BR93L Search Results

EEPROM MARKING L46

Abstract: rl46 MARKING L66 EEPROM RL56 eeprom EEPROM MARKING rl56 RL66 EEPROM IC rl46 BR93L56
Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BR93Lxx-W ●General Description BR93Lxx-W is serial EEPROM of serial 3-line interface method ●Features „ 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared)

BR93H66RF-WC

Abstract: BR93L46-W BR93L56-W BR93L66-W BR93L76-W BR93L86-W 66-WM br93h76
Contextual Info: High Reliability Serial EEPROMs High Reliability Series EEPROMs Microwire BUS BR93L□□-W Series, BR93A□□-WM Series, BR93H□□-WC Series No.11001EFT03 ROHM's series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a

Contextual Info: BR93LC46 BR93LC46A BR93LC46F BR93LC46AF The BR93LC46/F and BR93LC46A/AF are CMOS serial input/output-type memory circuits EEPROMs that can be programmed electrically. Each can store up to 1024 bits in 64 sixteen bit words. Each word can be accessed separately.

rl76

Abstract: EEPROM MARKING L46 eeprom rl56 Rl86 RL66 EEPROM RL46 EEPROM MARKING rl56 IC rl46 L66 eeprom ROHM marking R66
Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BR93Lxx-W ●General Description BR93Lxx-W is serial EEPROM of serial 3-line interface method ●Features „ 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared)

BR93LC56AF

Abstract: 7020 fsk BR93LC56 BR93LC56A BR93LC56F
Contextual Info: BR93LC56 BR93LC56A BR93LC56F BR93LC56AF Tile BR93LC56/F and BR93LC56A/AF are CMOS serial input/output-type memory circuits EEPROMs that can be programmed electrically. Each can store up to 2048 bits in 128 sixteen bit words. Each word can be accessed separately.

BR93LC46F-W

Abstract: BR93LC46 BR93LC46-W
Contextual Info: BR93LL46F-W/FV-W <Under development> BR93LC46-W/F-W/RF-W/FJ-W/RFJ-W/FV-W Features Pin Configuration • 1k bit serial EEPROM organized as 64 x 16bit • Low voltage operation Read : 1.8~4.0V BR93LL46 , 2.0~5.5V(BR93LC46) Write : 1.8~4.0V(BR93LL46), 2.7~5.5V (BR93LC46)

br93lc66a

Abstract: BR93LC66 BR93LC66F BR93LC66FJ BR93LC66FV BR93LC66RF BR93LC66RFJ
Contextual Info: BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FJ / BR93LC66RFJ / BR93LC66FV Memory ICs 256x16bits serial EEPROM BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FJ / BR93LC66RFJ / BR93LC66FV The BR93LC66 series are CMOS serial input/output-type memory circuits EEPROMs that can be programmed

SK 3002

Abstract: BR93LC46F BR93LL46F BR93LL46FV
Contextual Info: Memory ICs 1,024-Bit Serial Electrically Erasable PROM BR93LL46F / BR93LL46FV •• Features Low power CMOS technology • 64 x 16 bit configuration • 1.8V to 4.0V operation • Low power dissipation – 0.5mA typ. active current – 0.4µA (typ.) standby current

ha1096

Abstract: BR93LC66A
Contextual Info: BR93LC66 BR93LC66A 256X 16 bit serial EEPROM BR93LC66RF BR93LC66ARF The BR93LC66/RF and BR93LC66A/ARF are CMOS serial input/output-type memory circuits EEPROMs that can be programmed electrically. Each can store up to 4096 bits in 256 sixteen bit words. Each word can be

BR93LC46A

Abstract: BR93LC46AF T93LC46
Contextual Info: BR93LC46/BR93LC46F/BR93LC46A/BR93LC46AF BR93LC46/BR93LC46F/BR93LC46A/ BR93LC46AF 6 4 X 1 6 t: y N > U T V EEPR O M 6 4 X 1 6Bit Serial E EPR O M V 7 A n JB E * BR93LC46/BR93LC46A l i , CMOS y ' J 7 M / 0 • W fi^ iiE I/D im e n s io n s U nit: mm) U (EEPROM) T ' t 0

BR93L46-W

Abstract: BR93L56-W BR93L66-W BR93L76-W BR93L86-W WM Mark code BR93H-WC BR93L56
Contextual Info: Serial EEPROM Series High Reliability Series EEPROMs Microwire BUS BR93L□□-W Series, 93A□□-WM Series, BR93H□□-WC Series No.09001EET03 ROHM's series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a

LC46

Contextual Info: Memory ICs 1,024-Bit Serial Electrically Erasable PROM BR93LC46/BR93LC46F/BR93LC46RF/BR93LC46FV •F e a tu re s • P i n configurations • Low power CMOS Technology • 64 x 16 bit configuration • 2.7V to 5.5V operation • Low power consumption - 3mA max. active current : 5V

BR93LC66

Abstract: BR93LC66A BR93LC66F BR93LC66FV BR93LC66RF SK Series capacitor
Contextual Info: Memory ICs 4,096-Bit Serial Electrically Erasable PROM BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV •• Features Low power CMOS Technology • 256 x 16 bit configuration • 2.7V to 5.5V operation • Low power dissipation – 3mA max. active current: 5V

BR6216A-15L

Abstract: EEPROM Capacity 24L04 2864a-25 BR6216A
Contextual Info: 7fl5fl'ì'ìcì ODDbTOB 711 Memory ICs ROHM CO LTD [EEPROM 5bE D •Serial EEPROM Capacity Type Bit) Composition (Woid X Bit) BR 93LC 46/F 1K BR93LC46A/AF 64X16 2K BR 93LC 56/F vire iystem 128x16 BR93LC56A/AF BR9041A/ARF 4K BR93LC66/RF 256X16 BR93LC66A/ARF

Contextual Info: Memory ICs 4,096-Bit Serial Electrically Erasable PROM BR93LC66/BR93LC66F/BR93LC66RF/BR93LC66FV • P i n configuration • F e a tu re s • Low power CMOS Technology CS [ T • 2 5 6 x 1 6 bit configuration • 2.7V to 5.5V operation SK ^ • Low power consum ption

Contextual Info: Memory ICs 1,024-Bit Serial Electrically Erasable PROM BR93LL46F/BR93LL46FV •Features • Low power CMOS technology • 64 x 16 bit configuration • 1.8V to 4.0V operation • Low power consumption - 0.5mA typ. active current - 0.4 f i k (typ.) stanby current

Contextual Info: BR93LL46F 6 4 x 1 6 bit serial EEPROM The BR93LL46F is a CMOS serial input/output-type memory circuit EEPROM that can be programmed electrically. It can store up to 1024 bits in 64 sixteen-bit words. Each word can be accessed separately. Dimensions (Units : mm)

ftt112

Abstract: BR93L56RFV-W BR93L56-W BR93L56
Contextual Info: OSTRUCTURE OPRODUCT NAME OPART NUMBER OOUTLINE DIMENSION OBLOCK DIAGRAM OFUNCTION OFEATURES Silicon Monolithic Integrated Circuit 128 x 16 bit Electrically Erasable Programmable ROM BR93L56/F/RF/FJ/RFJ/FV/RFV/RFVM-W Fig. - 1 Plastic Mold Fig. - 2 General purpose

Contextual Info: BR93LL46F 6 4 x 1 6 bit serial EEPROM The BR93LL46F is a CMOS serial input/output-type memory circuit EEPROM that can be programmed electrically. It can store up to 1024 bits in 64 sixteen-bit words. Each word can be accessed separately. Dimensions (Units : mm)

br6116-100

Abstract: BR2864A-350 BR93C56B BR9021A BR6264P-100 BR6116 BR2804A-250 BR2804A-450 EEPROM Capacity br6216 ic
Contextual Info: mna M o n o lith ic ICs EEPROM * Capacity bits Type Configuration (words X bits) BR93C46 BR93C46A 1K BR93CS46 BR93LC46 BR93CS6A BR93C56B BR9021A ☆BR9021B CD (/) 2K 128 X 16 BR93C66B 4K 256 X 4K 16K _ 03 64 K Supply voltage (V) 512x8 8K X X 8 8 Standby

SKPT 11

Abstract: M93LC56 skpt 17 BR93LC56A SKPT ii SKPT SKPT 17 2/2
Contextual Info: BR93LC56/BR93LC56F/BR93LC56A/BR93LC56AF BR93LC56/BR93LC56F/BR93LC56A BR93LC56AF i28xi6B¡t y y tjv eeprom Dn9«lbV9UHr 128X16Bit Serial EEPROM =j A ñ jf g & ' CMOS y'J T ’Jl'i/O $ 4 - ? O )* *') EEPROM) X’t o 128 7 - K X 1 6 tí y h (2048 t;' -y h )

7020 fsk

Abstract: SK 100 KQ 12 BR93LL46F 11XXXX SOP8
Contextual Info: BR93LL46F 64 x 16 bit serial EEPROM The BR93LL46F is a CMOS serial input/output-type memory circuit EEPROM that can be programmed electrically. It can store up to 1024 bits in 64 sixteen-bit words. Each word can be accessed separately. D im e n s io n s (U n its : m m )

BR93LC46

Abstract: BR93LC46F-W BR93LC46FJ-W BR93LC46FV-W BR93LC46RFJ-W BR93LC46RF-W BR93LC46-W
Contextual Info: Memory ICs BR93LC46-W / BR93LC46F-W / BR93LC46RF-W / BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W 64x16bits serial EEPROM BR93LC46-W / BR93LC46F-W / BR93LC46RF-W / BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W The BR93LC46-W series are CMOS serial input / output-type memory circuits EEPROMs that can be programmed

VSON008X2030

Contextual Info: Reliability Test Result DEVICE : BR93L□□-W Series RESULT ITEM METHOD CONDITION n pcs pn(pcs) － 77 x 3 Resistance to Soldering Heat (*2) After the moisture soaking treatment, carry out the soldering heat stress (IR reflow : peak 260℃) Resistance to Soldering Heat (*2)