BONDING OF DRAIN WIRE Search Results

MOSFETs

Abstract: Continuous drain AOD452 A1024* transistor soc fuses TRANSISTOR aoD452 thermal SIMULATION AOD452 Equivalent mosfet THEORY AND APPLICATIONS
Contextual Info: Power MOSFET Continuous Drain current rating and Bonding wire limitation Fei Wang , Kai Liu, Anup Bhalla Abstract Power MOSFET datasheets will usually show maximum values for continuous drain current Id, on the first page of datasheets. For bottom exposed part such as DPAK, TO220, D2PAK, there is always a note besides Id rating saying that Id is

E024A

Abstract: E018A E240D E240B E960B E040A WIRES bonding E025A E1200A
Contextual Info: Excelics Semiconductor, Inc. Recommended Wire Bonding For Excelics FETs E018A E024A Drain Bonding Wire Grounded Source Bonding Wires Gate Bonding Wire E025A E030C Drain Bonding Wire Drain Bonding Wires Grounded Source Grounded Source Bonding Wires Bonding Wires

tgf2023-2-20

Contextual Info: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 58% Maximum PAE

Contextual Info: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 53% Maximum PAE

HMMC-5034

Abstract: HMMC-5040 GaAs MMIC ESD, Die Attach and Bonding Guidelines agilent HMMC
Contextual Info: Agilent HMMC-5034 37–43 GHz Amplifier Data Sheet TC926 Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5034 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 37 GHz to 42.5 GHz range. At 40 GHz it

7400A

Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions

5032

Abstract: Die Attach and Bonding Guidelines
Contextual Info: Agilent HMMC-5032 17.7-32 GHz Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. It provides 22 dBm of output power and 8 dB of small-signal gain from a small easy-to-use

Contextual Info: Avago HMMC-5032 17.7 – 32 GHz Amplifier Data Sheet Chip Size: 1.4 x 0.78 mm 55.1 x 30.7 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within

15 watt power amplifier " 15 GHz"

Abstract: HMMC-5032 HMMC-5040 HMMC-5618 GaAs MMIC ESD, Die Attach and Bonding Guidelines long range gold detector circuit diagram Die Attach and Bonding Guidelines
Contextual Info: Agilent HMMC-5032 17.7-32 GHz Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. It provides 22 dBm of output power

Contextual Info: 17.7– 32 GHz Amplifier Technical Data HMMC-5032 Features • 22 dBm Output P -1 dB • 8 dB Gain • 50 Ω Input/Output Matching • Small Size • Bias: 4.5 Volts, 250 mA Description The HMMC-5032 is a MMIC power amplifier designed for use in wireless transmitters that operate

d2460

Abstract: HMMC-5033 HMMC-5040 HMMC-5618 agilent HMMC
Contextual Info: Agilent HMMC-5033 17.7–32 GHz Power Amplifier Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: Description The HMMC-5033 is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. At 28 GHz

HMMC-5033

Contextual Info: Avago HMMC-5033 17.7– 32 GHz Power Amplifier Data Sheet Chip Size: 2.74 x 1.31 mm 108 x 51.6 mils Chip Size Tolerance: ±10 µm (±0.4 mils) Chip Thickness: 127 ± 15 µm (5.0 ± 0.6 mils) Description The HMMC-5033 is a MMIC power amplifier designed for use in wireless transmitters that operate within

Contextual Info: 17.7– 32 GHz Power Amplifier Technical Data HMMC-5033 Features • 26 dBm Output P -1 dB at 28 GHz • High Gain: 18 dB • 50 Ω Input/Output Matching • Small Size Description The HMMC-5033 is a MMIC power amplifier designed for use in wireless transmitters that operate

Contextual Info: 17.7– 32 GHz Power Amplifier Technical Data HMMC-5033 Features • 26 dBm Output P -1 dB at 28 GHz • High Gain: 18 dB • 50 Ω Input/Output Matching • Small Size Description The HMMC-5033 is a MMIC power amplifier designed for use in wireless transmitters that operate

bonding

Abstract: VG-50
Contextual Info: Application Note for Dual-Gate FETs Bonding Diagram bonding wires are 1-mil diameter Au wires Drain Bonding Wire "Gate 2" Bonding Wires (2 plcs, 1 wire per pad) Source Bonding Wires (2 plcs, 2 wires per pad) Gate Bonding Wire Single Bias Configuration Dual Bias Configuration

LP0701

Contextual Info: LP0701 Die Specification Pad Layout 1 2 3 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 50 70 11 ± 1.5 None 1 (mils) LP0701 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

Contextual Info: HMC-APH634 v00.0110 LINEAR & POWER AMPLIFIERS - CHIP 3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features This HMC-APH634 is ideal for: High Gain: 12 dB • Short Haul / High Capacity Links High P1dB: +19 dBm • Wireless LAN Bridges

HMC-APH634

Abstract: MMIC POWER AMPLIFIER hemt
Contextual Info: HMC-APH634 v00.0110 Linear & Power Amplifiers - Chip 3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features This HMC-APH634 is ideal for: High Gain: 12 dB • Short Haul / High Capacity Links High P1dB: +19 dBm • Wireless LAN Bridges

Contextual Info: HMC-APH634 v00.0110 Linear & Power amPLifiers - ChiP 3 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Typical Applications Features This hmC-aPh634 is ideal for: high Gain: 12 dB • short haul / high Capacity Links high P1dB: +19 dBm • wireless Lan Bridges

TP0606

Contextual Info: TP0606 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP0606 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

DN3545

Contextual Info: DN3545 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) DN3545 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

VN0606

Contextual Info: VN0606 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0606 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

TN2501

Contextual Info: TN2501 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2501 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

VN0109

Contextual Info: VN0109 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0109 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain