BREL CAP Search Results

2SC2668-Y

Abstract: 2SC2668
Contextual Info: TOSHIBA 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. • Sm all Reverse Transfer Capacitance • Low Noise Figure : U nit in mm Cre = 0.70pF (Typ.)

2SC2668

Abstract: 2SC2668Y vqb 27
Contextual Info: TOSHIBA 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. 4.2 M AX. • • Small Reverse Transfer Capacitance : Cre = 0.70pF (Typ.)

Contextual Info: WAY 1 0 JSJ3 VME 1210/1220 June 1990 Slot 1 and Non-Slot 1 VMEbus Master Controllers Distinctive Features_ • VME 1210 provides two device chip set for slot 1 master bus controller and single level arbiter • VME 1220 provides two device chip set for non-slot 1

VME bus controller

Abstract: PLD VME VME bus arbitration 1210a vme bus specification 1210B vme case 1210 LCC
Contextual Info: VME 1210/20 Slot 1 and Non-Slot 1 VMEbus Master Controllers March 1989 Distinctive Features. * VME 1210 provides two device chip set for slot 1 master bus controller and single level arbiter * VME 1220 provides two device chip set for non-slot 1 master bus controller

VME DAISY CHAIN

Contextual Info: VME 1210/20 Slot 1 and Non-Slot 1 VMEbus Master Controllers March 1989 Applications-* VMEbus masters residing in slot 1 boards VME 1210 * VMEbus masters residing in non-slot 1 boards (VME 1220) Distinctive Features_

VME bus controller

Abstract: VME DAISY CHAIN dhbd E1200 VME1200 VME controller single bus master CPU DSP
Contextual Info: Ä X -* V M E 1200 VMEbus Master Controller with System Arbiter T • C H M O L November 1988 Distinctive Features. Applications_ • • Two device chip set contains: - Bus requester - Single level system arbiter - VMEbus controller

Contextual Info: VM E1200 t% c h m o l o o v ^ VMEbus Master Controller with System Arbiter November 1988 Applications. Distinctive Features. • VMEbus master and system controller residing in slot 1 • Other VMEbus masters (residing in other slots) Two device chip set contains:

Contextual Info: VME 1210/1220 A 3 L May 1989 Slot 1 and Non-Slot 1 VMEbus Master Controllers Distinctive Features_ • VME 1210 provides two device chip set for slot 1 master bus controller and single level arbiter Applications_

EU100

Abstract: 2SC2668-Y 2SC2668 QE RB 29
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SC2668 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS 4 .2 M A X . • • Small Reverse Transfer Capacitance : Cre = 0.70 pF (Typ.)

74S245

Abstract: pin configuration 74LS32 74LS32 pin configuration 74LS764
Contextual Info: SCB68175 Signetics Bus Controller Preliminary Specification Microprocessor Products PIN CONFIGURATION DESCRIPTION FEATURES The Signetics SCB68175/8X821 Bus Controller is a high-speed bus requester and timing generator designed to inter­ face a local m aster typically, a m icro­

Contextual Info: 2SC2714 Fig- N F, GPe TEST CIRCUIT y PARAMETER Typ. (1) COMMON EMITTER (VCE = 6V, lE = -1 m A , f = 100MHz) CHARACTERISTIC Input Conductance Input Capacitance Reverse Transfer Admittance Phase Angle of Reverse Transfer Adimttance Forward Transfer Admittance

Contextual Info: T O SH IB A 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. • • Small Reverse Transfer Capacitance : Cre = 0.70pF (Typ.) Low Noise Figure

KZL 140 C

Abstract: 2SC2715
Contextual Info: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. + Oil Û255 1.5— FEATURES: High Power Gain : Gpe = 2dB Typ. (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. dd +1 HO EE- -e dci +1 M A X IM U M RATINGS (Ta = 25°C)

2SC2715

Contextual Info: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in HIGH FREQUENCY AMPLIFIER APPLICATIONS. FEATURES : High Power Gain : Gpe = 2dB Typ. (f= 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. CE­ C IM A X IM U M RATINGS (Ta = 25°C)

2SC2669

Abstract: 2SC2669-0 2SC2669-R 2SC2669-Y
Contextual Info: TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 30dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. 4.2MAX.

2SC2715

Contextual Info: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 HIGH FREQUENCY AMPLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 FEATURES : • High Power Gain : Gpe = 2dB (Typ.) (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage.

Contextual Info: TOSHIBA 2SC2715 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS n r WÊF 7 7 m i m s wmr HIGH FREQUENCY AM PLIFIER APPLICATIONS. U n it in mm + CL5 2.5-CI3 + 0 .2 5 1.5 - a i 5 FEA TU RES : H igh Pow er G ain • t— EE- : Gpe = 2dB (Typ.) (f= 10.7M H z)

2SC2669

Abstract: 2SC2669-0 2SC2669-R 2SC2669-Y
Contextual Info: TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. 4.2 MAX. High Power Gain : Gpe = 30dB (Typ.) (f= 10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage.

102 SE

Contextual Info: 2SC271 4 SIÜCQN NPN EPITAXIAL PLANAR TYPE t r a n s is t o r U nit in mm HIG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . FM , RF, M IX , IF A M P LIF IE R A PP LIC A T IO N S . FEATURES : • Small Reverse Transfer Capacitance: Cre = 0.7pF Typ. NF = 2.5dB (Typ.) ( f - 100MHz)

2SC380TM

Abstract: CIET 2SC380TM-R 2SC380TM-Y
Contextual Info: TOSHIBA 2SC380TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC380TM Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. High Power Gain : Gpe = 29dB (Typ.) (f = 10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. • MAXIMUM RATINGS (Ta = 25°C)

2SC2715

Abstract: TRANSISTOR MARKING FA
Contextual Info: 2SC2715 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • + 0.5 2.5-0.3 + 0.25 High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage.

intel 82258

Abstract: 82258 ulm 2003 logical block diagram of 80286 intel organisational structure 8225Q 80186 CPU subsystem bus controller 8288 intel 82188 CPU-82258
Contextual Info: in t e T 82258 ADVANCED DIRECT MEMORY ACCESS COPROCESSOR ADMA Automatic Data Chaining for Gathering and Scattering of Data Blocks 16 MByte Addressing Range 16 MByte Block Transfer Capability “On the Fly” Compare, Translate and Verify Operations Automatic Assembly/Disassembly of

Siemens 80186

Abstract: so do chan 4558 82257 SAB 80186 SAB82257 8086 a23 445-1 i82257
Contextual Info: Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems 8 MHz • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286, SAB 80186/188, SAB 8086/88 • 4 independent high-speed DMA channels • Adaptive on-chip bus interface for

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC2714 U nit in mm H IG H F R E Q U E N C Y A M P L IF IE R A P P L IC A T IO N S . F M , RF, M IX , IF A M P L IF IE R A P P L IC A T IO N S . +C12 5 1.3-015 FEATURES : • dd +l HO EE­ Small Reverse Transfer Capacitance: Cre = 0.7pF Typ.