BRIDGE 2A 600V Search Results

s2vb

Abstract: s2vb shindengen S2VB* bridge S2VB 20 40 S2VB60
Contextual Info: SHINDENGEN Square In-line Package Bridge Diode S2VB60 OUTLINE DIMENSIONS Case : S2VB Unit : mm 600V 2A RATINGS ● Absolute Maximum Ratings Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO 50Hz sine wave, R-load, Without heatsink, Ta=40℃

MBCR20M

Abstract: MBCR20J bridge 2A 600v MBCR20MH MBCR20JH
Contextual Info: ZOWIE Bridge Rectifier 600V~1000V / 2A MBCR20JH THRU MBCR20MH OUTLINE DIMENSIONS FEATURES Halogen-free type Internal structure with GPRC (glass passivated rectifier chip) inside Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame

3d4b41

Abstract: 2D4B41 2B4B41 3B4B41 2J4B41 3G4B41
Contextual Info: 9097250 3^ 1 e | TOSHIBA <DISCRETE/OPTO) ci 0 ci 7 g 5 0 DGG233S 2 J4B 41 600V S 0 ' T ~ S i 3 - O S ’. ‘ 39C 02335 RECTIFIER STA CK BRIDGE) | 2A Unit in mm MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING 2B4B41 Repetitive Peak Reverse Voltage 2D4B41 2G4B41

Contextual Info: Preliminary Data Sheet IX2R11 2A Half-Bridge Driver Features General Description ï Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. ï Fully operational to 650V ï ± 50V/ns dV/dt immunity ï Gate drive power supply range: 10 - 35V

S2VB* bridge

Abstract: S2VB60 S2VB bridge 2A 600v S2VB 20 40 MARKING CODE TL marking 6 bridge diode
Contextual Info: SQ I P 型 Bridge Diode Square In-line Package •外観図 OUTLINE S2VB60 Unit : mm Weight : 3g （typ.） Package：S2VB 600V 2A ② ① 特長 • 耐湿性に優れ高信頼性 • 高耐熱性 • 低 IR ③ ④ 7.5 Feature • High-Reliability • Heat Resistance

Contextual Info: SQ.I.P.3S! T/U'Vv ^'I'tT-K Square In-line Package Bridge Diode • O U T L IN E D IM E N S IO N S S2VBD 600V 2A ■ R A TIN G S A bsolute Maximum R atings - _ _ E3 At % ft. — ■— •— _ * o TT ——— -— _ Type No. Symbol Conditions

Contextual Info: SQ I P Bridge Diode Square In-line Package OUTLINE S2VB60 Unit : mm Weight : 3g typ. Package S2VB 600V 2A • • • ② ① ③ ④ IR 7.5 Feature • High-Reliability • Heat Resistance • Low IR 品名 Type No. 20 + S2VB 6N 20 − ロット記号（例）

D2SB 60A

Abstract: bridge diode 60a D2SB60A d2sb Bridge Diode Single In-line
Contextual Info: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D2SB60A Unit : mm Weight : 2.0g （typ.） Package：2S 600V 2A 品名 Type No. 特長 • 薄型 SIP パッケージ • 高 IFSM ロット記号（例） Date code

S2VB40

Abstract: S2VB20 SHINDENGEN DIODE
Contextual Info: Sauare In-line Packag Bridge Diode 54E 1> SHINDENGEN ELECTRIC MFG ISHEJ • 021^307 QOOOSll TQ3 O U T L IN E D IM E N S IO N S S2VBD 600V 2A ■ RATING S $5;fcÎSi:£/ËÎ& n Absolute Maximum Ratings @ t m Symbol I t em Storage Tem perature S-g-gPfiJS Operating Junction Tem perature

Contextual Info: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D2SB60A Unit : mm Weight : 2.0g （typ.） Package：2S 600V 2A 品名 Type No. 特長 • 薄型 SIP パッケージ • 高 IFSM ロット記号（例） Date code

HV MOSFET

Contextual Info: Preliminary Data Sheet IX2R11 2A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers

mosfet 600V 10A logic level

Abstract: IXFP4N100Q IXDD414 IX2R11P7 High Side dsei12 DSEI12-10A IX2R11 IX2R11S3 IXDD
Contextual Info: Preliminary Data Sheet IX2R11 2A Half-Bridge Driver Features • Floating High Side Driver with boot-strap Power supply along with a Low Side Driver. • Fully operational to 650V • ± 50V/ns dV/dt immunity • Gate drive power supply range: 10 - 35V • Undervoltage lockout for both output drivers

"12 amp" bridge rectifier

Abstract: MZ800 MZ80 MZ1000 MZ1200 MZ200 MZ200F MZ400 MZ600 MZ-8
Contextual Info: Three Phase 12 Amp Bridge Rectifier MZ200 - MZ1200 RED DOT POSITIVE c— !. ' K/ ; + H , U- l MZ200 MZ200F RED DOT POSITIVE RED DOT POSITIVE I i- ^ U 1 - =3 , 1 1 u T 1 / 4 - 2 8 U N C -2A M Z200FTDim. Inches Minimum A B C D E F G H 1 J K .018 -.290

1N4436

Abstract: 1N4437 1N443 1N4438
Contextual Info: Single Phase Bridge Rectifier N4436 1N4438 RED DOT POSITIVE A C 1 A C 2 + H Note: Electrically Isolated RED DOT POSITIVE RED DOT POSITIVE 1 —K —L Ol I I I f r r i M _ i , f ! I u T 1 / 4 - 2 8 UNC-2A 1N443_FTDim. Inches For Parts w /o Flags Delete F -1N443_FS

Contextual Info: S Q . I. P . 3 S Square In-line Package Bridge Diode O U T L IN E D IM E N S IO N S S2VBD 600V • Ì& & 0 2A R A TIN G S A bsolute Maximum R atings m s mn Item Symbol fS # -S S S to ra g e Tem perature O perating J u n c tio n Tem perature tbfiWrfi Average Rectified Forward Current

Contextual Info: SQ I PS! 7 'J Bridge Diode Square In-line Package • ^ ^ H l OUTLINE DIM ENSIO NS Package : S2VB S2VB pp^r n y M B # « 600V 2A ¿>2.8-gi a ) 45 £ 1 • s s t t ic f f ln s f f lis t t 7.5 • w u ta H M M ftw •S Q I P ■ Unit : m m («fiLtC D SnîEO LY CB:, }£EPtt«£C!B18<

TSM2N60CP

Abstract: TSM2N60 TSM2N60CH 2a 400v mosfet to-251
Contextual Info: TSC TSIVI2N60 N-Channel Power Enhancement Mode MOSFET TO-251 TO-252 VDS= 600V lD = 2A Pin assignment: 1. Gate 2. Source 1 r d s fo n i’ 3. Drain 3 Vgs @ 10V, Ids @ 1.0A =4.4Q General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

25V 1A power MOSFET TO-220

Abstract: mosfet 600V 2A TO-252 N-channel MOSFET MOSFET TO-220
Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

2a 400v mosfet to-251

Abstract: 600V 2A MOSFET N-channel MOSFET 400V TO-220 2a 400v mosfet marking code C5 N-Channel mosfet 600v 1a SOT c5 87 p channel mosfet 100v pin diagram of MOSFET 435 M dpak
Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

GBU4D

Contextual Info: Product Catalog > Diodes > Bridge Rectifiers > Part Number GBU4J product family BRIDGE RECTIFIERS package type GBU VRM PRV 600V Ifsm 150A IF(AV) 4.0A @Vf 1.0V @If 2.0A Trr IR 5.0µA @VR 600V Package Qty Tube : 20pcs/Tube, 1K/Box, 2K/Ctn; This product is listed under the following categories where you may find similar products:

2a 400v mosfet to-251

Abstract: N-Channel mosfet 600v 1a BRIDGE 2A 600V MOSFET TO-220 MOSFET "CURRENT source" impedance mosfet 600V 2A TO-252 N-channel MOSFET
Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

K 2915 MOSFET

Abstract: APQ02SN60AF SWITCHING DIODE 600V 2A MOSFET 40A 600V APQ02SN60AH 600V 2A MOSFET N-channel mosfet 600V 100A Mosfet 600V, 2A MOSFET 600V 2A
Contextual Info: DEVICE SPECIFICATION APQ02SN60AH APQ02SN60AF 600V/2A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

DB-193

Abstract: TFF2N60 TO-220FP-3
Contextual Info: TAK CHEONG N-Channel Power MOSFET 2A, 600V, 4.6Ω 1 = Gate 2 = Drain 3 = Source 1 2 General Description The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced