Phototransistor TIL81
Abstract: TIL81 Transistor BPX25 til100 Phototransistor bpx25 phototransistor Infrared phototransistor TO18 Phototransistor zm110 phototransistor and applications MRD300
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIONS OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash C ontrol, etc. ZM100 SERIES TO-18 HERMETIC ZM100/110, BPX25/29
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zm100zm100/110bpx25/29zm110+12bpx25zm210phototransistor til81til81transistor bpx25til100phototransistor bpx25phototransistorinfrared phototransistor to18phototransistor zm110phototransistor and applicationsmrd300
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TIL81
Abstract: Phototransistor TIL81 Phototransistor TIL100 lens photodiode phototransistor Phototransistor bpx25 Phototransistor zm110 Infrared phototransistor TO18 BPW41D ferranti
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIO N S OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc. ZM100 SER IES TO-18 HERM ETIC ZM100/110, BPX25/29
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zm100zm100/110bpx25/29zm110+13bpx25mrd310mrd370til81phototransistor til81phototransistortil100lens photodiode phototransistorphototransistor bpx25phototransistor zm110infrared phototransistor to18bpw41dferranti
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near IR sensors with daylight filter
Abstract: light sensing circuit project BPW34 application note BPW20RF
Contextual Info: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
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tekt5400stsks5400s2002/95/ec2002/96/ec+62011/65/eujs709anear ir sensors with daylight filterlight sensing circuit projectbpw34 application notebpw20rf
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BPW20RF
Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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bpv112002/95/ec2002/96/ec2011/65/eu+10js709a02-oct-12bpw20rfbpw34 osramphototransistor application lux meterbpw41bpw34 application notebpw20rf applicationbpw41n ir datawi41g
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BPW46
Abstract: BPW34 osram
Contextual Info: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power
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vslb39402002/95/ec2002/96/ec2011/65/eu+4js709a02-oct-12bpw46bpw34 osram
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BPW34 application note
Contextual Info: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°
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vsms3700vemt3700j-std-020aec-q101+42002/95/ec2011/65/eujs709abpw34 application note
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BPW34 application note
Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
Contextual Info: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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vsmf47202002/95/ec2011/65/eujs709a+502-oct-12bpw34 application noteapplication note bpw34lux meter calibrationrb94
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BPW34 osram
Abstract: wi41g BPW34 application note
Contextual Info: VSMY1850X01 Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • Peak wavelength: p = 850 nm
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vsmy1850x01aec-q101j-std-0202002/95/ec+62002/96/ec2011/65/eujs709abpw34 osramwi41gbpw34 application note
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BPW34 smd
Abstract: smd resistor 8606 BPW34 application note
Contextual Info: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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vsmf4710j-std-020aec-q1012002/95/ec+62002/96/ec2011/65/eujs709abpw34 smdsmd resistor 8606bpw34 application note
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OSRAM IR emitter
Abstract: BPW34 application note solar cell transistor infrared lux meter calibration application luxmeter
Contextual Info: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability
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vsmg2700j-std-020aec-q1012002/95/ec+82002/96/ec2011/65/eujs709aosram ir emitterbpw34 application notesolar cell transistor infraredlux meter calibrationapplication luxmeter
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phototransistor application lux meter
Abstract: BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor
Contextual Info: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation
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vemt4700vsml3710j-std-0202002/95/ec+132011/65/eujs709a02-oct-12phototransistor application lux meterbpw21application note bpw34 padosram icm 10bpw20rfbpw21r osrambpw34 osram80085smoke detector using phototransistorhigh speed uv phototransistor
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pin configuration bpw34
Abstract: APPLICATION NOTE BpW34 BPW34 smd Application lux meter BPW41 remote control VSMY2850
Contextual Info: VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology VSMY2850RG FEATURES VSMY2850G • Package type: surface mount • Package form: GW, RGW • Dimensions L x W x H in mm : 2.3 x 2.3 x 2.8
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vsmy2850rgvsmy2850gvemd2500x01j-std-020+8vsmy28502002/95/ec2011/65/eupin configuration bpw34application note bpw34bpw34 smdapplication lux meterbpw41 remote control
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bpw 75
Abstract: near IR photodiodes with daylight filter BPW 23 nf ir headphone BPW34 application note
Contextual Info: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 940 nm • High reliability
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vsml3710vemt3700j-std-0202002/95/ec+82011/65/eujs709a02-oct-12bpw 75near ir photodiodes with daylight filterbpw 23 nfir headphonebpw34 application note
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220v AC voltage stabilizer schematic diagram
Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122
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p390-ndp465-ndp466-ndp467-nd+14lng901cf9lng992cfbwlng901cfbwlng91lcfbw220v ac voltage stabilizer schematic diagramba 49182rjh 3047rjh 3047 equivalenta1458 optophilips ecg master replacement guidemosfet, rjh 3077sc1097philips ecg semiconductors master replacement guideelectronic ballast 40w using 13005 transistor
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