2N5449
Abstract: MPS-K72 2N3694 2N3693 2N5143 2N5447 k72 npn k72 transistor Three-Five 2N5127
Contextual Info: Econoline P la stic -M o ld e d Silicon S E P T ” Transistors i GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS TO-92 Package E BC Pinning D -C C U R R E N T G A IN >- Type No. cc < o CL Pd (h F E ) Lim its T a = V(BR| V(BR) V(BR) ICBO Conditions nA 25 C C BO CEO EBO
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2n36942n51272n51312n5132+145n5451tp5137tp5139tp5824tp5825tp58262n5449mps-k722n36932n51432n5447k72 npnk72 transistorthree-five
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transistor 9018
Abstract: 9018 9018 transistor
Contextual Info: NPN SILICON TRANSISTOR 9018 TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.31 W Tamb=25 Collector current A ICM : 0.05 Collector-base voltage V V BR CBO : 25 Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25
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400mhztransistor 901890189018 transistor |
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2sa1516
Abstract: 2SC3907
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power amplifier applications
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2sA1516 transistor
Abstract: 2SA1516 transistor 2sc3907 2SC3907
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 APPLICATIONS ·Power amplifier applications
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2sa1516-180v2sc3907-50ma+22sa1516 transistortransistor 2sc3907
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2SA1104
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1104 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -120V(Min) ·Good Linearity of hFE ·High Power Dissipation APPLICATIONS ·Designed for audio power amplifier applications
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2sa1104-120v-50ma |
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transistor 2SA1215
Abstract: 2SA1215 2SC2921
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1215 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min) ·High Power Dissipation ·Complement to Type 2SC2921 APPLICATIONS ·For audio and general purpose applications
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2sa1215-160v2sc2921transistor 2sa1215 |
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2sa1105
Abstract: transistor 120v
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1105 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -120V(Min) ·Good Linearity of hFE ·High Power Dissipation APPLICATIONS ·Designed for audio power amplifier applications
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2sa1105-120vwebsitew25-50ma+1transistor 120v
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2sc2578 transistor
Abstract: 2SA1103 2SC2578
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1103 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -100V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2578 APPLICATIONS ·Designed for audio power amplifier applications
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2sa1103-100v2sc2578-50ma+12sc2578 transistor
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2SC3519
Abstract: 2SA1386 2SA1386A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1386/A DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min)-2SA1386 = -180V(Min)-2SA1386A ·Good Linearity of hFE ·Complement to Type 2SC3519/A APPLICATIONS
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2sa1386/a-160v-2sa1386-180v+5-2sa1386a2sc3519/a2sa13862sa1386a2sc3519
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2SA1065
Abstract: 2SC2489 transistor 2sa1065
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1065 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2489 APPLICATIONS
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2sa1065-150v2sc2489-100ma+1transistor 2sa1065
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2sa1694 2sc4467
Abstract: transistor 2SC4467 2sa1694 2SC4467 transistor 2SA1694
Contextual Info: INCHANGE Semiconductor Product Specification 2SA1694 Silicon PNP Power Transistor DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4467 APPLICATIONS ·Designed for audio and general purpose applications
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2sa1694-120v2sc44672sa1694 2sc4467+2transistor 2sc4467transistor 2sa1694
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2SA1303
Abstract: 2SC3284 pnp transistor 5A 150V power transistor transistors equivalents
Contextual Info: INCHANGE Semiconductor Product Specification 2SA1303 Silicon PNP Power Transistor DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3284 APPLICATIONS ·Designed for audio and general purpose applications
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2sa1303-150v2sc3284pnp transistor 5a 150v+1power transistor transistors equivalents
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2SB871
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB871 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -20V(Min) ·High Speed Switching ·Low Collector Saturation Voltage : VCE(sat)= -0.6V(Max)@IC= -10A APPLICATIONS
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2SC3857
Abstract: 2SA1493
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3857 APPLICATIONS ·For audio and general purpose applications
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2SA1064
Abstract: 2SC2488
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1064 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2488 APPLICATIONS
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2sa1064-150v2sc2488-100ma |
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2SA1693
Abstract: 2SC4466
Contextual Info: INCHANGE Semiconductor Product Specification 2SA1693 Silicon PNP Power Transistor DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4466 APPLICATIONS ·Designed for audio and general purpose applications
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2sa16932sc4466 |
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2SC2487
Abstract: 2SA1063
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1063 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2487 APPLICATIONS
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transistor 2sa1494
Abstract: TRANSISTOR 2sc3858 2sc3858 transistor 2SC3858 2sa1494 data sheet transistor 2sc3858 transistor pnp 12v 1a 2SC3858 2SA1494
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3858 APPLICATIONS ·For audio and general purpose applications
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2sa1494-200v2sc3858transistor 2sa1494+5transistor 2sc38582sc3858 transistordata sheet transistor 2sc3858transistor pnp 12v 1a2sc3858 2sa1494
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transistor 2sc3519
Abstract: 2SC3519 transistor 2sa1386 2SC3519A 2SA1386 isc 2sc3519a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A APPLICATIONS
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2sc3519/a-2sc3519-2sc3519a2sa1386/a+62sc35192sc3519atransistor 2sc3519transistor 2sa13862sa1386isc 2sc3519a
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2SC4468
Abstract: 2SA1695
Contextual Info: INCHANGE Semiconductor Product Specification 2SA1695 Silicon PNP Power Transistor DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -140V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4468 APPLICATIONS ·Designed for audio and general purpose applications
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2sa1695-140v2sc4468 |
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2SA1494
Abstract: transistor 2sc3858 transistor pnp VCEO 12V Ic 1A 2SC3858 data sheet transistor 2sc3858 2SA1494 equivalent 2sc3858 transistor characteristics 2SC3858 transistor 2sa1494
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3858 APPLICATIONS ·For audio and general purpose applications
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2sa1494-200v2sc3858transistor 2sc3858+6transistor pnp vceo 12v ic 1adata sheet transistor 2sc38582sa1494 equivalent2sc3858 transistorcharacteristics 2sc3858transistor 2sa1494
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transistor 2sa1102
Abstract: transistor 2sC2577 2SA1102 2sc2577 2SC2577 transistor 12v TRANSISTOR AUDIO AMPLIFIER
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1102 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2577 APPLICATIONS ·Designed for audio power amplifier applications
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2sa11022sc2577-50matransistor 2sa1102+3transistor 2sc25772sc2577 transistor12v transistor audio amplifier
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transistor 2sa1386
Abstract: transistor 2sc3519 2SA1386 2SC3519
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1386 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3519 APPLICATIONS ·For audio and general purpose applications
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2sa1386-160v2sc3519transistor 2sa1386+1transistor 2sc3519
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2SA812
Abstract: marking M4
Contextual Info: RECTRON 2SA812 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : -0.1 * Collector-base voltage V(BR)CBO : -60 * Operating and storage junction TJ,Tstg: -55OC to +150OC
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2sa812ot-23-55oc150oc+2mil-std-202emarking m4
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