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    BIPOLAR POWER TRANSISTOR DATA Search Results

    BIPOLAR POWER TRANSISTOR DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    27LS03DM/B
    Rochester Electronics LLC 27LS03 - 64-Bit Low-Power Inverting-Output Bipolar RAM PDF Buy
    27LS03/BEA
    Rochester Electronics LLC 27LS03 - 64-Bit Low-Power Inverting-Output Bipolar RAM - Dual marked (8605106EA) PDF Buy
    MC1505L
    Rochester Electronics LLC MC1505 - A/D Converter, 1 Func, Bipolar, CDIP16 PDF Buy
    27S191DM/B
    Rochester Electronics LLC AM27S191 - 2048x8 Bipolar PROM PDF Buy

    BIPOLAR POWER TRANSISTOR DATA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pk mur460

    Abstract: MC1391P MUR460 PK 221D 2N5337 2N6191 MC7812 MJ11016 MJE16204 MJF16204
    Contextual Info: MOTOROLA Order this document by MJE16204/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    MJE16204/D MJE16204 MJE16204 MJE16204/D* pk mur460 MC1391P MUR460 PK 221D 2N5337 2N6191 MC7812 MJ11016 MJF16204 PDF

    369D

    Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
    Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG PDF

    AT-64023

    Abstract: S21E
    Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic


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    AT-64023 AT-64023 5965-8916E S21E PDF

    vce 1200 and 5 amps npn transistor to 220 pack

    Abstract: 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
    Contextual Info: MOTOROLA Order this document by MJE18004/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES


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    E69369 MJE18004/D* MJE18004/D vce 1200 and 5 amps npn transistor to 220 pack 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105 PDF

    MJD18002D2

    Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
    Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain


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    MJD18002D2 MJD18002D2 r14525 MJD18002D2/D MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1 PDF

    MC7812

    Abstract: MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337 MJL16218
    Contextual Info: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device POWER TRANSISTOR 15 AMPERES


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    MJL16218/D MJL16218* MJL16218 MC7812 MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337 PDF

    Contextual Info: MOTOROLA O rder this docum ent by BUL147/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet BUL147* B U L147F* SW ITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES


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    BUL147/D BUL147* L147F* BUL147/BUL147F BUL44F 221D-02 O-220 PDF

    Contextual Info: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SCANSWITCH™ NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors "Motorola Preferred Device POWER TRANSISTOR 15 AMPERES 1500 VOLTS — VcES


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    MJL16218/D MJL16218 MJL16218 PDF

    Transistor TL 31 AC

    Abstract: j142
    Contextual Info: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


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    SGA9089Z OT-89 SGA9089Z 50MHz 44GHz 170mA DS110606 Transistor TL 31 AC j142 PDF

    Contextual Info: What HEWLETTÍ mLfíM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features functions. The 20 emitter finger interdigitated geometry yields a • High Output Power: 12.0 dBm Typical PxdB at 2.0 GHz medium sized transistor with


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    AT-42010 AT-42010 Rj/50 DD17bSfl M4475fl4 PDF

    transistor b 595

    Abstract: ATC100A PH1819-45
    Contextual Info: = z-P= Coming Attractions an AMP company Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metalization System


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    PHl819-45 transistor b 595 ATC100A PH1819-45 PDF

    MJE1123

    Abstract: LT1123
    Contextual Info: MOTOROLA Order this document by MJE1123/D SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout


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    MJE1123/D MJE1123 MJE1123 MJE1123/D* LT1123 PDF

    ZXT10P40DE6

    Abstract: ZHCS750 AN40 FCX718 FMMT718 MLP322 ZXT10P20DE6 ZXT13P20DE6 ZXT13P40DE6 ZXT2M322
    Contextual Info: www.zetex.com Company proprietary – Sales network use only Know–how New product information from Zetex May 2004 ZX5T2E6 bipolar transistor: increased power handling from compact PNP Features Benefits • Latest generation bipolar technology • High efficiency solution


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    PDF

    transistor j5

    Abstract: ER105 diode j54 PH1920-45 transistor npn a 1930 wacom transistor 930 1/transistor j5
    Contextual Info: SE z-z * =g = -= -A = = -r an AMP company Wireless Bipolar Power Transistor, 45W 1930 - 1990 MHz PHI 920-45 Features NPN Silicon Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Diffused Emitter Ballasting Gold Metalization System


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    PDF

    transistor mje13007 equivalent

    Abstract: Motorola AN222A MJF13007 MJE13007D motorola an569 thermal 221D AN719 AN873 AN875 MJE13007
    Contextual Info: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching


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    MJE13007/D MJE13007 MJF13007 MJE/MJF13007 MJE13007/D* transistor mje13007 equivalent Motorola AN222A MJF13007 MJE13007D motorola an569 thermal 221D AN719 AN873 AN875 MJE13007 PDF

    Contextual Info: W tiol H EW LETT mL'HM PA C K A R D Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features D escription • High Output Power: 27.5 dBm Typical Px^ at 2.0 GHz 26.5 dBm Typical Px^ at 4.0 GHz The AT-64020 is a high perfor­ m ance NPN silicon bipolar


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    AT-64020 AT-64020 QQ17b7fi 5965-8915E PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


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    R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    IRG4BC30W

    Contextual Info: PD - 91629A IRG4BC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


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    1629A IRG4BC30W IRG4BC30W PDF

    MJL3281A MJL1302A

    Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
    Contextual Info: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


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    MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors PDF

    2STN2540

    Abstract: JESD97 N2540
    Contextual Info: 2STN2540 Low voltage fast-switching PNP power bipolar transistor Preliminary Data General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package


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    2STN2540 OT-223 2002/93/EC OT-223 2STN2540 JESD97 N2540 PDF

    2SC3365 -TO3

    Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
    Contextual Info: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.


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    GD1377Ã 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC3365 -TO3 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979 PDF

    ic AM 12A

    Abstract: AN-994 IRG4BC30W-S
    Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


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    IRG4BC30W-S ic AM 12A AN-994 IRG4BC30W-S PDF

    AT41485

    Contextual Info: Thal H E W L E T T * mLfiM P A C K A R D Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features diate sized transistor with imped­ ances that are easy to match for low noise and moderate power applications. Applications include


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    AT-41485 AT-41485 ionimpla27 Kn/50 DD17b43 AT41485 PDF

    Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


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    MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212 PDF