BJT HIGH VOLTAGE Search Results

9435R

Abstract: NSB9435T1
Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS

transistor bd 370

Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS

crt horizontal deflection circuit

Abstract: flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver
Contextual Info: September 19, 2000 AN9009 Analysis of a Resonant Type High Voltage Fly-back Converter in a CRT Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea Semiconductor Tel: 82-32-680-1380, Fax:82-32-680-1317

9435R

Abstract: NSB9435T1 NSB9435T1G power BJT PNP
Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com • Collector −Emitter Sustaining Voltage − POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc

diagrama power

Contextual Info: MITSUBISHI LS Is M5M4V4800J,TP,RT-6,-7,-8,-6S,-7S,-8S FAST PAGE MODE 4194304-BJT 524288-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 524288-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed,

Contextual Info: HY62V8400 Series 5 1 2 K x g bjt C M Q S SR A M »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V8400 has a data retention mode that guarantees

transistor 1249

Abstract: UPA800T 1788
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800T UPA800T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS BF 3.84e-16 MJC 0.5 124.9 XCJC NF 1.04 CJS VAF 11.87 VJS 0.75 IKF 0.027 MJS ISE 1e-14 FC 0.5 10e-12 NE 2.17 TF BR

an 214 amp schematic diagram

Abstract: ROHM MCR03 ECB-101161
Contextual Info: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET      InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT

MSM5118160D

Abstract: SOJ42-P-400-1
Contextual Info: O K I Semiconductor M S M 5 1 1 8 1 6 0 D 1rM 8,576-W onJ x 16-BJt DYNAJMC RAM : FAST PAOE MODE TYPE DESCRIPTION The MSM5118160D is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5118160D achieves high integration, high-speed operation, and low-power consumption

iW3623

Abstract: IW3623-00 iW36
Contextual Info: iW3623 AC/DC Digital Power Controller for High Power Factor Off-Line LED Drivers 1.0 Features ●● Isolated AC/DC off-line LED driver ●● Power factor > 0.95 for wide input voltage range 100 – 277VAC ●● Total harmonic distortion THD < 10% ●● Under 5% 100Hz/120Hz output current ripple

AN-1084

Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
Contextual Info: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5

Contextual Info: HV8061 HV8063 Preliminary High-Voltage EL Lamp Driver Ordering Information Package Options Device Input Voltage 8-Lead SO 14-Lead SO Die HV8061 1.0V to 1.6V HV8061 LG HV8061NG HV8061X HV8063 2.4V to 3.5V HV8063LG HV8063NG HV8063X Features General Description

Transistor BJT High Current

Abstract: transistor 1N4148 24v to HV8061 h bridge bjt LQH4N102K04M
Contextual Info: ¡H C HV8061 HV8063 - Prelim inary High-Voltage EL Lamp Driver Ordering Information Package Options Device Input Voltage HV8061 HV8063 8-Lead SO 14-Lead SO Die 1.0V to 1.6V HV8061LG HV8061NG HV8061X 2.4V to 3.5V HV8063LG HV8063NG HV8063X Features General Description

pin details of pwm ic 2003

Abstract: power BJT ICs sl431sf PWM Controller For BJT BJT Gate Drive circuit OPTO ISOLATOR RYC9114-1T Three-terminal Off-line PWM Switch
Contextual Info: R Power Management ICs www.tycopowercomponents.com RYC91xx Document: SCD 25391 Status: Preliminary Rev. A April 16, 2003 PWM Power Supply Controller GENERAL DESCRIPTION FEATURES The RYC91XX is a digital PWM controller designed for small power, universal line voltage applications.

CAPACITOR CGW

Abstract: CGW CAPACITOR
Contextual Info: Supertexinc. HV825 High Voltage EL Lamp Driver Orderinq nformation Package Options Device Input Voltage 8-Lead SO MSOP-8 Die HV825 1.0 to 1,6V HV825LG HV825MG HV825X Features General Description □ Processed with HVCMOS technology □ 1,0V to 1.6V operating supply voltage

Contextual Info: Supertex inc. HV825 Preliminary High Voltage EL Lamp Driver Ordering nformation Package Options Device Input Voltage 8-Lead SO MSOP-8 Die HV825 1.0 to 1.6V HV825LG HV825MG HV825X Features General Description □ Processed with HVCMOS technology □ 1.OV to 1,6V operating supply voltage

Contextual Info: Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation GA15IDDJT22-FR4 VISO,min PDrive, cont PDrive,switch fMAX Features Package •      RoHS Compliant Requires single 12 V voltage supply Two-voltage level topology with low drive losses

AIC1518

Abstract: tl431 sot23 300V dc dc STEP DOWN aic2573 PWM controller sot23-6 AIC1790 AIC1519 sot23 Flyback Controller sot23-5 MC34063a driver led step-up AIC1784
Contextual Info: ✎ ☛ Output Voltage V Output Current Output Voltage Accuracy ✏ Package Low Dropout Linear Regulator Supervisory p8 $,& $,& $,& $,& AIC1084 7 1.5/1.8/2.5/3.3/adj 5A ±1% TO220, TO252, TO263 AIC1085 7 1.5/1.8/2.5/3.3/adj. 3A

VA36

Abstract: DD 127 D TRANSISTOR 1N4148 HV825 HV825LG HV825LG-G HV825MG HV825MG-G TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Supertex inc. HV825 High Voltage EL Lamp Driver IC Features ► ► ► ► ► ► ► General Description Processed with HVCMOS technology 1.0V to 1.6V operating supply voltage DC to AC conversion Output load of typically up to 6nF Adjustable output lamp frequency

Contextual Info: HV825 High Voltage EL Lamp Driver IC Features ► ► ► ► ► ► ► General Description Processed with HVCMOS technology 1.0V to 1.6V operating supply voltage DC to AC conversion Output load of typically up to 6nF Adjustable output lamp frequency Adjustable converter frequency

Contextual Info: HV8051 HV8053 fàk Super te x inc. Preliminary High-Voltage EL Lamp Driver Ordering Information Package Options Device Input Voltage 8-Lead P-Dip 8-Lead SO Die HV8051 1.0V to 1.6V HV8051P HV8051LG HV8051X HV8053 2.4V to 3.5V HV8053P HV8053LG HV8053X Features

AN-H33

Abstract: 1mh inductor 1mh inductor design 1n4148 die 1N4148 Fast Switching Diode 1N4148 HV8051 HV8051LG HV8051X HV8053
Contextual Info: HV8051 HV8053 – E T E L – OBSO High-Voltage EL Lamp Driver Ordering Information Package Options Device Input Voltage 8-Lead SO Die HV8051 1.0V to 1.6V HV8051LG HV8051X HV8053 2.4V to 3.5V HV8053LG HV8053X General Description Features The Supertex HV8051 and HV8053 are high-voltage drivers

AIC2857

Abstract: AIC2858 AIC2562 AIC2341
Contextual Info: Quick Reference - Power Conversion Linear Voltage Regulator/Voltage Reference INDEX Smart Low Dropout Ultra Low Dropout AIC1531 AIC1532 AIC1729 Quick Reference Quick Reference - Power Conversion P.1 .

C2171

Contextual Info: C2171/2 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation  Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost design