BL241GG Search Results

Contextual Info: MwT-A1 12 GHz High Gain GaAs FET M ic r o w a v e T e c h n o l o g y rr • • • • • 10 dB GAIN AT 12 GHz EXCELLENT FOR FEEDBACK AMPLIFIER APPLICATIONS 100 MHz TO 12 GHz 0.3 MICRON REFRACTORY METALVGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE

Contextual Info: M ic r o W ave T MPS-093011 LINEAR AMPLIFIER MODULE echnology FEATURES APPLICATIONS • • • • • • • • • • • • • Covers Typical Cellular Frequencies Frequency Range of 800 MHz to 1000 MHz Single Positive Supply Operation 1 W Output Power typical

Contextual Info: MI CR O W A V E TECHNOLOGY bfc,E D • b l 2 4 1 0 0 0 0 0 0 3 0 4 1T3 « N R W V MwT-13 18GHz HIGH POWER GaAs MESFETCHIP MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES l- 1 • +27 dBm P-1 dB AT 12 GHz

Contextual Info: PRELIMINARY MPS-202708-85 500 TO 2000 MHz SELF-BIASED GaAs FET AMPLIFIER MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +39 dBm TYPICAL IP3 • +27.0 dBm TYPICAL P1dB • 10.5 dB TYPICAL GAIN • +12 VOLT OPERATION