BJT 12 Search Results

Contextual Info: LM95245 LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation Technology for 45nm Process Literature Number: SNIS148F LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm® BJT Beta Compensation Technology for 45nm

2N3904

Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

RTU620

Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

power BJT

Abstract: bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant
Contextual Info: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ● Primary-side feedback eliminates opto-isolators and simplifies design ● Internal 800-V bipolar junction transistor BJT

Contextual Info: iW1816 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● Adaptively controlled soft start-up enables fast and

NE68019

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68019 Q1 Collector Base Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 3.84e-16 MJC BF 124.9 XCJC NF 1.05 CJS UNITS Parameter seconds 0.64 capacitance farads inductance henries resistance ohms volts amps

bjt 137

Abstract: 50E-12 NESG2030M16
Contextual Info: NONLINEAR MODEL NESG2030M16 CCB SCHEMATIC LCX LBX Collector LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NESG2030M16 IS 2.42e-13 MJC 0.16 CCB 0.04e-12 BF 500 XCJC 1

50E-12

Abstract: bjt 137
Contextual Info: NONLINEAR MODEL NESG2030M04 CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NESG2030M04 IS 2.42e-13 MJC 0.16 CCB 0.07e-12 BF

Contextual Info: NONLINEAR MODEL NE667M04 CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 ADDITIONAL PARAMETERS Parameters NE667M04 Parameters Q1 Parameters Q1 IS 2.75e-16 MJC 0.37 CCB 0.07e-12 BF 192.5

NPN transistor 2n3904 beta value

Abstract: bjt 2N3904 2N3904 npn bjt transistor 2n3904 npn fairchild beta MMBT3904FSCT 2N3904 transistor equivalent BJT 2n3904 temp sensor 2n3904 equivalent transistor of 2n3904 TRANSISTORS BJT list
Contextual Info: AN 12.14 Remote Thermal Sensing Diode Selection Guide 1 Preface This application note provides guidance to designers of systems that use thermal sensors with remote diodes. A discrete bipolar junction transistor BJT is commonly used as the remote diode. This

Contextual Info: NE68030 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units time seconds IS 3.84e-16 MJC 0.64 BF 124.9 XCJC capacitance farads

2 GHz BJT

Abstract: 0415E
Contextual Info: NE68733 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 8e-17 MJC 0.53 time seconds BF 128 XCJC 0.27 capacitance farads

NE681M03

Abstract: var 431
Contextual Info: NONLINEAR MODEL SCHEMATIC NE681M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter time Units seconds IS 239.6e-18 MJC 0.223 BF 125 XCJC capacitance farads NF

50E-12

Abstract: bjt microwave 15 GHz NE52418
Contextual Info: NONLINEAR MODEL NE52418 CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NE52418 IS 7.8e-25 MJC 0.07 CCB 0.02e-12 BF 158 XCJC

ne85630

Abstract: 32E-16
Contextual Info: NONLINEAR MODEL SCHEMATIC NE85630 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 6e-16 MJC 0.55 time seconds BF 120 XCJC 0.3 capacitance farads

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68033 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 3.84e-16 MJC 0.64 time seconds BF 124.9 XCJC capacitance farads

Contextual Info: NE68019 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters Q1 1 UNITS Parameter Units IS 3.84e-16 MJC 0.64 time seconds BF 124.9 XCJC capacitance farads NF 1.05

Contextual Info: NONLINEAR MODEL NE661M04 CCBPKG SCHEMATIC CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NE661M04 IS 2.2e-18 MJC 0.33 CCB 0.08e-12 BF 120 XCJC

Contextual Info: NE68730 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 8e-17 MJC 0.53 time seconds BF 128 XCJC 0.27 capacitance farads

056E-9

Abstract: NE85619
Contextual Info: NE85619 NONLINEAR MODEL SCHEMATIC CCBPKG Q1 CCB LCX LBX Collector LB Base CCE LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units time seconds IS 6e-16 MJC 0.55 capacitance farads BF 120 XCJC 0.3 inductance

NE85633

Contextual Info: NONLINEAR MODEL NE85633 SCHEMATIC CCBPKG Q1 CCB LCX LBX Collector LB Base CCE CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 6e-16 MJC 0.55 time seconds BF 120 XCJC 0.3 capacitance farads

13E12

Abstract: NE58219
Contextual Info: NONLINEAR MODEL NE58219 SCHEMATIC CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NE58219 CCB 0.03e-12 IS 2.3e-16 MJC 0.28 CCE 0.2e-12 BF 100.3 XCJC

bjt microwave GHz

Abstract: NE68700 026E-12 bjt microwave 15 GHz 026E-9 60E-12 68700
Contextual Info: NE68700 NONLINEAR MODEL SCHEMATIC Q1 CCB LB LC CCE LE BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Parameters Q1 Parameters Q1 IS 8.0e-17 MJC 0.53 time Units seconds BF 128 XCJC 0.27 capacitance farads NF 1.0 CJS inductance henries VAF 17 VJS 0.75 resistance