BPW 104 Search Results

bpy 79

Abstract: irl 3034 bestellnummern-verzeichnis Q62702-P1187 bf 478 Q62702-P935 Q62607-S61 sfh siemens SFH415-T siemens Bestellnummern-Verzeichnis
Contextual Info: SIEMENS Typ ‘ vorher Type ('formerly) BP 103 BP 103-2 BP 103-3 BP 103-4 BP 103-5 BP 104 F (*BP 104) BP 104 FS BP 104 S BPW21 BPW 33 BPW 34 BPW 34 BPW 34 BPW 34 BPW 34 BPW 34 BPW 34 BPX 38 B F FA FAS FS S BPX 38-2 BPX 38-3 BPX 38-4 BPX 38-5 BPX 43 BPX 43-2

bpw 104

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT BPW 34 F BPW 34 FS LO o co 4.0 3.7 0.8, 0.6 0.5 0.3 spacing Flash area Radiant sensitive area Cathode GE006643 Approx. weight 0.1 g

Contextual Info: BPW 20R VlSfrlAY Vishay Telefunken Silicon PN Photodiode Description BPW 20R is a planar Silicon PN photodiode in a hermetically sealed short TO -5 case, especially de­ signed for high precision linear applications. Due to its extremely high dark resistance, the short cir­

bpw 104

Abstract: GEO06643 GEO06863 Q62702-P1604 Q62702-P929 bpw+104 BPW34F
Contextual Info: 0.8 0.6 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 F BPW 34 FS feo06075 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT 0.6 0.4 0.8

bpw 104

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT BPW 34 F BPW 34 FS | 4;3|- o tíc Ñ CO U 5 \ • in * o ■L - J U °'20L 0.35 M D 1- 0.5 5.08mm spacing -Flash area Radiant sensitive area

bpw 104

Abstract: Q62702-P1604
Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit Tagesl ichtsperrf iIter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT BPW 34 F BPW 34 FS IT hs o Chip position 03 CD CD 2.65 mm x 2.65 r GE006863 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

siemens 30 090

Contextual Info: SIEMENS Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT 7771— Ip ] Approx. BPW 34 BPW 34 S Photosensitive area 2.65 mm x 2.65 mm weight 0.1 g geoo6643 1 .1 i Chip posit O i r i .9 Ò .0 .1 CO I r f ’ «Ni-'-: i t n hf 6.7 R O

FA JO2

Abstract: 34FAS BPW34FA 34-FAS
Contextual Info: SIEMENS BPW 34FA SURFACE MOUNT BPW 34FAS Silicon PIN Photodiode Daylight Filter, 830-880 nm Range Dimensions in inches mm .2 1 2 (5 .4 ) .012 (0.3) I i . .157 (4 ) flash area i l l .067(1.7) .157(4.0) ' T T . 0 5 9 (1 .5 ) .145(3.7) .0 6 7 (1 .7 ) .0 5 9 (1 .5 )

FP3000

Abstract: BPW34F BP104 5M60 GE 43 TVS
Contextual Info: SIEMENS BPW 34F BPW 34FS SURFACE MOUNT Daylighl Filter Silicon PIN Photodiode D im e n sio n s in in ch e s m m .157(4) .145(3.7) .212(5.4) .193 (4.9) •177(4.5) .169.(4.3) Cathode .024 (.6) .016Í.4) j - i — . i_ _ L T .086(2.2) .031 ( .8) ‘ .024 ( ■)

bpw 104

Abstract: silicon PIN photodiode with daylight filter Q62702-P1604
Contextual Info: BPW 34 FS feo06861 Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight Filter Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale ● Speziell geeignet für Anwendungen

SIEMENS Phototransistors BPY

Abstract: 2108a siemens dioden SFH-506 SFH100 BPW21 300FA 2108 A SFH 314 SFH-10
Contextual Info: Silicon Photodetectors Si-Fotodetektoren Summary of Types Typenübersicht 1. Integrierter Empfänger Integrated Receiver 2. Fototransistoren Phototransistors ♦ SFH 506 BPX 81 3. SFH 300/FA SFH 313/FA SFH 314/FA BP 103 SFH 302 SFH 305 BPX 83 BP 104 F BPW 34 FA

BPW34F

Abstract: siemens SFH nm Ni 120
Contextual Info: SIEMENS BPW 34FA SILICON PIN PHOTODIODE DAYLIGHT FILTER 830-880 nm RANGE Package Dimensions in Inches mm Chip position Cathode Photosensitiv« area 104 x .104 (2.65 x 2.65) ± .073(1.85) .057 0 .4 5 ) FEATURES t=L_P * Silicon Planar PIN Photodiode T * Daylight Fitter

BPW76

Abstract: BPW76A BPW76B
Contextual Info: BPW 76 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics.

bpw uv photodiode

Abstract: BPW20 BPW20R
Contextual Info: TELEFUNKEN Semiconductors BPW 20 R Silicon PN Photodiode Description BPW20R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the

BPW21R

Abstract: BPW21 pn photodiode BPW2
Contextual Info: TELEFUNKEN Semiconductors BPW 21 R Silicon PN Photodiode Description 94 8394 BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the

BPW13A

Abstract: BPW13B BPW13C BPW13 950NM
Contextual Info: BPW 13 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW13 is a high speed silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal

BPW85

Abstract: BPW85A BPW85B BPW85C infrared 950nm
Contextual Info: BPW 85 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible

BPW*34

Abstract: BPW34 application note bpw 50 BPW34 BPW 34 photo
Contextual Info: TELEFUNKEN Semiconductors BPW 34 Silicon PIN Photodiode Description The BPW34 is a high speed and high sensitive PIN photodiode in a miniature flat plastic package. Its top view construction makes it ideal as a low cost replacement of TO–5 devices in many applications.

BPW16N

Abstract: CQY 24
Contextual Info: TELEFUNKEN Semiconductors BPW 16 N Silicon NPN Phototransistor Description BPW16N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are

bpw 104

Abstract: a850
Contextual Info: BPW 34S E9087 SIEMENS FEATURES • Especially suitable tor applicatons from 400 nm toitOOnm • Short switching time (typ. 20 ns) • Suitable for vapor-phase and IR-reflow soldering • Reverse guilwing Characteristics Ta =25°C, standard light A, T=2856k

CQY 26

Abstract: BPW17N diode 8308
Contextual Info: TELEFUNKEN Semiconductors BPW 17 N Silicon NPN Phototransistor Description BPW17N is a silicon NPN epitaxial planar phototransistor in a miniature plastic case with a ± 12° lens. With a lead center to center spacing of 2.54mm and a package width of 2.4mm the devices are

BPW24R

Abstract: diode 8409
Contextual Info: TELEFUNKEN Semiconductors BPW 24 R Silicon PIN Photodiode Description BPW24R is a high sensitive silicon planar photodiode in a standard TO–18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The

BPW14

Abstract: bpw 104 BPW14N BPW14NA BPW14NB BPW14NC 1BPW
Contextual Info: TELEFUNKEN Semiconductors BPW 14 N Silicon NPN Phototransistor Description BPW14N is a high speed silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens, featuring a viewing angle of ±10° makes it insensible to ambient straylight. A base

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight-Cutoff Filter Reverse Gullwing Photosensitive area 2.65 mm x 2.65 mm BPW 34 FS (E9087) en Cathode lead CD O GEO06916 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.