BOND WIRE GOLD Search Results

MXP400X

Abstract: 7400 family bonder 150-degree
Contextual Info: Application Note - MXP400x Wire bond InGaAs/InP PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS W W W. Microsemi .COM Guideline for wire bond to MXP400x bare die. Recommend Wedge Bond used. Wedge detail informations: * 45 degee wire feed angle. * .0015 in. hole size.

702 sot23

Abstract: 1N4448W13F BAV99-7-05-F sot 23 70.2 MMBT3906R BZT52C6V8 DVRN6056
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1116 Contact Date: Implementation Date: Alert Category: Alert Type: September 16, 2008 December 15, 2008 Discrete Semiconductor Bond Wire Change PCN #: PCN #: 1116 TITLE COPPER BOND WIRE IMPLEMENTATION IMPACT None DESCRIPTION OF CHANGE

FMMT593TA

Contextual Info: PRODUCT CHANGE NOTICE Initial DCS/PCN-1155 Rev00 Final Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: December 11, 2009 March 11, 2010 Discrete Semiconductor Bond Wire Change PCN #: 1155 Rev00 TITLE COPPER BOND WIRE IMPLEMENTATION IMPACT

Contextual Info: RFLW 5N www.vishay.com Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.050" x 0.050" FEATURES • High frequency • Wire bond assembly • Small size: 0.050" x 0.050" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF

Contextual Info: RFLW 3N www.vishay.com Vishay Electro-Films High Frequency Wire Bondable RF Spiral Inductor, 0.030" x 0.030" FEATURES • High frequency • Wire bond assembly • Small size: 0.030" x 0.030" x 0.020" • Low DCR, high Q • Low parasitic capacitance, high SRF

4780

Abstract: CDSOT236 40770 26.690
Contextual Info: MATERIAL DECLARATION SHEET Material Number CDSOT236 Series Product Line Diode Products Compliance Date 1 Jan 2006 RoHS Compliant Yes No. 1 2 3 4 Construction Element subpart Lead Frame Die Gold Bond Wire Silver Paste MSL Homogeneous Material Lead Frame Silicon

Contextual Info: TERMINATION 50 WATTS CVD DIAMOND, BENT TAB DATA SHEET PART NUMBER: CT0505DTB FEATURES Small Size – Light Weight Highest Thermal Performance Possible Excellent Peak Power Capability Rugged Passivated TaN Film Moisture Resistant Pure Gold Input Pads Wire Bond or Solderable

4780

Abstract: CDSC706-T05C silver ag wire Bond
Contextual Info: MATERIAL DECLARATION SHEET Material # CDSC706 Series Product Line ESD Protection Date 1/1/2007 RoHS Compliant Yes COMPONENT DETAILS No. Construction element Material group Material weight [g] 1 Lead Frame Lead Frame 0.002570 2 Wafer Silicon 0.001434 3 Gold Bond wire

power inductor markings

Contextual Info: PSC Vishay Electro-Films RF Spiral Inductor for Wire Bonded Assemblies FEATURES • Wire bond assembly • Small size: 45 mils x 45 mils x 10 mils • Low DCR, high Q • Low parasitic capacitance, high SRF APPLICATIONS • RF choking for DC biasing • RF tuning circuits

Contextual Info: PSC www.vishay.com Vishay Electro-Films High Frequency RF Spiral Inductor for Wire Bonded Assemblies FEATURES • Wire bond assembly • Small size: 45 mils x 45 mils x 10 mils • Low DCR, high Q • Low parasitic capacitance, high SRF APPLICATIONS • RF choking for DC biasing

CDSOT23

Abstract: 4780
Contextual Info: MATERIAL DECLARATION SHEET Material Number CDSOT23 Series Product Line Diode Products Compliance Date 1 Jan 2006 RoHS Compliant Yes No. Construction Element subpart MSL Homogeneous Material 1 Lead Frame Lead Frame 2 Die Silicon 3 4 Gold Bond Wire Silver Paste

WBCR02750000F

Abstract: BCR50000FKAHWS
Contextual Info: BCR Vishay Electro-Films CHIP RESISTORS Thin Film, Back-Contact Resistor FEATURES • Wire bondable Product may not be to scale • Only one wire bond required • Small size: 0.020 inches square • Resistance range: 10 Ω to 1 MΩ • Oxidized silicon substrate for good power dissipation

Contextual Info: BCR Vishay Electro-Films CHIP RESISTORS Thin Film, Back-Contact Resistor FEATURES • Wire bondable Product may not be to scale • Only one wire bond required • Small size: 0.020 inches square. • Resistance range: 10 Ω to 1 MΩ • Oxidized silicon substrate for good power dissipation

WBCR02750000F

Abstract: bcr resistor bcr efi ElectroFilm
Contextual Info: BCR Vishay Electro-Films CHIP RESISTORS Thin Film, Back-Contact Resistor FEATURES • Wire bondable Product may not be to scale • Only one wire bond required • Small size: 0.020 inches square • Resistance range: 10 Ω to 1 MΩ • Oxidized silicon substrate for good power dissipation

Superbright LEDs

Abstract: cree c430 Gan on silicon substrate C430 C430-CB230-E1000 OS4000
Contextual Info: G•SiC Technology SuperBright LEDs C430-CB230-E1000 The Leader in Silicon Carbide Solid State Technology Features Applications High Performance – 650 µW 465nm • Segmented Displays • Single Wire Bond Structure • High Resolution Video Displays

cree uv LED

Abstract: cree ultraviolet LED FLUX UV 395nm 405nm LED white C395 C405 CXXX-MB290-E400 OS4000 UV led 200 nm peak wavelength 405nm LED
Contextual Info: G•SiC Technology Ultraviolet LEDs CXXX-MB290-E400 The Leader in Silicon Carbide Solid State Technology Features • Applications High Performance – 12.0mW 395nm UV – 12.0mW (405nm) UV • Automotive Dashboard Lighting • Single Wire Bond Structure

Contextual Info: Leadless Quad Mixer Schottky EBAlpha Barrier Diodes DME3481-00, DMF3480, DMJ3483-00 Features For Microwave MIC Assembly & Automated High Volume Manufacturing Lines Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly Three Barrier Heights for Optimized Mixer

Contextual Info: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector

cree package structure

Abstract: C460 C470 C525 CXXX-CB230-E1000 OS4000 Superbright LEDs Cree SiC blue
Contextual Info: G•SiC Technology SuperBright LEDs CXXX-CB230-E1000 The Leader in Silicon Carbide Solid State Technology Features Applications High Performance – 1.3 mW 460, 470nm – 650µW (525nm) • Communication Handsets • Backlighting • Single Wire Bond Structure

1521e

Abstract: HSMX-H690 HEWLETT-PACKARD HSMD-H670 HSMD-H690 HSMG-H670 HSMG-H690 HSMS-H670 HSMS-H690 HSMX-H670
Contextual Info: H Surface Mount Flip Chip LEDs Technical Data HSMX-H670 Series HSMX-H690 Series Features Description • Improved Reliability Through Elimination of Internal Wire Bond • -40 to 85°C Operating Temperature Range • Small Size • Industry Standard Footprint

Contextual Info: WL^ñ HEW LETT • æ l PACKARD Surface Mount Flip Chip LEDs Technical Data HSMX H670 Series HSMX-H690 Series Features * Improved Reliability Through Elimination of Internal Wire Bond * -40 to 85°C Operating Temperature Range * Small Size * Industry Standard Footprint

Contextual Info: Thn% WLZM HP AECWKLAERTDT Surface Mount Flip Chip LEDs Technical Data HSMx-H670 Series HSMx-H690 Series Features • Improved Reliability Through Elimination of Internal Wire Bond • -40 to 8 5 ^ Operating Temperature Range • Small Size • Industry Standard Footprint

C460MB290-0105

Abstract: C460MB290-0106 C470MB290-0107 C470MB290-0108 C470MB290-0109 OS4000
Contextual Info: G•SiC Technology MegaBright® Plus LEDs Cxxx-MB290-S0100-Plus Features • • • Applications ® MegaBright Plus Performance – 12.0mW min Blue • Outdoor LED Video Displays • Automotive Dashboard Lighting Single Wire Bond Structure • White LEDs

180 Degree hybrid ku band

Contextual Info: Universal Chip Mixer and 0 3 Alpha Detector Schottky Barrier Diodes t,.- , „• CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector