract: BS616UV1010 BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI Contextual Info: Ultra Low Power CMOS SRAM 64K X 16 bit BS616UV1010 Pb-Free and Green package materials are compliant to RoHS FEATURES DESCRIPTION y Wide VCC low operation voltage : 1.9V ~ 3.6V y Ultra low power consumption : Operation current : 15mA Max. at 100ns	Original	BS616UV1010 100ns x8/x16 R0201-BS616UV1010 BGA-48-0608 BS616UV1010 BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI	PDF
BS616UV1010 Abstract: BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI Contextual Info: Ultra Low Power CMOS SRAM 64K X 16 bit BS616UV1010 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC low operation voltage : 1.9V ~ 3.6V Ÿ Ultra low power consumption : VCC = 2.0V Operation current : 15mA Max. at 100ns	Original	BS616UV1010 100ns x8/x16 supplyR0201-BS616UV1010 R0201-BS616UV1010 BS616UV1010 BS616UV1010AC BS616UV1010AI BS616UV1010EC BS616UV1010EI	PDF