BREL CAP Search Results

2SC2668-Y

Abstract: 2SC2668
Contextual Info: TOSHIBA 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. • Sm all Reverse Transfer Capacitance • Low Noise Figure : U nit in mm Cre = 0.70pF (Typ.)

2SC2668

Abstract: 2SC2668Y vqb 27
Contextual Info: TOSHIBA 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. 4.2 M AX. • • Small Reverse Transfer Capacitance : Cre = 0.70pF (Typ.)

Contextual Info: VM E1200 t% c h m o l o o v ^ VMEbus Master Controller with System Arbiter November 1988 Applications. Distinctive Features. • VMEbus master and system controller residing in slot 1 • Other VMEbus masters (residing in other slots) Two device chip set contains:

EU100

Abstract: 2SC2668-Y 2SC2668 QE RB 29
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SC2668 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS 4 .2 M A X . • • Small Reverse Transfer Capacitance : Cre = 0.70 pF (Typ.)

74S245

Abstract: pin configuration 74LS32 74LS32 pin configuration 74LS764
Contextual Info: SCB68175 Signetics Bus Controller Preliminary Specification Microprocessor Products PIN CONFIGURATION DESCRIPTION FEATURES The Signetics SCB68175/8X821 Bus Controller is a high-speed bus requester and timing generator designed to inter­ face a local m aster typically, a m icro­

Contextual Info: 2SC2714 Fig- N F, GPe TEST CIRCUIT y PARAMETER Typ. (1) COMMON EMITTER (VCE = 6V, lE = -1 m A , f = 100MHz) CHARACTERISTIC Input Conductance Input Capacitance Reverse Transfer Admittance Phase Angle of Reverse Transfer Adimttance Forward Transfer Admittance

KZL 140 C

Abstract: 2SC2715
Contextual Info: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. + Oil Û255 1.5— FEATURES: High Power Gain : Gpe = 2dB Typ. (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. dd +1 HO EE- -e dci +1 M A X IM U M RATINGS (Ta = 25°C)

2SC2715

Contextual Info: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in HIGH FREQUENCY AMPLIFIER APPLICATIONS. FEATURES : High Power Gain : Gpe = 2dB Typ. (f= 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. CE­ C IM A X IM U M RATINGS (Ta = 25°C)

2SC380TM

Abstract: 2SC380TM-R 2SC380TM-Y 2SC380
Contextual Info: TOSHIBA 2SC380TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC380TM Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. High Power Gain : Gpe = 29dB (Typ.) (f = 10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. • im

2SC2669

Abstract: 2SC2669-0 2SC2669-R 2SC2669-Y
Contextual Info: TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 30dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. 4.2MAX.

2SC2715

Contextual Info: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 HIGH FREQUENCY AMPLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 FEATURES : • High Power Gain : Gpe = 2dB (Typ.) (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage.

2SC2669

Abstract: 2SC2669-0 2SC2669-R 2SC2669-Y
Contextual Info: TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. 4.2 MAX. High Power Gain : Gpe = 30dB (Typ.) (f= 10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage.

102 SE

Contextual Info: 2SC271 4 SIÜCQN NPN EPITAXIAL PLANAR TYPE t r a n s is t o r U nit in mm HIG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . FM , RF, M IX , IF A M P LIF IE R A PP LIC A T IO N S . FEATURES : • Small Reverse Transfer Capacitance: Cre = 0.7pF Typ. NF = 2.5dB (Typ.) ( f - 100MHz)

2SC380TM

Abstract: CIET 2SC380TM-R 2SC380TM-Y
Contextual Info: TOSHIBA 2SC380TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC380TM Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. High Power Gain : Gpe = 29dB (Typ.) (f = 10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. • MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC2714 U nit in mm H IG H F R E Q U E N C Y A M P L IF IE R A P P L IC A T IO N S . F M , RF, M IX , IF A M P L IF IE R A P P L IC A T IO N S . +C12 5 1.3-015 FEATURES : • dd +l HO EE­ Small Reverse Transfer Capacitance: Cre = 0.7pF Typ.

Contextual Info: SIEMENS Advanced DMA Controller SAB 82258A for 16-/32-Bit Microcomputer Systems Advance Information SAB 82258A SAB 82258A-1 8 MHz 10 MHz 16 Mbytes addressing range 16 Mbytes maximum block size Command chaining for automatic processing Automatic data chaining scattering

2SC2669

Abstract: cq 455 2SC2669-0 2SC2669-R 2SC2669-Y BDH100
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SC2669 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 30dB (Typ.) (f = 10.7 MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. M AXIM UM RATINGS (Ta = 25°C)

a23 445-1 409

Abstract: 82257 sab80186 siemens s7 IM 365 82257-N SAB 80186 SIEMENS et 200 cpu
Contextual Info: SIEM ENS Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Prelim inary • High-perform ance 16-bit DMA controller for 16-bit family processors SAB 80286, SAB 80186/188, SAB 8086/88 • 4 independent high-speed DMA channels • Adaptive on-chip bus interface for

SAB 82258

Abstract: sab82257
Contextual Info: 4 7E D Device Specifications • fiSBSbGS SIEI1ENS DD330S1 1 « S IE G AKTI ENGESELLSCHAF Preliminary T - « 3 - 3 3 - l et SAB 82257 High-Performance DMA Controller for 16-Bit Microcomputer Systems SAB 82257 SAB 82257-6 8 MHz 6 MHz • • • • 16 Mbytes addressing range

Contextual Info: 47E D SIEMENS • ÔE35bD5 □03101,0 b « S I E G SIEMENS AK TIE NG ESE LLSCHAF ^ 5 3 - 3 3 - ^ Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Preliminary • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2716 U n it in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. A M HIGH FREQUENCY AMPLIFIER APPLICATIONS. A M FREQUENCY CONVERTER APPLICATIOS. FEATURES : • Low Noise Figure NF = 3.5dB Max. (f= 1MHz) M A X IM U M RATINGS (Ta = 2 5°C)

dda09

Abstract: siemens 286
Contextual Info: 47E SIEM EN S » • ñ23SbOS SIEMENS GDaasm 7 «SIEG AKTIENGESELLSCHAF ^ •5 2 -3 3 -1 ^ SAB 82C257 Advanced DMA Controller for 8-/16-Bit Microcomputer Systems 10MHz Advanced Information • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,

2SC2714

Abstract: transistor C5D marking 9rb
Contextual Info: T O S H IB A 2SC2714 TOSHIBA TRANSISTOR 2SC2714 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 I1 FM, RF, MIX, IF AM PLIFIER APPLICATIONS. FEATURES : • Small Reverse Transfer Capacitance: Cre = 0.7pF (Typ.)

LM 329 N

Contextual Info: SILICON NPN EPITAXIAL TYPE TRANSISTOR 2SC2716 U nit in mm H IG H FREQ U EN CY A M P LIF IE R A PP LIC A T IO N S . AM HIG H FREQ U EN CY A M P LIF IE R A P P LIC A T IO N S . A M FREQUENCY C O NVERTER A PP LIC A TIO S. FEATURES : • Low Noise Figure EE- : NF = 3.5dB Max. (f= 1MHz)