BR 38 SMD Search Results

bel 187 transistor

Contextual Info: User's Guide SLVU893 – June 2013 Using the TPS92075 BUCK Converter The TPS92075EVM is a 14-W maximum, 120-VAC non-isolated dimmable LED driver whose form factor intended for A-15, A-19, A-21, A-23, R-20, R-25, R-27, R-30, R-40, PS-25, PS-30, PS-35, BR-30, BR-38,

Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7343 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit VDS 55 -55 V ID 4.7

KRF7604

Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7604 Features Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Continuous Drain Current, VGS @ -4.5V @ Ta = 25

SMD 3B

Abstract: smd Transistor 1116 transistor smd 2b SMD SINGLE GATE KPCF8402 3b smd transistor
Contextual Info: IC IC SMD Type Silicon P, N Channel MOS Type Transistor KPCF8402 Features Low drain-source ON resistance : P Channel RDS ON = 60 m (typ.) N Channel RDS (ON) = 38 m (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel |Yfs| = 6.8 S (typ.)

KRF7750

Abstract: HEXFET Power MOSFET P-Channel 4,7 16v smd MOSFET TSSOP-8 smd transistor 26
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7750 TSSOP-8 Unit: mm Features Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile 1.1mm Available in Tape & Reel 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter

2SB1000

Abstract: SMD BR 08 smd marking AJ POWER ic marking AJ ICP Amplifier IC
Contextual Info: Transistors SMD Type Silicon PNP Epitaxial 2SB1000 Features Low frequency amplifier. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -25 V Collector to emitter voltage VCEO -20 V Emitter to base voltage VEBO -5

Contextual Info: PD - 91433C IRHNA9160 JANSR2N7425U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/655 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9160 100K Rads (Si) IRHNA93160 300K Rads (Si)

IRHNA9160

Abstract: IRHNA93160 JANSF2N7425U JANSR2N7425U
Contextual Info: PD - 91433B IRHNA9160 JANSR2N7425U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/655 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9160 100K Rads (Si) RDS(on) 0.068Ω ID -38A

IRHNA9160

Abstract: IRHNA93160 JANSF2N7425U JANSR2N7425U
Contextual Info: PD - 91433C IRHNA9160 JANSR2N7425U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/655 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9160 100K Rads (Si) IRHNA93160 300K Rads (Si)

78 DIODE SMD

Abstract: KRF7504
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7504 Features Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ -4.5V @ TA = 25

smd rgs

Abstract: SMD TRANSISTOR FL smd code buz 7C SMD TRANSISTOR SMD TRANSISTOR qd SM-38 transistor SMD DIODE 681 smd transistor ds smd transistor ds 65 DIODE BUZ smd
Contextual Info: Infineon technologies BUZ 32 SMD SIPMOS Power T ransistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds 1D ^DS(on) Package BUZ 32 SMD 200 V 9.5 A 0.4 f i d 2p a k Ordering Code Q67042-S4133 Maximum Ratings Parameter

smd diode 77a

Abstract: p-channel mosfet 78 DIODE SMD KRF7317 77A DIODE
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7317 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Symbol N-Channel P-Channel Unit

78 DIODE SMD

Abstract: P channel MOSFET 50A KRF7507 P-channel power mosfet
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7507 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Absolute Maximum Ratings Ta = 25 Parameter

diode smd 270a

Abstract: smd transistor 3400 ld smd transistor smd transistor nc 61 KRF4905S mosfet, hexfet to-263 930 diode smd EAR20
Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRF4905S 1 .2 7 -0+ 0.1.1 TO-263 Features Advanced Process Technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 P-Channel Fully Avalanche Rated 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 1 5 .2 5 -0+ 0.2.2

Contextual Info: Transistors IC SMD Type HEXFET Power MOSFET KRF9640S TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Surface Mount Available in Tape & Reel +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 Fast Switching Ease of Paralleling 0.1max +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 2.54

smd 2N3906

Abstract: 2N3904 TRANSISTOR SMD 2N3906 SMD
Contextual Info: General Purpose Transistor SMD Diodes Specialist 2N3906-G PNP RoHS Device Features TO-92 -PNP silicon epitaxial planar transistor for 0.185(4.70) 0.173(4.40) 0. 135 ( 3. 43) M i n. 0.185(4.70) 0.169(4.30) 2N3904-G is recommended. 0.055 (1. 14) 0. 0 20( 0 .51 )

3PN0403

Abstract: IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 PG-TO263-3-2 GD 898
Contextual Info: Preliminary Data Sheet IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on (SMD Version) 3.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1

3N0609

Abstract: smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf
Contextual Info: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

3N06L06

Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
Contextual Info: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow

2n04h4

Abstract: SP0002-18169 H4 SMD SP000218165 TRANSISTOR SMD MARKING CODE 42 IPB80N04S2-H4 IPI80N04S2-0H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2
Contextual Info: IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2n04h4

Abstract: IPI80N04S2-0H4 infineon 2N04H4 H4 SMD ANPS071E IPB80N04S2-H4 IPI80N04S2-H4 IPP80N04S2-H4 PG-TO263-3-2 2N-0
Contextual Info: IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary V DS 40 V R DS on ,max (SMD version) 3.7 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow

2n0612

Abstract: smd diode marking 77 ANPS071E IPB77N06S2-12 IPP77N06S2-12 PG-TO263-3-2 infineon 2n0612 SP0002-18173 SP0002-18172
Contextual Info: IPB77N06S2-12 IPP77N06S2-12 OptiMOS Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 11.7 77 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature

3N06L06

Abstract: IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2
Contextual Info: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

Q67065-A7014

Abstract: IPI80N06S3L06
Contextual Info: Preliminary Data Sheet IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80