BKJL Search Results

NRVBS2040LT3G

Abstract: 403A-0 MBRS2040LT3G
Contextual Info: MBRS2040LT3G, NRVBS2040LT3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package http://onsemi.com . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation

S3010

Abstract: Scans-0017322
Contextual Info: l8 D5n T P M O Æ -n E H T O Æ TRIODE-PENTODE OBLUME CBEÆ EHM fl T p H O A -n e H T o a b ÔJioKax hhkob GENERAL 1 8 <t>5 n K a a p o B o ii n p e a H a 3H a n e H p a 3BepTKH c n o c j ie z io B a T e j ib H b iM /m a paôoTbi T e jie B H 3 H O H H b ix

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

Contextual Info: MBRS2040LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

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Contextual Info: MBRS2040LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

K511TB1

Abstract: K500TM133T k176kt1 KM155DA3 K155PE3 K500TM131M K511TB K155A K155Kn7 k589
Contextual Info: M H T E rP A il bH blE MMKPOCXEMbl IN T E G R A T E D M IC R O C IR C U IT S H acT b Part I I klH TETPA Jlb H b lE M M KPOCXEM bl U M O P O Bb lE IN TE G R A T ED D IGITAL M ICRO CIRCU ITS B c n e flC T B M e H e n p e p b iB H o r o c o B e p u u e H C T b o b 3 h h j i

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Abstract: MBRS2040LT3
Contextual Info: MOTOROLA Order this document by MBRS2040LT3/D SEMICONDUCTOR TECHNICAL DATA Advance Information Surface Mount Schottky Power Rectifier MBRS2040LT3 SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 40 VOLTS . . . employing the Schottky Barrier principle in a metal–to–silicon power

Contextual Info: MBRS2040LT3G, NRVBS2040LT3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package http://onsemi.com . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation

JFA-8

Contextual Info: b7 UMA8N/FMA8A f t / T ransistors UMA8N FMA8A h y ^ y Z f t l D ual ;U7° Is - 1 M P N P y 'j =] > i fc° ft * y t Epitaxal Planar P N P Silicon Transistor F ÿ ' i /Vlnverter •f > A '— 2 M ini-M old Transistor h 7 >v * $ Driver • i W i \hÜ El/ Dimensions Unit : mm

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Contextual Info: MOTOROLA Order this document by MBRS2040LT3/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBRS2040LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 40 VOLTS . . . employing the Schottky Barrier principle in a m etal-to-silicon power

Narva

Abstract: TX5B Heft 54 Scans-048 aim ac hoe rv heft hcj 6a IH400 siek 1 AE 1000-SS
Contextual Info: p,. c . r y p / i E B C n o n P A H O H H b I M B O n P M H H H B O P A M H 3 A aT e/ibC T B o „ T e x H iK a " K m ob — 1 9 7 0 M 6<D0. 31 0 8 3 T95 YAK 621.327.4/9.(031) CnpaBOHHHK no hohhum npnöopaM. T y p .n e b R . C. «TexHÍK», 1970, 180 crp.

Safer-64

Abstract: zig bee bkjl ATMEGA128L AES-128 EM2420 bluetooth bee KAZAN ember atmel 0743
Contextual Info: 0 6 n a c T M n p iiM e H e H iin CucTeMbi 6e30nacH0CTM, nyjibTb i vnpaBiieHMfl TV VCR, DN/D/CD ynpaBneHne ocBemeHneM, ynpaBneHiie flocTynoM , o6orpeB, BeHTnnflMna, EblTOBAfl 3J1EKTP0HMKA KO H flM M M O H M pO BaH Ue B03flyxa ZigBee EecnpoeodHbie cucmeMbi

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Contextual Info: MOTOROLA Order this document by MBRS2040LT3/D SEMICONDUCTOR TECHNICAL DATA Advance Information Surface Mount Schottky Power Rectifier MBRS2040LT3 SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 40 VOLTS . . . employing the Schottky Barrier principle in a metal–to–silicon power

2T908A

Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,

Contextual Info: MOTOROLA Order this document by MBRS2040LT3/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBRS2040LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 40 VOLTS . . . employing the Schottky Barrier principle in a m etal-to-silicon power

VQB71

Abstract: vqb 71 Halbleiterbauelemente DDR "halbleiterwerk frankfurt" U105D diode sy-250 U107D u311d hfo frankfurt sy 170
Contextual Info: eiecrronic Halbleiter-Bauelemente D ie v o r lie g e n d e Ü b e rs ic h t e n t h ä l t i n g e d rä n g te r Form d ie w ic h tig s te n G renz- und K enndaten d e r i n d e r DDR g e f e r t i g t e n H a lb le ite r b a u e le m e n te . D ie K ennw erte werden im a llg e m e in e n f ü r e in e U m gebungstem peratur von

U840 diode motorola

Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Contextual Info: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in

KC156A

Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
Contextual Info: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:

Contextual Info: MOTOROLA Order this document by MBRS2040LT3/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBRS2040LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES 40 VOLTS . . . em ploying the S chottky B arrier principle in a m e ta l-to -s ilic o n power

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Abstract: MBRS2040LT3
Contextual Info: MBRS2040LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

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Abstract: MBRS2040LT3 MBRS2040LT3G CASE 403A
Contextual Info: MBRS2040LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high

MBRS2040LT3

Abstract: MBRS2040LT3G
Contextual Info: MBRS2040LT3 Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high