ZTX384
Abstract: BPW41D ultrasonic 4046 pll zpd200 low noise ir photodiode amplifier INTRODUCTION OF AUTOMATIC ROOM LIGHT CONTROL Design and construction Wave FM radio transmitter BPW41 IR DATA BPW41 circuit application 4046 self bias amplifier
Contextual Info: Application Note 3 Issue 2 November 1995 Infra-Red Remote Control and Data Transmission An Introduction to Photodiodes - Load Circuits and Applications David Bradbury Introduction The use of short range remote control and data transmission systems in both
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bpw41dztx384ultrasonic 4046 pllzpd200+6low noise ir photodiode amplifierintroduction of automatic room light controldesign and construction wave fm radio transmitterbpw41 ir databpw41 circuit application4046 self bias amplifier
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m3870
Abstract: TDA2320 equivalent 2x1N4148 TDA2320 bpw41 bd237 equivalent TV IR remote control circuit diagram BC377 equivalent BC377 BPW41 circuit application
Contextual Info: TDA2320 PREAMPLIFIER FOR INFRARED REMOTE CONTROL SYSTEMS DESCRIPTION The TDA2320is a monolithic integratedcircuit in Dip package especially designedto amplify the IR signal in remote controlled TV or radio sets. It directly interfaces the digital control circuitry.
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tda2320tda2320ism709a/m710a/mosm3870+8tda2320 equivalent2x1n4148bpw41bd237 equivalenttv ir remote control circuit diagrambc377 equivalentbc377bpw41 circuit application
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BPW41 circuit
Abstract: BPW41 remote control a1bb BC377 BPW41 circuit application 2x1N4148 BPW41
Contextual Info: TDA2320 PREAMPLIFIER FOR INFRARED REMOTE CONTROL SYSTEMS DESCRIPTION The TDA2320 is a monolithicintegrated circuit in Dip package specially designed to amplify the IR signal in remote controlled TV or radio sets. It directly interfaces with the digital control circuitry.
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tda2320m709a/m710a/mosm3870tda2320n+7bpw41 circuitbpw41 remote controla1bbbc377bpw41 circuit application2x1n4148bpw41
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Phototransistor TIL81
Abstract: TIL81 Transistor BPX25 til100 Phototransistor bpx25 phototransistor Infrared phototransistor TO18 Phototransistor zm110 phototransistor and applications MRD300
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIONS OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash C ontrol, etc. ZM100 SERIES TO-18 HERMETIC ZM100/110, BPX25/29
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zm100zm100/110bpx25/29zm110+12bpx25zm210phototransistor til81til81transistor bpx25til100phototransistor bpx25phototransistorinfrared phototransistor to18phototransistor zm110phototransistor and applicationsmrd300
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TIL81
Abstract: Phototransistor TIL81 Phototransistor TIL100 lens photodiode phototransistor Phototransistor bpx25 Phototransistor zm110 Infrared phototransistor TO18 BPW41D ferranti
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIO N S OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc. ZM100 SER IES TO-18 HERM ETIC ZM100/110, BPX25/29
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zm100zm100/110bpx25/29zm110+13bpx25mrd310mrd370til81phototransistor til81phototransistortil100lens photodiode phototransistorphototransistor bpx25phototransistor zm110infrared phototransistor to18bpw41dferranti
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Measurement Techniques
Abstract: measurem TEMD5100X01 photodiode application luxmeter BPW20RF BPW34 application note
Contextual Info: Measurement Techniques www.vishay.com Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical
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31-jul-12measurement techniquesmeasuremtemd5100x01+3photodiode application luxmeterbpw20rfbpw34 application note
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 BPW34 osram BPW41N IR DATA phototransistor application lux meter photodiode application luxmeter pin configuration bpw34 BPW41N IR BPW20RF BPW21R osram
Contextual Info: Measurement Techniques Vishay Semiconductors Measurement Techniques INTRODUCTION VS = 80 V > VR max. The characteristics of optoelectronics devices given in datasheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical
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27-aug-08bpw34 application noteapplication note bpw34bpw34 osram+7bpw41n ir dataphototransistor application lux meterphotodiode application luxmeterpin configuration bpw34bpw41n irbpw20rfbpw21r osram
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near IR sensors with daylight filter
Abstract: light sensing circuit project BPW34 application note BPW20RF
Contextual Info: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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tekt5400stsks5400s2002/95/ec2002/96/ec+62011/65/eujs709anear ir sensors with daylight filterlight sensing circuit projectbpw34 application notebpw20rf
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BPW20RF
Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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bpv112002/95/ec2002/96/ec2011/65/eu+10js709a02-oct-12bpw20rfbpw34 osramphototransistor application lux meterbpw41bpw34 application notebpw20rf applicationbpw41n ir datawi41g
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BPW46
Abstract: BPW34 osram
Contextual Info: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power
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vslb39402002/95/ec2002/96/ec2011/65/eu+4js709a02-oct-12bpw46bpw34 osram
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BPW41 circuit application
Abstract: OSRAM IR emitter
Contextual Info: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability
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vsmg3700j-std-020aec-q1012002/95/ec+52002/96/ec2011/65/eujs709abpw41 circuit applicationosram ir emitter
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BPW34 application note
Contextual Info: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°
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vsms3700vemt3700j-std-020aec-q101+42002/95/ec2011/65/eujs709abpw34 application note
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
Contextual Info: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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vsmf47202002/95/ec2011/65/eujs709a+502-oct-12bpw34 application noteapplication note bpw34lux meter calibrationrb94
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BPW34 osram
Abstract: wi41g BPW34 application note
Contextual Info: VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: p = 850 nm
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vsmy1850x01aec-q101j-std-0202002/95/ec+62002/96/ec2011/65/eujs709abpw34 osramwi41gbpw34 application note
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OSRAM IR emitter
Abstract: BPW34 application note solar cell transistor infrared lux meter calibration application luxmeter
Contextual Info: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability
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vsmg2700j-std-020aec-q1012002/95/ec+82002/96/ec2011/65/eujs709aosram ir emitterbpw34 application notesolar cell transistor infraredlux meter calibrationapplication luxmeter
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phototransistor application lux meter
Abstract: BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor
Contextual Info: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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vemt4700vsml3710j-std-0202002/95/ec+132011/65/eujs709a02-oct-12phototransistor application lux meterbpw21application note bpw34 padosram icm 10bpw20rfbpw21r osrambpw34 osram80085smoke detector using phototransistorhigh speed uv phototransistor
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pin configuration bpw34
Abstract: APPLICATION NOTE BpW34 BPW34 smd Application lux meter BPW41 remote control VSMY2850
Contextual Info: VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology VSMY2850RG FEATURES VSMY2850G • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8
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vsmy2850rgvsmy2850gvemd2500x01j-std-020+8vsmy28502002/95/ec2011/65/eupin configuration bpw34application note bpw34bpw34 smdapplication lux meterbpw41 remote control
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bpw 75
Abstract: near IR photodiodes with daylight filter BPW 23 nf ir headphone BPW34 application note
Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability
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vsml3710vemt3700j-std-0202002/95/ec+82011/65/eujs709a02-oct-12bpw 75near ir photodiodes with daylight filterbpw 23 nfir headphonebpw34 application note
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BPW34 smd
Abstract: phototransistor application lux meter BPW20
Contextual Info: VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 94 8553 Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75
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vsmy3850j-std-0202002/95/ec2002/96/ec+52011/65/eujs709abpw34 smdphototransistor application lux meterbpw20
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lux meter chip
Abstract: IR Diodes BPW41N IR DATA 80085 short distance measurement ir infrared diode wi41g
Contextual Info: VSMY1850 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • Peak wavelength: λp = 850 nm • High reliability
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vsmy1850j-std-0202002/95/ec2002/96/ec+82011/65/eujs709alux meter chipir diodesbpw41n ir data80085short distance measurement ir infrared diodewi41g
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 BPW41 remote control
Contextual Info: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability
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vsmf37102002/95/ec2011/65/eujs709a+402-oct-12bpw34 application noteapplication note bpw34bpw41 remote control
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UA78HGSC
Abstract: SL490DP N82S100 TCA280A ne5534h UA78HGS mw RADIO RECEIVER IC zn414 TCA280A equivalent MM58174 ML929DP
Contextual Info: V o ltag e R eg ulator S electio n C hart Positive Three Terminal Regulators Output Current§ Package + 5V + 6V + 8V + 12V + 15V + 18V + 24V TO-92 LM78L05ACZ — — _ _ LM78L12ACZ LM78L15ACZ 0.1A .0 — — TO-92 LM340LAZ-5 _ _ LM340LAZ-12 LM340LAZ-15
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lm78l05aczlm78l12aczlm78l15aczlm340laz-5+16lm340laz-12lm340laz-15lm2931z5lm78l05achlm78l12achlm78l15achua78hgscsl490dpn82s100tca280ane5534hua78hgsmw radio receiver ic zn414tca280a equivalentmm58174ml929dp
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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aa113aa117aa119bav17+14bav18bav19bav20bav21cqx 87germaniumaeg thyristor t 558 ftda 2516bu208bf506la 4430bf963tda1086transistor bf 175
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TIL702
Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Contextual Info: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or
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lcc4230-depn4050til702til701+8til393-9til78 phototransistortil81til312 7 segment displaytil78til393til313til393-6
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