BIPOLAR POWER TRANSISTOR DATA Search Results
BIPOLAR POWER TRANSISTOR DATA Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 27LS03DM/B |
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27LS03 - 64-Bit Low-Power Inverting-Output Bipolar RAM |
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| 27LS03/BEA |
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27LS03 - 64-Bit Low-Power Inverting-Output Bipolar RAM - Dual marked (8605106EA) |
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| MC1505L |
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MC1505 - A/D Converter, 1 Func, Bipolar, CDIP16 |
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| 27S191DM/B |
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AM27S191 - 2048x8 Bipolar PROM |
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BIPOLAR POWER TRANSISTOR DATA Datasheets Context Search
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pk mur460
Abstract: MC1391P MUR460 PK 221D 2N5337 2N6191 MC7812 MJ11016 MJE16204 MJF16204
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MJE16204/D MJE16204 MJE16204 MJE16204/D* pk mur460 MC1391P MUR460 PK 221D 2N5337 2N6191 MC7812 MJ11016 MJF16204 | |
369D
Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
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BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG | |
AT-64023
Abstract: S21E
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AT-64023 AT-64023 5965-8916E S21E | |
vce 1200 and 5 amps npn transistor to 220 pack
Abstract: 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
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E69369 MJE18004/D* MJE18004/D vce 1200 and 5 amps npn transistor to 220 pack 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105 | |
MJD18002D2
Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
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MJD18002D2 MJD18002D2 r14525 MJD18002D2/D MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1 | |
MC7812
Abstract: MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337 MJL16218
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MJL16218/D MJL16218* MJL16218 MC7812 MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337 | |
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Contextual Info: MOTOROLA O rder this docum ent by BUL147/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet BUL147* B U L147F* SW ITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR 8.0 AMPERES |
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BUL147/D BUL147* L147F* BUL147/BUL147F BUL44F 221D-02 O-220 | |
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Contextual Info: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SCANSWITCH™ NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors "Motorola Preferred Device POWER TRANSISTOR 15 AMPERES 1500 VOLTS — VcES |
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MJL16218/D MJL16218 MJL16218 | |
Transistor TL 31 AC
Abstract: j142
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SGA9089Z OT-89 SGA9089Z 50MHz 44GHz 170mA DS110606 Transistor TL 31 AC j142 | |
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Contextual Info: What HEWLETTÍ mLfíM PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features functions. The 20 emitter finger interdigitated geometry yields a • High Output Power: 12.0 dBm Typical PxdB at 2.0 GHz medium sized transistor with |
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AT-42010 AT-42010 Rj/50 DD17bSfl M4475fl4 | |
transistor b 595
Abstract: ATC100A PH1819-45
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PHl819-45 transistor b 595 ATC100A PH1819-45 | |
MJE1123
Abstract: LT1123
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MJE1123/D MJE1123 MJE1123 MJE1123/D* LT1123 | |
ZXT10P40DE6
Abstract: ZHCS750 AN40 FCX718 FMMT718 MLP322 ZXT10P20DE6 ZXT13P20DE6 ZXT13P40DE6 ZXT2M322
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transistor j5
Abstract: ER105 diode j54 PH1920-45 transistor npn a 1930 wacom transistor 930 1/transistor j5
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transistor mje13007 equivalent
Abstract: Motorola AN222A MJF13007 MJE13007D motorola an569 thermal 221D AN719 AN873 AN875 MJE13007
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MJE13007/D MJE13007 MJF13007 MJE/MJF13007 MJE13007/D* transistor mje13007 equivalent Motorola AN222A MJF13007 MJE13007D motorola an569 thermal 221D AN719 AN873 AN875 MJE13007 | |
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Contextual Info: W tiol H EW LETT mL'HM PA C K A R D Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features D escription • High Output Power: 27.5 dBm Typical Px^ at 2.0 GHz 26.5 dBm Typical Px^ at 4.0 GHz The AT-64020 is a high perfor m ance NPN silicon bipolar |
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AT-64020 AT-64020 QQ17b7fi 5965-8915E | |
RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
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R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 | |
IRG4BC30WContextual Info: PD - 91629A IRG4BC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies |
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1629A IRG4BC30W IRG4BC30W | |
MJL3281A MJL1302A
Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
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MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors | |
2STN2540
Abstract: JESD97 N2540
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2STN2540 OT-223 2002/93/EC OT-223 2STN2540 JESD97 N2540 | |
2SC3365 -TO3
Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
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GD1377Ã 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC3365 -TO3 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979 | |
ic AM 12A
Abstract: AN-994 IRG4BC30W-S
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IRG4BC30W-S ic AM 12A AN-994 IRG4BC30W-S | |
AT41485Contextual Info: Thal H E W L E T T * mLfiM P A C K A R D Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features diate sized transistor with imped ances that are easy to match for low noise and moderate power applications. Applications include |
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AT-41485 AT-41485 ionimpla27 Kn/50 DD17b43 AT41485 | |
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Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors |
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MJW16212/D MJF18002 MJE18002) MJF18004 MJE18004) MJF18006 MJE18006) MJF18008 MJE18008) MJW16212 | |