BIPOLAR POWER TRANSISTOR DATA Search Results
BIPOLAR POWER TRANSISTOR DATA Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 27LS03DM/B |
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27LS03 - 64-Bit Low-Power Inverting-Output Bipolar RAM |
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| 27LS03/BEA |
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27LS03 - 64-Bit Low-Power Inverting-Output Bipolar RAM - Dual marked (8605106EA) |
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| MC1505L |
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MC1505 - A/D Converter, 1 Func, Bipolar, CDIP16 |
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| 27S191DM/B |
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AM27S191 - 2048x8 Bipolar PROM |
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BIPOLAR POWER TRANSISTOR DATA Datasheets Context Search
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tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
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Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920 | |
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Contextual Info: LFP AK 56 D PHPT610030NK NPN/NPN high power double bipolar transistor 20 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK. |
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PHPT610030NK OT1205 LFPAK56D) PHPT610030PK. PHPT610030NPK. AEC-Q101 | |
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Contextual Info: LFP AK 56 D PHPT610035NK NPN/NPN high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/NPN high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. Matched version of PHPT610030NK. |
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PHPT610035NK OT1205 LFPAK56D) PHPT610030NK. PHPT610035PK. PHPT610035NPK. AEC-Q101 | |
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Contextual Info: LFP AK 56 D PHPT610030NPK NPN/PNP high power double bipolar transistor 14 October 2014 Product data sheet 1. General description NPN/PNP high power double bipolar transistor in a SOT1205 LFPAK56D SurfaceMounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. |
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PHPT610030NPK OT1205 LFPAK56D) PHPT610030NK. PHPT610030PK. AEC-Q101 | |
D 400 F 6 F BIPOLAR TRANSISTOR
Abstract: BUK856-400 BUK856-400IZ igbt philips
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BUK856-400 O220AB D 400 F 6 F BIPOLAR TRANSISTOR BUK856-400IZ igbt philips | |
02D2G
Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
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MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G MJD18002D2T4G 18002d2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12 | |
pk mur460
Abstract: MC1391P MUR460 PK 221D 2N5337 2N6191 MC7812 MJ11016 MJE16204 MJF16204
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MJE16204/D MJE16204 MJE16204 MJE16204/D* pk mur460 MC1391P MUR460 PK 221D 2N5337 2N6191 MC7812 MJ11016 MJF16204 | |
transistor bh ra
Abstract: WE VQE 24 E D 400 F 6 F BIPOLAR TRANSISTOR WE VQE 11 E BUK856-800A T0220AB M 615 transistor
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BUK856-800A T0220AB transistor bh ra WE VQE 24 E D 400 F 6 F BIPOLAR TRANSISTOR WE VQE 11 E BUK856-800A M 615 transistor | |
at 64000
Abstract: at64000 S21E at-64000
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AT-64000 AT-64000 AT-64000-GP4 AV01-0274EN at 64000 at64000 S21E | |
369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
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BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 | |
369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
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BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG | |
D42DG
Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
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BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105 | |
igbt 800A
Abstract: BUK856-800A transistor parameters igbt philips
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O220AB igbt 800A BUK856-800A transistor parameters igbt philips | |
BUK854-800 applications
Abstract: BUK854-800 datasheet BUK854-800 BUK854-800A transistor igbt
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O220AB BUK854-800 applications BUK854-800 datasheet BUK854-800 BUK854-800A transistor igbt | |
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HALL EFFECT 21E
Abstract: thyristor aeg aeg thyristor transistor Common Base configuration general electric C22B equivalent transistor bc 172 b aeg 2101 thyristor bipolar power transistor data BC 148 TRANSISTOR sot-23 npn marking code cr
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AT-64023
Abstract: S21E
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AT-64023 AT-64023 5965-8916E S21E | |
AT64020
Abstract: AT-64020
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AT-64020 AT-64020 5965-8915E AT64020 | |
common emitter amplifier
Abstract: zo 107 P 55 NFO transistor w 04 59 UHF transistor GHz AT-42070 S21E AT42070
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AT-42070 AT-42070 5966-4845E 5989-2654EN common emitter amplifier zo 107 P 55 NFO transistor w 04 59 UHF transistor GHz S21E AT42070 | |
20/IGBT FF 450Contextual Info: N AMER PHILIPS/DISCRETE b'lE ]> • bbSBIBl 0 0 3 0 1 :1.1 633 « A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor Protected IGBT QUICK REFERENCE DATA GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in |
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O220AB BUK856-450IX 20/IGBT FF 450 | |
transistor s11 s12 s21 s22Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic |
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AT-64023 AT-64023 5965-8916E transistor s11 s12 s21 s22 | |
AT-64020
Abstract: S21E
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AT-64020 AT-64020 5965-8915E S21E | |
200 mil BeO package
Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 AT-64020 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107
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AT-64020 AT-64020 5965-8915E 5989-2657EN 200 mil BeO package RF NPN POWER TRANSISTOR 2.5 GHZ TRANSISTOR 023 data sheet IC 74 IC vhf/uhf Amplifier ic-110 RF NPN POWER TRANSISTOR 3 GHZ RF POWER TRANSISTOR NPN zo 107 | |
MJF18008 equivalent
Abstract: MJF18008 MPF930 MTP8P10 MUR105 221D MJE18008 MJE210
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MJE18008/D* MJE18008/D MJF18008 equivalent MJF18008 MPF930 MTP8P10 MUR105 221D MJE18008 MJE210 | |
221D
Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
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MJE18006/D* MJE18006/D 221D MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105 | |