BPW 75 Search Results

BPW 40

Abstract: GEOY6643 GEOY6863
Contextual Info: Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT Lead Pb Free Product - RoHS Compliant BPW 34 B BPW 34 BS BPW 34 B BPW 34 BS Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich

BPW 40 pin connection in circuit

Contextual Info: BIAS 2 Watt Power Supply BPW 2 Series Data Sheet Single Vo or Dual (Vo & Vr) output BPW 2-08-00, -08-33, -08-50 BPW 2-14-00, -14-33, -14-50 The BPW Power Supply Module is an ideal solution for numerous control applications in lighting, sensing, smart building and power

Contextual Info: BIAS 1/2 Watt Power Supply BPW 0.5 Series Data Sheet Single Vo or Dual (Vo & Vr) output BPW 0.5-08-00, -08-33, -08-50 BPW 0.5-14-00, -15-33, -14-50 The BPW Power Supply Module is an ideal solution for numerous control applications in lighting, sensing, smart building and power

Contextual Info: BIAS 1 Watt Power Supply BPW 1 Series Data Sheet Single Vo or Dual (Vo & Vr) output BPW 1-08-00, -08-33, -08-50 BPW 1-14-00, -14-33, -14-50 The BPS Power Supply Module is an ideal solution for numerous control applications in lighting, sensing, smart building/home and power

Contextual Info: BPW 20R VlSfrlAY Vishay Telefunken Silicon PN Photodiode Description BPW 20R is a planar Silicon PN photodiode in a hermetically sealed short TO -5 case, especially de­ signed for high precision linear applications. Due to its extremely high dark resistance, the short cir­

Contextual Info: SIEMENS BPW 33 SURFACE MOUNT BPW 33S SILICON PHOTODIODE VERY LOW DARK CURRENT Characteristics TA=25°C Parameter Symbol Value Unit S nA/lx A -S m a x 75 (>35) 800 A 350 to 1100 nm A Lx W 7.34 2,71 x 2.71 mm2 Distance, C h ip S urface to C ase Surface H 0.5

p945

Abstract: transistor P945 GEOY6863 p945 transistor GEOY6643 Q62702-P945 BPW34BS
Contextual Info: Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT BPW 34 B BPW 34 BS Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 25 ns

BPW14A

Abstract: BPW14 BPW14C BPW13 FLU10 BPW13A bpw14b BPW 14 A 06 t127 BPW13C
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fl'tëOG'îb 00QÔ370 7 IAL6<S BPW 13 • BPW 14 TÏÏEU IFM IM iK I electronic Ovahvt Yfchnotogm Silicon NPN Epitaxial Planar Phototransistors Applications: Detector In electronic control and drive circuits Features: • Hermetically sealed case

sensor BPW34 application note

Abstract: BPW34 application note BPW34F BPW34 BPW34B UDT Sensors bpw 50 optical smoke sensor
Contextual Info: BPW-34 Lead Frame Molded Photodiodes APPLICATIONS FEATURES • IR Sensors • Bar Code Scanners • Color Analysis • Smoke Detectors • High Reliability • High Density Package • Rugged Resin Mold • Fast and Low Dark Current BPW-34 series are a family of high quality and reliability plastic encapsulated

90VAC

Contextual Info: BIAS Power BIAS Standby Supply Module - 1W BPW 1 Series Data Sheet The BPW 1 Standby Power Supply Module is an ideal replacement for current standby power applications in appliances and consumer electronics. This low-cost supply provides up to one watt of output power at 8 or 14 VDC Vo

J133

Abstract: Telefunken Electronic FLL100 a 4712 114144 BPW39 W-25 AL6G TD-325 COX-18
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fi'^OQ'ib OOOfiMlb 5 ■ AL66 BPW 39 ¥ LI FI!J1ÄIMelectronic ! CrMtMliKhnoipgtM Silicon NPN Epitaxial Planar Phototransistor Applications: Detector in electronic control and drive circuits Features: • Plastic case white clear

BPW76

Abstract: BPW76A BPW76B
Contextual Info: BPW 76 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics.

bpw uv photodiode

Abstract: BPW20 BPW20R
Contextual Info: TELEFUNKEN Semiconductors BPW 20 R Silicon PN Photodiode Description BPW20R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the

BPW77NB

Abstract: BPW77N BPW77NA
Contextual Info: TELEFUNKEN Semiconductors BPW 77 N Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10°

BPW21R

Abstract: BPW21 pn photodiode BPW2
Contextual Info: TELEFUNKEN Semiconductors BPW 21 R Silicon PN Photodiode Description 94 8394 BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the

PHOTOVOLTAIC CELL

Abstract: "PHOTOVOLTAIC CELL" bpw20 photovoltaic cell sensor photovoltaic sensor BPW 10 nf fotodiode 74138 DIN5033 0175A1
Contextual Info: BPW 20 'W Silizium-PN-Planar-Fotoelement/Fotodiode Silicon PN Planar Photovoltaic Cell/Photodiode Anwendung: Sensor für die Lichtmeßtechnik Application: Sensor for light m easuring purposes Besondere Merkmale: Features: • Für Fotodioden- und Fotoelem ent-Betrieb

GEOY6643

Abstract: Q62702-P76 PA 0016 pa 0016 equivalent
Contextual Info: Silizium-Fotodiode Silicon Photodiode BPW 33 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Sperrstromarm typ. 20 pA • DIL-Plastikbauform mit hoher Packungsdichte • Especially suitable for applications from

GEO06643

Abstract: Q62702-P76 BPW33 IR 33 S7535
Contextual Info: Silizium-Fotodiode Silicon Photodiode BPW 33 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Sperrstromarm typ. 20 pA • DIL-Plastikbauform mit hoher Packungsdichte Features • Especially suitable for applications from

BPW13A

Abstract: BPW13B BPW13C BPW13 950NM
Contextual Info: BPW 13 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW13 is a high speed silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal

bpw 82

Abstract: BPW82 M/BPW82
Contextual Info: BPW 82 TELEFUNKEN Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters lpy800nm .

BPW85

Abstract: BPW85A BPW85B BPW85C infrared 950nm
Contextual Info: BPW 85 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible

BPW33

Contextual Info: SIEMENS Silizium-Fotodiode Silicon Photodiode BPW 33 Photosensitive area 2.65 mm x 2.65 mm CO Approx. weight 0.1 g G€006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Speziell geeignet für Anwendungen im

BPW83

Abstract: LARGE SURFACE AREA PHOTODIODE filter BPW 61
Contextual Info: BPW 83 TELEFUNKEN Semiconductors Silicon PIN Photodiode Description BPW83 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters lpy800nm .

BPW16N

Abstract: CQY 24
Contextual Info: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are