BR MARK Search Results

DIAC DB3 specifications

Abstract: diac db3 D60 DIAC db3 dl breakback dmmdb4
Contextual Info: BI-DIRECTIONAL DIAC DB3 & DB4 Series SPECIFICATIONS Parameters Symbol Breakover Voltage V BR 1, V(BR)2 Breakover Voltage Symmetry |V(BR)1|-|V(BR)2| Dynamic Breakback Voltage I±V DI Breakover Current I(BR)1 AND I(BR)2 Peak Pulse Current for IP 10ms, 120pps, TA£4°C

DIAC DB3 specifications

Abstract: diac db3 D60 DIAC diac breakback
Contextual Info: BI-DIRECTIONAL DIAC DB3 & DB4 Series SPECIFICATIONS Parameters Symbol Breakover Voltage V BR 1, V(BR)2 Breakover Voltage Symmetry |V(BR)1|-|V(BR)2| Dynamic Breakback Voltage I±V DI Breakover Current I(BR)1 AND I(BR)2 Peak Pulse Current for IP 10ms, 120pps, TA£4°C

marking br

Abstract: 1mm pitch BGA br27
Contextual Info: NETWORKS Thick Film R-Network BGA Resistor Package BR STRUCTURE 1 2 3 4 5 6 7 8 W IDENTIFICATION Type BODY COLOR MARKING BR Black All these products have Pb-free terminations and meet RoHS requirements White, Alpha Numeric BR 27 A P T TEB 1002 F PRODUCT CODE

TMPTA06

Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560
Contextual Info: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V|BR CBO V|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE

tp4093

Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type BR CBO V ’ (BR)CEO (V) (V) v DC Current Gain (BR)EBO Max. @ V C8 (V) (nA) (V) K* v CE(MI) @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

feature of ic UM 66

Abstract: 1r06 Y447 MPA-600 TSA2 um 66 ic 1R02 borosilicate glass NIST 546nm 1R01
Contextual Info: DIVISION DOCUMENT#-rev-# SEMICONDUCTEURS BROMONT, QUÉBEC 1050010.14 REV de 38 Jean-François Bédard DATE ACI 1R01 1R02 89/06/01 91/09/19 1R03 1R04 92/03/12 93/02/15 # br-376 # br-375 # br-505 BR-795 1R05 93/04/19 N/A 1R06 10-SE-93 N/A 7 94/07/04 N/A 8 9

Bobbins and Accessories

Abstract: E16 bobbin bobbins philips bobbin PQ2026 ER bobbin
Contextual Info: 3923 EN BR magn.prd.acc 04-09-1998 13:29 Philips Components Bobbins & Accessories Pagina 1 Winding and assembling your perfect component 3923 EN BR magn.prd.acc 3923 EN BR magn.prd.acc 04-09-1998 13:29 Pagina 2 Our bobbins… …your basis for perfect windings

040-H

Abstract: npn, transistor, sc 107 b
Contextual Info: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30 Vdc Collector–Emitter Voltage V(BR)CEO 20 Vdc Emitter–Base Voltage V(BR)EBO 5.0 Vdc IC

sc 107 transistor

Abstract: NPN TRANSISTOR SC-70 23marking
Contextual Info: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30 Vdc Collector–Emitter Voltage V(BR)CEO 20 Vdc Emitter–Base Voltage V(BR)EBO 5.0 Vdc IC

sot-323 transistor marking code 15

Abstract: sc 107 transistor NPN TRANSISTOR SC-70
Contextual Info: MSC3930-BT1 Preferred Device NPN RF Amplifier Transistor http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 30 Vdc Collector−Emitter Voltage V(BR)CEO 20 Vdc Emitter−Base Voltage V(BR)EBO 5.0 Vdc IC

transmitting triode

Abstract: marconi company marconi
Contextual Info: BR 129/JULY 1954 Triode Type BR 129 HF AMPLIFIER AND OSCILLATOR General. The BR 129 is a forced-air-cooled transmitting triode fitted with a tungsten filament. Cooling. The anode requires forced air cooling. The air cooling and air flow characteristics given show the

Contextual Info: SPLICING GUIDE FOR MIRROR-IMAGE CABLE MIRROR-IMAGE LAY-UP 25 V/S 24 V/BR 23 V/G 22 V/O 12 BK/O 13 BK/G 4 W/BR 3 W/G 10 R/S 9 R/BR 20 Y/S 15 BK/S 5 W/S 1 W/BL 11 BK/BL 21 V/BL 14 BK/BR 2 W/O 6 R/BL 16 Y/BL 7 R/O 17 Y/O 8 R/G 18 Y/G 19 Y/BR 25 PAIR UNIT U-25

btp 128 550

Abstract: AXP 209 TPSMP6.8A
Contextual Info: TPSMP6.8 thru TPSMP43A Vishay General Semiconductor New Product High Power Density Surface Mount Automotive Transient Voltage Suppressors DO-220AA SMP MAJOR RATINGS AND CHARACTERISTICS V(BR) 6.8 V to 43 V PPPM (for V(BR) 6.8 V) 250 W PPPM (for V(BR) 7.5 V - 12 V)

npn, transistor, sc 107 b

Abstract: MOTOROLA DATE CODE transistor
Contextual Info: MSC2295-BT1* MSC2295-CT1* CASE 318D-03, STYLE 1 COLLECTOR MAXIMUM RATINGS 3 Ï A = 25 C Rating Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current-Continuous Symbol Value Unit v (BR)CBO 30 Vdc V(BR)CEO 20 Vdc v (BR)EBO

O437

Abstract: marconi company marconi
Contextual Info: BR 155/JULY 1954 arconi Triode Type BR 155 VHF A M PLIFIER AND OSCILLATOR General. The BR 155 is a forced-air-cooled transm it­ ting triode fitted with a tungsten filament. Filament Starting. The cold filament resistance is approximately 0-01Q. The filament current must not

TS16949

Abstract: ZXTN25060BFH ZXTP25060BFH ZXTP25060BFHTA
Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to

Contextual Info: D D H1 H W W1 D C-TICK Mark Safety Approved BR

TS16949

Abstract: ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
Contextual Info: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to

ZXTN25060BFH

Abstract: ZXTP25060BFH ZXTP25060BFHTA
Contextual Info: ZXTP25060BFH 60V, SOT23, PNP medium power transistor Summary BV BR CEX > -100V, BV(BR)CEO > -60V BV(BR)ECO > -7V ; IC(cont) = -3A; RCE(sat) = 58 m⍀ typical; VCE(sat) < -85mV @ -1A ; PD = 1.25W Complementary part number ZXTN25060BFH Description C Advanced process capability and package design have been used to

marking 056

Abstract: ZXTP25100BFH ZETEX marking 056 SOT23 ZXTN25100BFH ZXTP25100BFHTA ZXTN
Contextual Info: ZXTP25100BFH 100V, SOT23, PNP medium power transistor Summary BV BR CEX > -140V, BV(BR)CEO > -100V BV(BR)ECX > -7V ; IC(cont) = -2A VCE(sat) < -130mV @ -1A RCE(sat) = 108m⍀ typical PD = 1.25W Complementary part number ZXTN25100BFH Description C Advanced process capability and package design have been used to

IEC 60603-7-51

Contextual Info: 24 Tol. <500 ≥500 10 20 >1500 25 >5000 40 >8000 60 >15000 100 200 Paar 2 pair 2 W-O 1 O 2 3 3 Paar 1 pair 1 4 W-BL 5 G 6 W-BR 7 4 Paar 4 pair 4 BL BR 5 6 7 S >50000 >100000 300 500 Paar 3 pair 3 G W-O W-BR Paar 4 pair 4 BR Paar 2 pair 2 O BL Paar 1 pair 1

MSB710QT1

Abstract: marking code LG transistors
Contextual Info: MSB710-QT1 MSB710-RT1* CASE 318D-03, STYLE 1 MAXIMUM RATINGS |TA = 25 Cl Rating Value Unit Collector-Base Voltage v BR CBO -3 0 Vdc Collector-Emitter Voltage V(BR)CEO -2 5 Vdc Emitter-Base Voltage v (BR)EBO -7 Vdc 'c -5 0 0 mAdc 'C(P) -1 Ade Symbol Max Unit

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e