BL24100 Search Results

Contextual Info: bbE T> niCROüJAVE TECHNOLOGY • bl24100 QGGGBMS 71b « l IR li lV MwT-0208-101DG M m 2-8 GHz MMIC AMPLIFIER MODULE i MICROWAVE TECHNOLOGY 4 2 6 8 S olar W a y Frem ont, CA 9 4 5 3 8 5 1 0 -6 5 1 -6 7 0 0 F A X 5 1 0 -6 5 1 -2 2 0 8 28 dB TYPICAL SMALL SIGNAL GAIN

SU25

Abstract: SU50B10LS
Contextual Info: MICROWAVE TECHNOLOGY bb E D • bl241DD DQQD4E1 lb 3 HMRIilV SST SERIES SU/S VHF/UHF SILICON POWER FETS 10 TO 120 WATTS, 10MHz-500MHz MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 lds[A] FEATURES • N-CHANNEL JFET, DEPLETION MODE

MwT-173

Abstract: MWT-17
Contextual Info: MICROWAVE V bhE D TECHNOLOGY j • b l^ M lD D □□□□25b U IIRIilV MwT -1 F T M U =103 ■ 12 GHz High Gain GaAs FET . MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES • 10 dB GAIN AT 12 GHz • EXCELLENT FOR FEEDBACK AMPLIFIER

Contextual Info: NICROUAVE bbE D TECHNOLOGY • bl541DD □□□□552 T75 HMRIilV MwT - H4 W 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — t50l— • 0.9 dB NOISE FIGURE AT 12 GHZ

Contextual Info: M ic r o W ave T MPS-093011 LINEAR AMPLIFIER MODULE echnology FEATURES APPLICATIONS • • • • • • • • • • • • • Covers Typical Cellular Frequencies Frequency Range of 800 MHz to 1000 MHz Single Positive Supply Operation 1 W Output Power typical

Contextual Info: niCROIilAVE TECHNOLOGY bbE D • blZHlOD □□□□37T OT^ «MRÜIV MwT-0618-102DG 6-18 GHz MMIC AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 15.0 dB TYPICAL SMALL SIGNAL GAIN ' 1 9:1 t y p ic a l VSWR

Contextual Info: MwT-13 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o lo g y +28 dBm P-1 dB AT 12 GHz 7 dB GAIN AT 12 GHz HIGH THIRD ORDER INTERCEPT 0.3 MICRON REFRACTORY METAUGOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION 1200 MICRON GATE WIDTH n P J — ^ mm iVYi

Contextual Info: MICROWAVE TECHNOLOGY bbE D • L.1241DD DDDD3DG 5 5 6 ■ NRblV MwT -12 GP / SP / HP 18GHz HIGH POWER GaAs FETCHIP kàâ kM MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • 0.5 WATT POWER OUTPUT AT 12 GHZ • +37 dBm THIRD ORDER INTERCEPT

Contextual Info: MICROlilAVE TECHNOLOGY bbE D • hlEMlOO G0GG272 Öh3 «MRlilV M w T - A7 18 GHz High Gain, Low Noise GaAs FET MicroWave Technology r i 4268 solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES r» i *+ r- • { \ vj L U L * • HIGH AVAILABLE GAIN W HEN BIASED FOR LOW -NOISE

SLAM0122

Abstract: SLAM-0122
Contextual Info: MICROÜJAVE TECHNOLOGY y bbE D ' . 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 + I • 50 WATT ULTRA LINEAR OPERATION 11.05T z n ° 1/TI D2 SL *M 01 IG1 T • +58 dBm TOIP (THIRD ORDER INTERCEPT • PUSH-PULL DEVICE 0.39 (9.9) 22 • BROADBAND (2 TO 32 MHz)