BL T29 Search Results

Contextual Info: C R L H B W CA91C014 ' VMEbusAVICS CONTROL CIRCUIT ACC • Full VMEbus system controller functions • Auto-ID slot Identification • Automatic VMEbus SYSCON identification • Bus Isolation (Bl-mode ) controller • Multiple VMEbus request and release options

Contextual Info: KM681000BL/BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION Pin Nam e ? —? p ÒÒ OOp OOcolt Pin Function A 0 -A 16 Address Inputs We Write Enable input CS1, CS2 Chip Seet Input ÔE 1/01-1/08 uuuuyuyuyuuuyuuu PIN CONFIGURATION Top Views

ma6351

Abstract: LE-24T ZO 607MA A82496 290446 EM 5135 diode 522110 jp 486TM 241429 dm4021
Contextual Info: INTEL CORP -CUP/PRPHLSJ S7E D • 4 fl2 bl 7 5 01522147 t»23 ■ in te l Pentium Processor User's Manual Volume 2: 82496 Cache Controller and 82491 Cache SRAM Data Book NOTE: The Pentium™ Processor User's Manual consists of three books: Pentium™ Processor Data Book, Order Number 241428; the

CSG324

Abstract: transistor bl p89 bl p76 transistor transistor bl p85 XC6SLX150T spartan 6 LX150t bl p78 transistor CPG196 CSG484 xc6slx75csg484
Contextual Info: Spartan-6 FPGA Packaging and Pinouts Product Specification UG385 v1.2 February 22, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

spartan 6 LX150

Abstract: SPARTAN 6 UG385 CSG484 CSG225 CSG324 SPARTAN-6 transistor bl p89 spartan 6 LX150t transistor bl p44 Tr u28 212
Contextual Info: Spartan-6 FPGA Packaging and Pinouts Product Specification UG385 v1.3 October 12, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

CORE F5A

Contextual Info: Preliminary Data Sheet August 2000 m i c r o e le c t r o n ic s group Lucent Technologies Bell Labs Innovations ORCA Series 4 Field-Programmable Gate Arrays Programmable Features • High-performance platform design. — 0.13 pm seven-level metal technology.

PT43C

Abstract: PR41C pin diagram of ic 7495 shift register CORE F5A Y 928 K00 064 PT42C 21-INPUT pr46c OR4E10 k72 u2
Contextual Info: Preliminary Data Sheet August 2000 ORCA Series 4 Field-Programmable Gate Arrays Programmable Features • ■ High-performance platform design. — 0.13 µm seven-level metal technology. — Internal performance of >250 MHz four logic levels . — I/O performance of >416 MHz for all user I/Os.

Contextual Info: Data Sheet January 3, 2002 ORCA Series 4 FPGAs Introduction • Traditional I/O selections: — LVTTL and LVCMOS 3.3 V, 2.5 V, and 1.8 V I/Os. — Per pin-selectable I/O clamping diodes provide 3.3 V PCI compliance. — Individually programmable drive capability:

pt36c equivalent

Abstract: transistor pt36c pt36c pt35c transistor pt42c datasheet transistor pt36C PT42C l22c INTEL Core i7 860 128x8 ram
Contextual Info: Data Sheet January 15, 2002 ORCA Series 4 FPGAs Introduction • Traditional I/O selections: — LVTTL and LVCMOS 3.3 V, 2.5 V, and 1.8 V I/Os. — Per pin-selectable I/O clamping diodes provide 3.3 V PCI compliance. — Individually programmable drive capability:

transistor pt36c

Abstract: PT18C datasheet transistor pt36C transistor pt42c pt36c pt35c transistor pt31C pt31c PL34C PT36c transistor
Contextual Info: Preliminary Data Sheet December 2000 ORCA Series 4 Field-Programmable Gate Arrays Programmable Features • ■ High-performance platform design. — 0.13 µm seven-level metal technology. — Internal performance of >250 MHz four logic levels . — I/O performance of >416 MHz for all user I/Os.

ES8316

Abstract: ES8316-3 T33 BL gbt16 ES8316-0 bl T29 ES8316-1
Contextual Info: ‹ 1. 2. 3. 4. 特性 CMOS 製程，高性能和高穩定性 低消耗功率 上電依所填之閃法動作 四種閃法,每種 15 段 code 可填 ‹ 說明 ES8316 是一顆可推動 3 種顏色 RGB LED 混成全彩的 IC。接上電源後自動啟動，即依內部之 ROM code

23AT29-S

Contextual Info: MICRO SWITCH FREEPORT IL L IN O IS . U S A A D IV IS IO N OF HO NEYW ELL PCD. H r « . COOK CATALOG 2 3A T29-S ASSEMBLYTO G GLE SWITCH -N .C .T O C .C IR C U IT S MADE LISTING A L L SW ITC H ES (M A IN T A IN E D PO SITIO N ) -N .O . TO C. C IR C U ITS M ADE (A L L S W IT C H E S )( M A IN T A IN E D P O S IT IO N )

tck9

Contextual Info: DATA SHEET 128M bits Self Terminated Interface DDR SDRAM DC0122A 4M words x 32 bits Description Pin Configurations The DC0122A is a 128M bits self terminated interface DDR SDRAM organized as 1,048,576 words × 32 bits × 4 banks. Read and write operations are performed at

1995 AND sdram AND

Contextual Info: DATA SHEET 128M bits Self Terminated Interface DDR SDRAM DC0122A 4M words x 32 bits Description Pin Configurations The DC0122A is a 128M bits self terminated interface DDR SDRAM organized as 1,048,576 words × 32 bits × 4 banks. Read and write operations are performed at

L130C

Abstract: L74c l31c l97c l65c A311TC l146c l48c L202C L235C
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC May 2009 Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

L47C

Abstract: L146C L135 l54c L62C L97C verilog code of prbs pattern generator L71C L235C L43C
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC February 2005 Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

L211C

Abstract: 3100B L17c R68T l71c
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC July 2004 Preliminary Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

L43C

Abstract: L130C l44c L239C l220c L235C L97c L62C L81C l31c
Contextual Info: ORCA ORSPI4 Dual SPI4 Interface and High-Speed SERDES FPSC October 2007 Data Sheet Lattice Semiconductor has developed a next-generation FPSC targeted at high-speed data transmission. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSPI4 FPSC contains two

D207

Contextual Info: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Table 1: • Fully synchronous; all signals registered on positive edge of system clock • VDD/VDDQ = 1.70–1.95V

Contextual Info: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features Table 1: • Fully synchronous; all signals registered on positive

8M16

Abstract: 1300M
Contextual Info: 128Mb: x16, x32 Mobile SDRAM Features Mobile SDRAM MT48LC8M16LF, MT48V8M16LF, MT48LC4M32LF, MT48V4M32LF Features Table 1: • Temperature-compensated self refresh TCSR • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be

90 ball VFBGA

Abstract: 8M16 MT48 MT48LC4M32LF MT48LC8M16LF MT48V4M32LF MT48V8M16LF MT48V8M16LFB4-8 mt48v8m16lfb4 DQ12-DQ15
Contextual Info: 128Mb: x16, x32 Mobile SDRAM Features Mobile SDRAM MT48LC8M16LF, MT48V8M16LF, MT48LC4M32LF, MT48V4M32LF Features Options • Temperature-compensated self refresh TCSR • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be

Contextual Info: 128Mb: x16, x32 Mobile SDRAM Features SYNCHRONOUS DRAM MT48LC8M16LF, MT48V8M16LF, MT48LC4M32LF, MT48V4M32LF Features Table 1: • Temperature-compensated self refresh TCSR • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be

Contextual Info: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Features Table 1: • Fully synchronous; all signals registered on positive