BJE 80 Search Results

1E14

Abstract: 2E12 FSPJ264D1 FSPJ264F FSPJ264R Rad Hard in Fairchild for MOSFET
Contextual Info: FSPJ264R, FSPJ264F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle PJ2 R, PJ2 bje dia de , GR ista Cha l wer SF ) tho yw s dia de , GR ista Cha l wer SF , rchi Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance

R1560P2

Contextual Info: ISL9R1560P2 Data Sheet Title L9 560 bje A, 0V alth ode) utho eyw s tersi File Number 4913.2 15A, 600V Stealth Diode Features The ISL9R1560P2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

M37753FFCFP

Abstract: mitsubishi inverter air conditioning mitsubishi 7700 machine instruction M37753FFCHP d1047
Contextual Info: MITSUBISHI MICROCOMPUTERS Y NAR M37753FFCFP M37753FFCHP MI ELI . ion. hange icat ecif ct to c p s al bje a fin are su not s is is ric limit h T met ice: Not e para Som PR SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER FLASH MEMORY VERSION DESCRIPTION APPLICATION The M37753FFCFP and the M37753FFCHP are single-chip microcomputers designed with high-performance CMOS silicon gate technology, including the internal flash memory. These are housed in

Contextual Info: MITSUBISHI MICROCOMPUTERS Y NAR M37753FFCFP M37753FFCHP MI ELI . ion. hange icat ecif ct to c p s al bje a fin are su not s is is ric limit h T met ice: Not e para Som PR SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER FLASH MEMORY VERSION DESCRIPTION APPLICATION The M37753FFCFP and the M37753FFCHP are single-chip microcomputers designed with high-performance CMOS silicon gate technology, including the internal flash memory. These are housed in

mitsubishi inverter air conditioning

Abstract: M37754FFCGP M37754FFCHP
Contextual Info: MITSUBISHI MICROCOMPUTERS Y NAR M37754FFCGP M37754FFCHP MI ELI ion. hange. icat ecif ct to c p s al bje a fin are su not s is is ric limit h T met ice: Not e para Som PR SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER FLASH MEMORY VERSION DESCRIPTION APPLICATION The M37754FFCGP and the M37754FFCHP are single-chip microcomputers designed with high-performance CMOS silicon gate technology, including the internal flash memory. These are housed in

Contextual Info: bJE 1 • MMRbSDB QDS3b74 5 m HB56A169 Series ■HITS HI TA C H I / L O G I C / A R R A Y S / M E M — 1 6 ,7 7 7 ,2 1 6 -W o rd x 9 -B it H igh D e n s ity D y n a m ic R A M M o d u le T he H B 56A 169 is a 16 M x 9 dyn am ic RA M m o d u le , m o u n te d 9 p iec es o f 16-M bit D R A M

SI-20080

Abstract: lzl 60 c TD-60
Contextual Info: & •vSUUJLr-ÆUUUl^r- u P Îl I f -ÆUUUUr- -'•nm n- '• n m n jjm m - ELECTRICAL SPECIFICATIONS: FREQUENCY RETURN LOSS: 1.0 DIFFERENTIAL TO COMMON 2 .0 3 .0 NEAR REJ: END C R O S S -T A L K INSERTION LOSS (MHz VALU E 1 TD 30 31 TD 60 61 TD 80 81 TD 100

Contextual Info: IBM 43RF1111 Preliminary SiGe High Dynamic Range 800-2000 MHz Low Noise Am plifier Features • 0.8 to 2G H z operation fo r cellular and digital w ireless applications • High IIP3 and Low Noise m eet dem anding system requirem ents • Low power, single supply 3 volts

Scans-0017239

Contextual Info: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS: N D TE S 1.0 TURNS RATIO: P 6 - P 5 - P 4 : (J 6 -J3 ) ( P 3 - P 2 - P 1 ) : (J 2 -J1 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE : 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE : (P6,P5,P4) TO (J6.J3)

fC CONNECTOR DRAWING

Contextual Info: J1 J2 J3 J4 J5 J6 J7 J8 TX+ TXRX+ RX- ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 1 -P 3 : (J 1 -J 2 ) (P 4 -P 6 ) : (J 3 -J 6 ) : 1CT : 1CT ± 2% : 1CT : 1CT ± 2% Bel Stewart Connector 11118 Susquehanna Trail, South Glen Rock, Pa 17327-9199 717.234.7512

FL128

Contextual Info: 1CT ! 1CT TD SHIELD lOOOpF, 2 K V NDTES 1.0 PINS WITHDUT ELECTRICAL CDNNECTIDN ARE DMITTED, 2.0 A LL RESISTORS ARE ±57. TDLERANCE, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 7 - P 6 - P 8 : (J 3 -J6 ) ( P 1 - P 3 - P 2 ) : (J 1 -J2 ) 1CT 1CT 2.0 INDUCTANCE:

y11t

Contextual Info: lOOOpFj 2 K V NDTES ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 6 - P 5 - P 4 : (J 6 -J3 ) ( P 3 - P 2 - P 1 ) : (J 2 -J1 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE : 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE : (P6,P5,P4) TO (J6.J3)

Contextual Info: 1CT ! 1CT TD SHIELD lOOOpF, 2 K V NDTES 1.0 PINS WITHDUT E L E C T R I C A L CDNNECTIDN ARE DMITTED, 2.0 A L L RESISTORS ARE ± TOLERANCE, ELECTRICAL SPECIFICATIONS: 1 .0 TURNS RATIO: P 7 - P 6 - P 8 (P 1 -P 3 -P 2 ) : (J 3 -J 6 ) : (J 1 -J 2 ) 2 .0 INDUCTANCE:

FL128

Contextual Info: 1CT ! 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT rd - P 6 CHASSIS G N d (P 8 ) lOOOpF, 2 K V TX+ TXRX+ RX- NDTES 1.0 COMPLIES WITH THE EUROPEAN D IR E C T IV E 2 0 0 2 / 9 5 / E C , CALLIN G FDR THE ELIMINATION OF LEAD AND CITHER HAZARDOUS SUBSTAN CES FROM

M37920F8MHP

Abstract: RASH M37920FCMHP M37920FGMHP 2TC15 0p27
Contextual Info: Y NAR I MITSUBISHI MICROCOMPUTERS . e n. atio chang cific o spe bject t l a u fin s ot a its are is n m This etric li : e m ic Not e para Som IM REL M37920F8MHP, M37920FCMHP, M37920FGMHP P SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER FLASH MEMORY VERSION DESCRIPTION

Contextual Info: 1CT ! 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT rd- P 6 CHASSIS GNd ( P 8 ) lOOOpF, 2 K V TX+ TXRX+ RX- NDTES 1.0 COMPLIES WITH THE EUROPEAN D IR EC TIV E 2 0 0 2 /9 5 /E C , CALLING FDR THE ELIMINATION OF LEAD AND CITHER HAZARDOUS SUBSTANCES FROM ELECTRONIC PRODUCTS,

Contextual Info: TD+ PI 1CT i 1CT TD- CP3, \ Cm TCT (P2 RD+ (P4 RD- (P6 RCT (P5 I s ju u u rs m n n \ J1 J2 J3 J4 J5 J6 J7 J8 \ \ -j \ 1CT i 1CT (• TX+ TXRX+ RX- POE POE(P10 0,1 IF, 2 KV ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: (P 1 -P 3 ) : (J 1 -J 2 ) (P 4 -P 6 ) : (J 3 -J 6 )

30047

Contextual Info: UPPER ROW LDWER ROW 1000PF, 2KV 1000PF, 2KV ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: O'C TO + 7 0 ’C 1.0 TURNS RATIO: P 1 - P 2 - P 3 : (J 1 -J2 ) ( P 4 - P 5 - P 6 ) : (J 3 -J6 ) 1CT : 1 ± 3 % 1CT : 1 ± 3 % 2.0 INDUCTANCE : 350uH MIN.

0725l

Contextual Info: lO O O p F j £ K V ELECTRICAL SPECIFICATIONS: NOTES 1.0 TURNS RATIO: P 6 - P 5 - P 4 : (J 6 -J3 ) ( P 3 - P 2 - P 1 ) : (J 2 -J1 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE : 350uH MIN. 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE : (P6.P5.P4) TO (J6.J3)

SI4001

Abstract: RT-128
Contextual Info: PINS 1000pF+g0°/ j 2KV 48,5 o NOTES ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 8 - P 6 - P 7 : (J 6 -J3 ) ( P 2 - P 3 - P 1 ) : (J 2 -J1 ) 1CT : 1 ± 3 % 1CT : 1 ± 3 % 2.0 INDUCTANCE : 350uH MIN. 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE:

si-50001

Abstract: PSL 6
Contextual Info: 1CT i 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT O CHASSIS GND 1 TX+ TXRX+ RX- lO O O p F, 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO : P 4 - P 5 - P 6 (P 3 -P 2 -P 1 ) 1,0 PINS WITHDUT E L E C T R I C A L CDNNECTIDN ARE DMITTED, 2.0 INDUCTANCE :

Contextual Info: lOOOpFj £KV NOTES ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 6 - P 5 - P 4 : ( J 6 - J 3 ) (P 3 -P 2 -P 1 ) : (J2 -J1 ) (P 6 -P 4 ) (P 3 -P 1 ) 2.0 INDUCTANCE : 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE : (P6,P5,P4) TO (J6.J3) (P3,P2,P1 ) TO (J2.J1)

M37753M8C-XXXFP

Abstract: M37753M8C-XXXHP M37753S4CFP M37753S4CHP
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: MI I L E Y NAR . . tion hange c ifica pec ject to s l fina sub ot a its are is n his tric lim T : me ice Not e para Som PR MITSUBISHI MICROCOMPUTERS M37753M8C-XXXFP, M37753M8C-XXXHP M37753S4CFP, M37753S4CHP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER • Instruction execution time