BJT 138 Search Results

crt horizontal deflection circuit

Abstract: flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver
Contextual Info: September 19, 2000 AN9009 Analysis of a Resonant Type High Voltage Fly-back Converter in a CRT Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea Semiconductor Tel: 82-32-680-1380, Fax:82-32-680-1317

power bjt advantages and disadvantages

Abstract: HXTR-3101 Design DC Stability Into Your Transistor Circuits Hxtr 3101 transistor TRANSISTORS BJT list Silicon Bipolar Transistor Hewlett-Packard Hewlett-Packard transistor microwave IRB1 HBFP0405 HBFP-0405
Contextual Info: A Comparison of Various Bipolar Transistor Biasing Circuits Application Note 1293 Introduction The bipolar junction transistor BJT is quite often used as a low noise amplifier in cellular, PCS, and pager applications due to its low cost. With a minimal number

monolithic amplifier MAR 3 app note

Abstract: HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ
Contextual Info: Maxim > App Notes > ASICs WIRELESS, RF, AND CABLE Keywords: Maxim, QuickChip, silicon bipolar, LNA, 1.9 GHz, QuickChip 9, semi-custom, ASIC, low noise amplifier, quick chip Mar 17, 2000 APPLICATION NOTE 644 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz

124e transistor

Abstract: 2SB1443 Q2SB1443
Contextual Info: SPICE PARAMETER 2SB1443 by ROHM TR Div. * Q2SB1443 PNP BJT model * Date: 2006/11/16 .MODEL Q2SB1443 PNP + IS=270.00E-15 + BF=215.55 + VAF=46.700 + IKF=6.7887 + ISE=270.00E-15 + NE=1.5952 + BR=9.3196 + VAR=100 + IKR=.37039 + ISC=7.9519E-12 + NC=1.3623 + NK=.95496

124e transistor

Abstract: 2SA1797 Q2SA1797 9519
Contextual Info: SPICE PARAMETER 2SA1797 by ROHM TR Div. * Q2SA1797 PNP BJT model * Date: 2006/11/16 .MODEL Q2SA1797 PNP + IS=270.00E-15 + BF=215.55 + VAF=46.700 + IKF=6.7887 + ISE=270.00E-15 + NE=1.5952 + BR=9.3196 + VAR=100 + IKR=.37039 + ISC=7.9519E-12 + NC=1.3623 + NK=.95496

4606

Abstract: 2SD1383K MJE447 Darlington npn darlington 1384 5000E-9
Contextual Info: SPICE PARAMETER 2SD1383K * 2SD1383K DARLINGTON NPN BJT model * Date: 2006/12/13 *C B E .SUBCKT 2SD1383K 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 1.350 R1 4 3 4k .MODEL Q1model NPN + IS=30.00E-15 + BF=400 + VAF=50 + IKF=.1221 + ISE=30.00E-15

power BJT

Abstract: HP8971C MMIC s-band monolithic amplifier MAR MONOLITHIC AMPLIFIERS GST-2 silicon bipolar transistor low noise amplifier amplifier lna low noise amplifier s-band TRANSISTOR noise figure measurements HP8970B
Contextual Info: ASICs Application Note 644: Mar 17, 2000 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz 1998 IEEE. Reprinted, with permission, from 1998 IEEE Microwave and Guided Wave Letters, Vol. 3, No. 3, pp. 136-137 Abstract A two-stage 1.9GHz monolithic low-noise amplifier LNA with a measured noise figure of

6DI30A-120

Abstract: transistor 3Ft transistor and schematic symbols M606 fuji bjt
Contextual Info: 6DI30A-120 FUJI BTD8DE 6-Pack BJT 1200 V 30 A • Outline Drawings POWER TRANSISTOR MODULE I «.I « ^ Features • SW /± EU 0V EV BWEW fïi * EX High Voltage • 7»j — y Krt / f t A C Motor Controls . Air Conditionens t #*14 • Maximum Ratings and Characteristics

Contextual Info: 2SA706-2 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)7.9 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

KF 35 transistor

Abstract: power bjt transistor 600v 690 lc b20 diode two transistors IEBo-400mA fblu 3A500
Contextual Info: 2-Pack BJT 600 V e o,v 150 A 2D11500-050 ^ L /l I l $ 1 O u t l i n e Drawings POWER TRANSISTOR MODULE • # 4 : Features m y \ —Tfrj i) • hFE*v'iS t' • : t — K rt/K Including Free Wheeling Diode High DC Current Gain Insulated Type I Applications

bjt 50a

Abstract: M603 fuji bjt fuji bjt 6-pack power bjt transistor 600v 6di 120 50C-050 transistor and schematic symbols
Contextual Info: FUJI 6-Pack BJT 600 V 50 A 6DI50C-050 [M L S m S O e l £ POWER TRANSISTOR MODULE f '• Outline Drawings LÖÖ^JM 4 18-5 I 18"5""i" 18-5 |fiÖij 4-^5.a ! Features • K r tlt -y i — y f z j i) ' s f ? j • h F E ^ iS ^ ' In c lu d in g Free W h e e lin g D iode

UTC TDA2822

Abstract: BJT8050 TDA2822 s GF06 TDA28 JP13 JP16 PA15 0.1uf 0603 vr-10k
Contextual Info: eSLZ000 EMFeSL XC Board for eSL Series 16-Bit DSP Sound Processor USER’S HANDBOOK Doc. Version V0.1 ELAN MICROELECTRONICS CORP. April 2008 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

BJT with i-v characteristics

Abstract: AD620 B4001 ad620 filter bjt differential amplifier application circuits op amp op80 AD621 AD827 AD845 OP249
Contextual Info: MT-096 TUTORIAL RFI Rectification Concepts INPUT-STAGE RFI RECTIFICATION SENSITIVITY A well-known but poorly understood phenomenon in analog integrated circuits is RFI rectification, specifically as it occurs in op amps and in-amps. While amplifying very small

rca 17520

Abstract: TRANSISTOR SMD nc46 8050 smd 3 pin transistor ice 0565 SMD TRANSISTOR ss 8050 transistor 8050 smd smd 8050 transistor 8050 smd transistor smd transistor 8050 pa15 transistor
Contextual Info: ICEeSL-U XA In-Circuit Emulation Board for eSL/eAM Series 16-Bit DSP Sound Processor USER’S HANDBOOK Doc. Version V0.2 ELAN MICROELECTRONICS CORP. August 2006 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

NCP1450ASN50T1

Abstract: 27T1 bjt ce amplifier JESD22-A114 JESD22-A115 JESD78 NCP1450A NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1
Contextual Info: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step-up DC-DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large

NCP1450ASN50T1

Abstract: DAZ sot23-5 design bjt oscillator
Contextual Info: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step-up DC-DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large

NCP1450

Abstract: NCP1450ASN50T1G NCP1450ASN50T1 NCP1450A NCP1450ASN19T1 NCP1450ASN19T1G NCP1450ASN27T1 NCP1450ASN27T1G NCP1450ASN30T1 NCP1450ASN30T1G
Contextual Info: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step−up DC−DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large

NCP1450ASN50T1

Contextual Info: NCP1450A PWM Step-up DC-DC Controller The NCP1450A series are PWM step–up DC–DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large

NCP1450ASN50T1

Abstract: 5 pin IC marking DAZ TSOP30
Contextual Info: Back NCP1450A PWM Step-up DC-DC Controller The NCP1450A series are PWM step–up DC–DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large

design bjt oscillator

Abstract: NCP1450ASN50T1 DAZ sot23-5 "BJT Transistors" power transistor bjt 1000 a sot23-5 dbd A114 A115 JESD22 NCP1450ASN19T1
Contextual Info: NCP1450A PWM Step-up DC-DC Controller The NCP1450A series are PWM step–up DC–DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large

Contextual Info: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step−up DC−DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large

5 pin IC marking DAZ

Abstract: power BJT BJT IC Vce C5 MARKING TRANSISTOR D 2689 NCP1450ASN50T1G bjt ce amplifier application MOSFET CURRENT output impedance Inductor 10 H delta rectifier all model
Contextual Info: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step−up DC−DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large

Contextual Info: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area

HCPL-322J

Contextual Info: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity