BSTB0246
Abstract: BT100A BSTC0540 BSTB0226 bt 2328 BTW 600 BT106A BS9-04A 27-600R TAG106D
Contextual Info: MANUFACTURERS T E C H N IC A L DATA SHOULD TAG nearest Equivalent Type TAG nearest Equivalent Type AA AA AA AA AA 107 108 109 110 111 2N 2N 2N 2N 2N BRX BRY BRY BRY BRY 66 54-100 54-200 54-300 54-400 BRX TAG TAG TAG TAG 66 611-100 611-200 611-300 611-400 AA
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OCR Scan
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55-500M
55-600M
55-700M
55-800M
2-800RU
92-1000RM
92-1000RU
16N-400DM
16N-400DU
16N-600DM
BSTB0246
BT100A
BSTC0540
BSTB0226
bt 2328
BTW 600
BT106A
BS9-04A
27-600R
TAG106D
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TY6008
Abstract: TSM 4005 A 6005 F 6005 FAST SWITCHING THYRISTORS TY6008FA BRY 55 200 TY6005F BTX 25 800 TYF6008A 49400
Contextual Info: fast switching thyristors < 100 Arms thyristors rapides < 100 Aeff T1H0MS0N-CSF Tamb - 25°C Type •o Vr r m ■ tsm 10 ms V d RNI A 0,8 A r m s / T c a S e = 2 5 ° C BRY BRY BRY BRY 55 55 55 55 S- 30 S- 60 S-100 S-200 0,52 5 A r m s / T ^ a se = 7 5 ° C
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OCR Scan
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s-100
s-200
wf139b
TY6008
TSM 4005 A
6005 F
6005 FAST SWITCHING THYRISTORS
TY6008FA
BRY 55 200
TY6005F
BTX 25 800
TYF6008A
49400
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transistor Siemens 14 S S 92
Abstract: 2sc 3150 transistor BRY 56 C Bry 56 BRY 66 A BRY 56 B
Contextual Info: ESC D • fl23StiQS 0004773 1 MS I E G , Programmable Unijunction Transistor BRY 56 7” ^ o f SIEMENS AKTIENGESELLSCHAF Programmable silicon planar unijunction transistor in TO 92 plastic package 10 A 3 DIN 41868 . K8max Type Ordering code BRY561» BRY 56 A
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OCR Scan
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fl23StiQS
BRY561»
Q68000-A803
Q68000-A803-S1
Q68000-A803-S2
Q68000-A803-S3
23SbGS
02BStaQS
GG04777
BRY56
transistor Siemens 14 S S 92
2sc 3150 transistor
BRY 56 C
Bry 56
BRY 66 A
BRY 56 B
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BRY 41
Abstract: BRY21 SIEMENS FAST THYRISTOR Tetrode pnpn
Contextual Info: ISIEG ESC D • Ö235b05 G0Q47b7 b PNPN Thyristor Tetrode BRY21 SIEMENS AKTIENGESELLSCHAF The BRY 21 is an extinguishable PNPN silicon planar thyristortetrode in T 0 12 case 5 C 4 DIN 41 873 . The anode gate (Ga ) is electrically connected to the case. The BRY 21 is particularly
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OCR Scan
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235b05
G0Q47b7
BRY21
Q62702-R81
BRY 41
BRY21
SIEMENS FAST THYRISTOR
Tetrode pnpn
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SIEMENS THYRISTOR BRY 20
Abstract: 7809A SIEMENS thyristor BRY 300 BRY20 SIEMENS FAST THYRISTOR
Contextual Info: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga ) is electrically connected to the case. The BRY 20 is particularly
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OCR Scan
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fl23SbaS
Q0047b3Jj
BRY20
Q60217-Y20
100mA
SIEMENS THYRISTOR BRY 20
7809A
SIEMENS thyristor
BRY 300
BRY20
SIEMENS FAST THYRISTOR
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BRY20
Abstract: SIEMENS THYRISTOR SIEMENS THYRISTOR BRY 20 Q60217-Y20 200 hn PNPN SIEMENS FAST THYRISTOR
Contextual Info: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga) is electrically connected to the case. The BRY 20 is particularly
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OCR Scan
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000H7b3
BRY20
Q60217-Y20
BRY20
SIEMENS THYRISTOR
SIEMENS THYRISTOR BRY 20
Q60217-Y20
200 hn
PNPN
SIEMENS FAST THYRISTOR
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BRY20
Abstract: Thyristor 40V 120A L-13 Q60217-Y20 BRY 41
Contextual Info: BRY20 PN PN-Thyristor The BRY 20 is an extinguishable silicon PNPN planar th yristo r-te tro d e in a case 5 C 4 DIN 41 873 T O -1 2 . The anode gate (G A) is electrically connected to the case. The BRY 20 is particularly suitable fo r use as a medium fast sw itch.
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OCR Scan
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BRY20
Q60217-Y20
10ltlA_
BRY20
Thyristor 40V 120A
L-13
BRY 41
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BRY21
Abstract: BRY20 BRY 41 Q60217-Y20 120AB
Contextual Info: Strömen gesteuert werden als über das Anodentor z. B. BRY 20 . Wird die Spannung zwischen Anode und Kathode bei ausgeschalteter Thyristor-Tetrode plötzlich erhöht, so kann der durch den steilen Spannungsanstieg an der mittleren Sperrschichtkapazität erzeugte Verschiebungs
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OCR Scan
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BRY20)
BRY21
BRY20
BRY 41
Q60217-Y20
120AB
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BRY20
Abstract: BRY 41 BRY 21 BRY21 40300G Q62702-R81
Contextual Info: Strömen gesteuert werden als über das Anodentor z. B. BRY 20 . Wird die Spannung zwischen Anode und Kathode bei ausgeschalteter Thyristor-Tetrode plötzlich erhöht, so kann der durch den steilen Spannungsanstieg an der mittleren Sperrschichtkapazität erzeugte Verschiebungs
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OCR Scan
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BRY20)
BRY20
BRY 41
BRY 21
BRY21
40300G
Q62702-R81
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transistor Siemens 14 S S 92
Abstract: CBV2 BRY56 Q68000-A803 Q68000-A803-S1 Q68000-A803-S3 IW transistor BRY 56 A Programmable unijunction D 823 transistor
Contextual Info: ESC D • 023StiOS 0004773 1 M S Ï E G , Programmable Unijunction Transistor BRY 56 T -3 - ^ - o f SIEMENS AKTIEN6ESELLSCHAF Programmable silicon planar unijunction transistor in TO 9 2 plastic package 10 A 3 DIN 4 1 8 6 8 . H8m ax Type O rdering cod e
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OCR Scan
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23SlaOS
BRY561'
Q68000-A803
Q68000-A803-S1
068000-A803-S2
Q68000-A803-S3
DQ04777
BRY56
transistor Siemens 14 S S 92
CBV2
BRY56
Q68000-A803
Q68000-A803-S1
Q68000-A803-S3
IW transistor
BRY 56 A
Programmable unijunction
D 823 transistor
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bry46
Abstract: thyristors BRY 300 TO64 package BRY 55 A TO-64 BRY 46 bry44 TO-64 weight TO64
Contextual Info: Thyristors T h y ris to rs BRY Series in special lo w -lin e tab package for consumer applications. CRS 1 Series in TO -5 case. CRS 3 Series in TO -64 stud-m ounted case » M 5 Type M axim um Ratings C haracteristics at T j= 2 5 °C C ontinuous forw ard
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OCR Scan
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PDF
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BRY21
Abstract: BRY 21 thyristor igc
Contextual Info: BRY21 PN PN-Thyristor P re lim in a ry d a ta BRY21 is an extinguishable PNPN silicon planar thyristor tetrode in a case 5 C 4 DIN 41873 TO -12 . The anode gate (GA) is electrically connected to the case. The thyristor tetrode BRY 21 is particularly designed for use as a switch of medium
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OCR Scan
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BRY21
BRY21
Q62702-R81
BRY 21
thyristor igc
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BRY 300
Abstract: BRY 100 BRY 55 200 BRY 55 A HS 817 VDR Siemens BRy55 siemens thyristors bry65 BRY 21
Contextual Info: 2SC D • flSBSbQS QQQ47bR T ■ S I E 6 r . 1 C3L U t lO T a -fZ _ . 2 o -// Silicon Miniature Thyristors ~ BRY 55/30. - S I E M E N S A K T IE N G E S E L L S C H A F _BRY SS/3_00 These diffused silicon thyristors in TO 92 plastic package 10 A 3 DIN 41868} are
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OCR Scan
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QQQ47bR
Q68000-A114-F10
Q68000-A183-F10
Q68000-A184-F10
Q68000-A520-F10
Q68000-A185-F10
50to400H2
126iC
623SbOS
BRY 300
BRY 100
BRY 55 200
BRY 55 A
HS 817
VDR Siemens
BRy55
siemens thyristors
bry65
BRY 21
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TRIAC TAG 280 600
Abstract: TAG 6 600 BT100A 27-600R BSTB0246 TRIAC TAG 626 400 TRIAC TAG 92 TRIAC btw 92 triac TAG bstb0226
Contextual Info: flffli] TR IA C IN METAL AND PLASTIC PACKAGE ^ y TC-220AB TO-66 o ij a r~\ n k ic in i i*j 12 A A RMS A NEW 30V 5 OV V k TAG TAB ! 1 DMC SALES TAG 240 IS O LA TED TYPE 241 P A D ESIG N ATIO N TAG 1Ç DMQ A PMC. FOR 245 TAG 246 IO 0V T A G 2 6 0 - 1 00 TAG261-100
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OCR Scan
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O-220AB
TAG260-100
TAG261-100
TAG265-1
TAG266-1
TAG420-100
TAG425-100
TAG426-100
TAG260-200
TAG261-200
TRIAC TAG 280 600
TAG 6 600
BT100A
27-600R
BSTB0246
TRIAC TAG 626 400
TRIAC TAG 92
TRIAC btw 92
triac TAG
bstb0226
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scr 106d
Abstract: SCR bt 107 27-600R C 106D scr scr tag 12 BS9-04A tag br 203 BT106A TAG 92 bstb0226
Contextual Info: f l ✓ SCR IN METAL PACKAGE TO -3 9 T O - 18 0 ,6 A 15V 2N876 2N884 30V 2N877 2N 8 8 5 0 ,8 A RMS 2N3001 2N3005 TAG 0 ,8 A RMS 06Y BR 203 50V v v DRM RRM B L O C K IN G V O LT A G E 60V 2N878 2N886 2N3002 2N 3006 TAG 0 6 Y Y 100V 2N879 2N 887 2N 3 0 0 3 2N 3007
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OCR Scan
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to-18
2n876
2n884
2n877
2n885
2n3001
2n3005
2nw121
tag520f
tag521f
scr 106d
SCR bt 107
27-600R
C 106D scr
scr tag 12
BS9-04A
tag br 203
BT106A
TAG 92
bstb0226
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PDF
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Thomson Semiconductors BRY-54200
Abstract: 54100 la 78140 54-100 thomson scr 54200 698866F
Contextual Info: = 3 A / T c = 85°C IT < R M S Genera! purpose SCR suited fo r power supplies up to 400 Hz on resistive or inductive loads. • VDRM = VR R M U pto600V. • Glass passivated chips. • VDRM . < 600 V 100 V < VRBM High stability and reliability. Thyristors à usage général pour des alimentations jusqu'à
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OCR Scan
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VRRMUpto600V.
Thomson Semiconductors BRY-54200
54100
la 78140
54-100
thomson scr
54200
698866F
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PDF
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BRY 300
Abstract: 2N thyristor tls 106-6 BRY55 TD6001S 2N877 2N878 2N879 2N880 BRY 55-200
Contextual Info: o THOMSON-CSF sensitive gate thyristor selector guide guide de sélection thyristors sensibles 175 sensitive gate thyristors thyristors sensibles THOMSON-CSF dv/dt Tam b = 25°C Types •RM @ V r r m V r r m ■t s m ■d m @ V d r m V q t Tj max 10 ms ■o
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OCR Scan
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BRY55.
BRY55M.
tls107.
CB-971
ICB-2741
BRY 300
2N thyristor
tls 106-6
BRY55
TD6001S
2N877
2N878
2N879
2N880
BRY 55-200
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TY6004
Abstract: TY504 TYN 6004 TYN 125 tyn 5 BRY 300 TY 6004 tyn 604 n TYN604 TL4006
Contextual Info: thyristors < 80 Arms thyristors < 80 A eff THOMSON-CSF Tam b = 25 ° C Types T L 1003 T L 2003 T L 4003 T L 6003 T L 8003 •o Vrrm = V D RM ■t s m 10 m s ■rm @ v r r m ■dm @ V d r m Tj m ax A (V) (A) m ax (m A) 1 100 200 400 600 800 70 2 dv/dt @ 67% V d r iv i
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OCR Scan
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TL1003
CB-274I
TY6004
TY504
-TY6004
TY504
TYN 6004
TYN 125
tyn 5
BRY 300
TY 6004
tyn 604 n
TYN604
TL4006
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PDF
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BRY 300
Abstract: BRY 55 A BRY 55 200 bry 55 2N883 BRY 100 2N877 2N878 TD5001 2N880
Contextual Info: sensitive gate thyristors thyristors sensibles THOMSON-CSF dv/dt Tam b = 25°C Types •o ■RM @ V r r m d m @ Vd r m Vq t Vr r m ■ tsm ■ Tj max 10 ms V DRM A (V) 0,5 A rm s / Tease = 85°C 2N877 2N878 2N879 2N880 2N881 2N882 2N883 0,5 A im s / Tease = 75°C
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OCR Scan
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2N877
2N878
2N879
2N880
2N881
2N882
2N883
CB-971
ICB-2741
BRY 300
BRY 55 A
BRY 55 200
bry 55
BRY 100
TD5001
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PDF
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TD2003
Abstract: TY6004 TD4001 54-400T TY4004 TM6007 TM1007 TY504 TD6003 TM4007
Contextual Info: THYRISTORS Valeurs limites Absolute max. ratings Caractéristiques électriques Electrical characteristics V DWM TYPES •o V RWM V (AÏ 1,6 A eff (rms) / tease TD 501 TD1001 TD2001 TD3001 TD4001 TD5001 TD6001 1 1 i 1 1 1 1 1,6 A eff (rms) / 3 A eff (rms)
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OCR Scan
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TD1001
TD2001
TD3001
TD4001
TD5001
TD6001
2N1595
2N1597
2N1770
2N1771"
TD2003
TY6004
54-400T
TY4004
TM6007
TM1007
TY504
TD6003
TM4007
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PDF
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IC 4093 pin configuration
Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Contextual Info: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221
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OCR Scan
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O-236
IC 4093 pin configuration
BRY 56 B
IC 4093
MARKING 30 5Y
SO2894
4392
4392 a ic
BCV27
BFR30
BFR31
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PDF
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MEU21
Abstract: 2n 6027 transistor transistor To-106 3N81
Contextual Info: ni C R O E L E C T R O N I C S CORP ^ DE | t G T 1 7 ñ ñ □ □ 0 0 b 7 7 t j ~ T~ ¿-S'- ó f Special Devices PROGRAMMABLE UNIJUNCTION TRANSISTORS MAXIMUM RATINGS TYPE VF V max 'f (mA) VT V •v 'g k s 'g a o (V) max (JUA) max (jUA) max (nA) max (nA)
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OCR Scan
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MEU21
O-92BA
O-106
MT-42
O-92BF
O-92BF
O-237
2n 6027 transistor
transistor To-106
3N81
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PDF
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IC 4093 pin configuration
Abstract: IC 4093 marking 5Y bry 55 usage 4392 BFR31 BCV27 BFR30 R 25 10K1001
Contextual Info: ÿ n channel field effect transistors transistors à effet de champ canal ri iho m so n -csf Types SO 4416 30 0,1 5 15 B F R 3 0 (R BFR31 (R) 25 25 0,2 0,2 4 1 10 5 SO 245 A (R) SO 245 B (R) SO 245 C (R) 30 30 30 5 5 5 SO 3966 30 0,1 BSR 56 BSR 57 BSR 58
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OCR Scan
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C12SS
BFR30
BFR31
IC 4093 pin configuration
IC 4093
marking 5Y
bry 55 usage
4392
BFR31
BCV27
BFR30
R 25
10K1001
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PDF
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bry55
Abstract: 2N5061 BRX49 mcr100 BRX45 BRX44 MCR100-6 BRY55-400 2N5062 2N5064
Contextual Info: ' [r ]© Metal/Plastic Packages 0.5 to 100 Amperes RMS 25-800 Volts NOTE: On-State RMS Current 1.5 AMPS 0.8 AMP / / T c = 50°C TC = 58°C Industry S tandards, with a v a rie ty of Custom S pecifications and Leadform s a v a ila b le Sensitive Gate LEAD FORM:
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OCR Scan
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O-226AA
BRX44/BRY55-30
2N5060
BRX45/BRY55-60
2N5061
BRX46/BRY55-100
MCR100-3
2N5062
MCR22-4
BRX47/BRY55-200
bry55
2N5061
BRX49
mcr100
BRX45
BRX44
MCR100-6
BRY55-400
2N5064
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