BPW 41 Search Results

BPW 40 pin connection in circuit

Contextual Info: BIAS 2 Watt Power Supply BPW 2 Series Data Sheet Single Vo or Dual (Vo & Vr) output BPW 2-08-00, -08-33, -08-50 BPW 2-14-00, -14-33, -14-50 The BPW Power Supply Module is an ideal solution for numerous control applications in lighting, sensing, smart building and power

Contextual Info: BIAS 1/2 Watt Power Supply BPW 0.5 Series Data Sheet Single Vo or Dual (Vo & Vr) output BPW 0.5-08-00, -08-33, -08-50 BPW 0.5-14-00, -15-33, -14-50 The BPW Power Supply Module is an ideal solution for numerous control applications in lighting, sensing, smart building and power

Contextual Info: BIAS 1 Watt Power Supply BPW 1 Series Data Sheet Single Vo or Dual (Vo & Vr) output BPW 1-08-00, -08-33, -08-50 BPW 1-14-00, -14-33, -14-50 The BPS Power Supply Module is an ideal solution for numerous control applications in lighting, sensing, smart building/home and power

BPW77B

Abstract: BPW77A BPW77 bpw 50 bpw 41 Telefunken Electronic BPW76A u 110 telefunken BPW 64 bpw 75
Contextual Info: TELEFUNKEN ELECTRONIC i 17E D • OOOfiMbM S BPW 76 • BPW 77 ‘DTiSOJUFtlij&aCSI&fl electronic Cr*atN*f*chnûJoçj*s Silicon NPN Epitaxial Planar Phototransistors Applications! Detector in electronic control and drive circuits Features: • Hermetically sealed case

sensor BPW34 application note

Abstract: BPW34 application note BPW34F BPW34 BPW34B UDT Sensors bpw 50 optical smoke sensor
Contextual Info: BPW-34 Lead Frame Molded Photodiodes APPLICATIONS FEATURES • IR Sensors • Bar Code Scanners • Color Analysis • Smoke Detectors • High Reliability • High Density Package • Rugged Resin Mold • Fast and Low Dark Current BPW-34 series are a family of high quality and reliability plastic encapsulated

J133

Abstract: Telefunken Electronic FLL100 a 4712 114144 BPW39 W-25 AL6G TD-325 COX-18
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fi'^OQ'ib OOOfiMlb 5 ■ AL66 BPW 39 ¥ LI FI!J1ÄIMelectronic ! CrMtMliKhnoipgtM Silicon NPN Epitaxial Planar Phototransistor Applications: Detector in electronic control and drive circuits Features: • Plastic case white clear

BPW 14 A

Contextual Info: Bias Power BPW Wide Input Range Line 90 to 308 VAC Modular Switching Power Supplies -30° to 70°C Starting and Operating Temperature Addressing the North American 277 VAC commercial lighting standard Input Voltage: 90-308 VAC Part Number 2-watt, actual size

BPW34B

Abstract: BPW 14 A bpw34
Contextual Info: BPW-34 Plastic Molded - Industry Standard Responsivity at λp λp nm (A/W) typ. min. typ. 0.55 0.60 0.15* 0.20* Capacitance (pF) Dark Current (nA) 0V 1 MHz -10V 1MHz typ. typ. typ. max. 65 12 2 30 -10 V NEP √Hz) (W/√ " FEATURES • High Reliability

peak spectral response 900 nm photo detector

Contextual Info: Tem ic BPW46L S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPW 46L is a high speed and high sensitive PIN photo­ diode in a flat side view plastic package. Due to its waterclear epoxy the device is sensitive to visible and in­ frared radiation.

IR remote control

Abstract: BPW41D bpw41 ir diode remote control for remote control for garage OE29 ir remote 1040nm
Contextual Info: BPW41D INFRA-RED PHOTODETECTOR The BPW 41D is a large area, silicon p .i.n . p h o to d io d e having a lo w ju n ctio n capacitance and co n se qu e n tly capable o f fa s t response tim es. The active chip is packaged in a plastic m oulding w h ich contains a near infra-red tran sm issive filte r such th a t th e device is sensitive to infra-red

BPW 64 photo

Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
Contextual Info: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package

bpw 104

Abstract: foto transistor k 4110 BPW 34 photo K 3505 transistor transistor 309 BPW 14 A IC 314 BP 104 FAS foto transistor
Contextual Info: SI-FOTODETEKTOREN TYPENÜBERSICHT S -F I SILICON PHOTODETECTORS OTODETEKTOREN, OPTISCHE SENSOREN 1. Foto IC für Fernsteuerung SFH 5110 SUMMARY OF TYPES (S PHOTODETECTORS, OPTICAL SENSORS) 1. Photo IC for Remote Control SFH 5410 SFH 5111 2. Fotodetektoren in SMT

sil6400

Abstract: STS7500 s520 SSF4500 s7302
Contextual Info: Temic S e m i c « n il u c t o r s Genera] Information Alphanumeric Index T>pe . Type . BP 1 0 4 . . 6 .2 0 7 B P W 8 5 . . . . 320 T E M T 2 2 0 0 . . . 4 ,3 9 8 TSIP7601 . . . . B P V 1 0 . . 5 ,2 0 3

BPW84

Abstract: S288P BPW75 BPW87 BPW28 BPW86 LT 5239 H BPW47B BPW41N IR bpw77
Contextual Info: TEL E FU NK EN E L E C T R O N I C 4ME T> m ÛTEOCnti 0D1117D 3 D1ALGG Photo Detectors Phototransistors in Clear Plastic Package Phototransistors with Filter M atched for G a A s IR ED s in Plastic Package Package Type • C h a ra c te ristic s Photo sensitive

IR TIL81

Abstract: TIL81 Phototransistor TIL81 2 pin phototransistor diode TIL81 TIL100 PHOTOTRANSISTOR 3 PIN bpx25 phototransistor application circuit Phototransistor bpx25 phototransistor
Contextual Info: BPW41D INFRA-RED PHOTODETECTOR The B P W 4 1 D is a large: area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The active chip is packaged in a plastic moulding which contains a near infra-red transmissive filter such that the device is sensitive to infra-red radiation only, and

TRANSISTOR SMD MARKING CODE 3401

Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
Contextual Info: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111

S288P

Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Contextual Info: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of

TRANSISTOR SMD MARKING CODE 3401

Abstract: DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code
Contextual Info: Infrared Components ge 88 - 92 107 108 Infrared Components Summary of Types Silicon Photodetectors For moreComponents Infrared detailed product Summary information of Types andSilicon technical Photodetectors datasheets, please visit http://catalog.osram-os.com

BPW40

Abstract: bpw 50 NJU7029 NJU7009V
Contextual Info: NJU7029 Low Noise, Rail-to-Rail Output Dual CMOS Operational Amplifier • GENERAL DESCRIPTION The NJU7029 is a CMOS operational amplifier that feature low noise as VNI=13V/√Hz typ. @f=1kHz, low operating voltage. FET input devices provide very low input bias current and

diode 9306

Abstract: FA 4301 SFH 9500 SFH 5110 bpx 48 BP104 SFH 4552 SFH9240 GEOY6972 GPXY6992
Contextual Info: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS Maßbilder in mm inch Outline Drawings dimensions in mm (inch) 0.6 (0.024) 0.4 (0.016) SFH 5110, SFH 5111 Figure 2 6.1 (0.240) 5.9 (0.232)

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: NJU7029 Low Noise, Rail-to-Rail Output Dual CMOS Operational Amplifier GENERAL DESCRIPTION The NJU7029 is a dual CMOS operational amplifier with a low noise of VNI=13nV/ Hz typ. @f=1kHz , Rail-to-Rail output and low operating voltage. It offers a single supply voltage operation

BPW85

Abstract: BPW85A BPW85B BPW85C Phototransistor bpw 80
Contextual Info: BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten