BIPOLAR BC TRANSISTOR Search Results

BIPOLAR BC TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet
TTC5712	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=3 A / hFE=400~1000 / VCE(sat)=0.14 V / tf=120 ns / PW-Mini	Datasheet
TPCP8512	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PS-8	Datasheet

BIPOLAR BC TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Transistor BC 227 Contextual Info: PD-9.1620 International I R Rectifier IRG4 BC 2 0 K-S prelim inary Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =1 Ops, @360V VCE start , T j = 125°C, V ge = 15V	OCR Scan	554s2 transistor bc 227	PDF
transistor BC SERIES Abstract: bd transistor series BC transistor series BIPOLAR TRANSISTOR 2n transistor KSA transistor D.A.T.A. book ksd transistor series bd transistor data book Contextual Info: TRANSISTOR DATA BOOK Small Signal TR KSA Ser es KSB Ser es KSC Ser es KSD Ser es KSK Ser es KSR Ser es 2N Ser es BC Ser es KST Ser es KSP Ser es SS Ser es Bipolar Power TR KSA Series KSB Series KSC Series KSD Series BD Series BU Series KSH Series KSE Series	OCR Scan	transistor bc series bd transistor series bc transistor series bipolar transistor 2n +5transistor ksa transistor d.a.t.a. book ksd transistor series bd transistor data book	PDF
bc 617 transistor equivalent Abstract: FMMT-617 FMMT617 TRANSISTOR BC 846B sf 818 transistor BC808 BC818 FMMT620 FMMT717 FMMT720 Contextual Info: Application Note 15 Issue 1 November 1995 Application Note 15 Issue 1 November 1995 Features and Applications of the FMMT617 and FMMT717 “SuperSOT” SOT23 Transistors The FMMT717, though not quite as good as it’s NPN counterpart, still gives excellent performance. It is a 12V PNP	Original	fmmt617 fmmt717 160mv 100ma +8bc 617 transistor equivalent fmmt-617 transistor bc 846b sf 818 transistor bc808 bc818 fmmt620 fmmt720	PDF
BSS125 Abstract: transistor BC SERIES BUZ MOSFET 4013 flipflop FREDFET bc 4013 MOS 4011 TRANSISTOR BC 560 bipolar BC transistor Baw delay line Contextual Info: FREDFET Power Half-Bridge: Short-Circuit Proof through Light-Link Components Appnote 43 by Walter Schumbrutzki With higher clock frequencies in power switches inversecapable MOS power transistors FREDFET are going to replace bipolar devices. In the low power range (≤ 2 kW)	Original	bss125 transistor bc series buz mosfet 4013 flipflop +6fredfet bc 4013 mos 4011 transistor bc 560 bipolar bc transistor baw delay line	PDF
bc 5411 Abstract: BC107 pin configuration BC108 pin configuration BC108 transistor BC108 BC107 BC107 DATASHEET bc108b equivalent BC107B Transistor BC107 Contextual Info: BC107/BC108 Series Low Power Bipolar Transistors General Purpose Amplifier/Switches Feature: • NPN Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27	Original	bc107/bc108 bc107 bc108 bc 5411 +7bc107 pin configuration bc108 pin configuration bc108 transistor bc107 datasheet bc108b equivalent bc107b transistor bc107	PDF
HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design Contextual Info: RMO1D-1 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design Tzung-Yin Lee and Yuh-Yue Chen Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents a methodology to characterize and model BJT’s mismatch behavior for RFIC	Original	40pa/pm2 200pa/pm2 hf mismatch characterization and modeling of bipolar transistors for rfic design	PDF
603 transistor npn Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906 Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type	OCR Scan	000b515 2n918 2n2222a 2n2369 +142n2484 2n2907a 2n2945 2n3019 2n3117 2n3251a 603 transistor npn 2n3906 ds transistor bc 312 603 transistor npn dj bipolar bc transistor bc847c di pn 2n2222a 2n3904 2n3906	PDF
W67B Contextual Info: Section E: Bipolar Transistors _ Loin S a tu ra tio n T ra n s is to rs up to I OOV S O T 2 3 M e d iu m P ow e r P N P L o w V o lta g e up to 100V Pinout Details: 1-Collector, 2-Emitter, 3-Base V CBO V CEO h FE lc Type	OCR Scan	bcx17 bc807 bc807-16 bc807-25 +6bc807-40 bc808 bc808-16 bc808-25 bc808-40 w67b	PDF
FMMT634TA Abstract: FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage	Original	ot223 150ma fzt560 gl-106 +9fmmt634ta fmmta42qta fzt689bta fzt1151 fmmt6517ta dual pnp transistor fmmt734ta fmmt723ta fr107-t-f	PDF
ssot-6 Abstract: MMBT pnp FJ sot23 sot 223 fairchild Contextual Info: Discrete Power and Signal Technologies Fairchild S em iconductor Selection Guides Surface Mount Bipolar Transistors G eneral Purpose A m p lifie rs and S w itches Part lc mA BV Min Number - Min M ax P ackage mA NPN I MMBT100 45 500 100 MMBT3904 40 200 Ü§	OCR Scan	mmbt100 mmbt3904 mmbt2222a mmbt4401 +9mmbta05 pzt2222a pzt3904 nmt2222a ot-23 ssot-6 mmbt pnp fj sot23 sot 223 fairchild	PDF
diac D30 Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551 Contextual Info: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED	OCR Scan	ot-23 c-120 conventn1711 2n1893 +162n2102 2n2218a 2n2219a 2n3019 2n3503 2n3700 diac d30 db3 diac bc 9013 marking 4d npn zn 5551 diode diac db3 equivalent bzxs4c24v 8z-2 9014 sot-23 zt 5551	PDF
BC177 NPN transistor Abstract: BC177 pnp transistor Transistor BC 177 Datasheet Transistor BC177 BC177 transistor BC178-BC179 BC177 NPN transistor datasheet BC178B transistor bc178 BC178 Contextual Info: BC177 BC178 BC179 MECHANICAL DATA Dimensions in mm inches GENERAL PURPOSE SMALL SIGNAL PNP BIPOLAR TRANSISTOR 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) APPLICATIONS ) ) 1 7 1 . ( ( 3	Original	bc177 bc178 bc179 bc177 npn transistor +8bc177 pnp transistor transistor bc 177 datasheet transistor bc177 bc177 transistor bc178-bc179 bc177 npn transistor datasheet bc178b transistor bc178	PDF
bc557 Abstract: BDX472 BDX452 Contextual Info: Philips Semiconductors Concise Catalogue 1996 Small-signal transistors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS GENERAL-PURPOSE L.F. BIPOLAR TRANSISTORS CONTINUED _ LEADED TYPES ratings type num ber characteristics	OCR Scan	bc160 bc161 bc177 bc327 +8bc328 bc369 bc556 bc557 bc558 bc636 bdx472 bdx452	PDF
603 transistor npn Abstract: BT 316 transistor Contextual Info: ALLEGRO MICROSYSTEMS INC BIPOLAR TRANSISTORS bbE i • DSDH33Ô Q00bS17 23Ö * A L G R ELECTRICAL CHARACTERISTICS at TA= + 25°C A 'cBO 'c Max. V T BR CBO V ’ (BR)CEO V ¥(BR)EBO Max. (V) (nA) 'cEO @ V CB Max. @ V CE (V) (nA) (V) — — — — — —	OCR Scan	dsdh33 q00bs17 d40d11 thc40d11 +6d41d11 thc41d11 0s0433fl 05d433fl 603 transistor npn bt 316 transistor	PDF

lm 7803 Abstract: "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor 60GHz transistor AVALANCHE TRANSISTOR 60Ghz TRANSISTOR 30GHZ 30GHZ Contextual Info: IEEE BCTM 10.1 A Comprehensive Bipolar Avalanche Multiplication Compact Model for Circuit Simulation WJ. Kloosterman, J.C.J. Paasschens, and R.J. Havens Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands tel.: +31 40 2744093, email: Willy.Kloosterman@philips.com	OCR Scan	30ghz 60ghz ed-42 ed-39 +7lm 7803 bjt transistors transistor as bc 158 bipolar bc transistor 60ghz transistor avalanche transistor transistor 30ghz	PDF
RF Transistor s-parameter Abstract: bipolar transistor s-parameter lm 7803 s-parameter RF POWER TRANSISTOR NPN BJT with i-v characteristics transistor D 5032 bipolar transistor ghz s-parameter 60Ghz TRANSISTOR 30GHZ qubic4 Contextual Info: IEEE BCTM 10.2 An S-parameter Technique for Substrate Resistance Characterization of RF Bipolar Transistors S.D. Harker, R.J. Havenst , J.C.J. Paasschenst , D. Szmyd, L.F. Tiemeijer, and E.F. Weagel ‘ Philips Semiconductors, 9201 Pan American Frwy. NE, Albuquerque, NM 87113, USA	OCR Scan	rf transistor s-parameter bipolar transistor s-parameter lm 7803 s-parameter rf power transistor npn +6bjt with i-v characteristics transistor d 5032 bipolar transistor ghz s-parameter 60ghz transistor 30ghz qubic4	PDF
NF 847 G Abstract: NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X Contextual Info: System Overview Outdoor Unit SAT - TV Low Noise Converter LNC RF Amplifier Mixer Oscillator 3. Stage active passive CFY 35-20 CFY 35-23 BAT 15-099/ BAT 15-04 IF-Amplifier 1. Stage 2. Stage BFP 405 BFP 420 CFY 30/ BFP 405 Power Supply 2 x BCX 51 3 x BC 858/W	OCR Scan	858/w 857/w iq62702-c1847 q62702-c954 +1662702-c1884 q62702-c1850 q62702-c1742 q62702-f1393 q62702-f1394 q62703-f97 nf 847 g nf 833 nf 739 ba 857 k d 998 0 bat 99 diode bav siemens transistors rf cfy 35-20 6149-5x	PDF
SiC BJT Abstract: Transistor BC 457 bipolar transistor ghz s-parameter 4h sic rf POWER BJTs RF transistors with s-parameters RF Transistor s-parameter NPN transistor mhz s-parameter bipolar transistor s-parameter RF Bipolar Transistor Contextual Info: Copyright c [Year] IEEE. Reprinted from (relevant publication info). This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Advanced Power Technology's products or services. Internal or personal use of this material is permitted. However, permission to	Original	sic bjt transistor bc 457 bipolar transistor ghz s-parameter 4h sic +6rf power bjts rf transistors with s-parameters rf transistor s-parameter npn transistor mhz s-parameter bipolar transistor s-parameter rf bipolar transistor	PDF
BTA18 Abstract: MMBT pnp BT5771 SOT23 M Contextual Info: Fairchild Semiconductor Qjscrete pQwer an j SjQna\| JeChnOlOQieS Selection Guides Surface Mount Bipolar Transistors (continued Low Noise Amplifiers Part Number NF (dB) M ax BV Min Mm T » 6 nA Package V20S ÛI SOT-23 m 10 SOT-23 1 SOT-23 NMi M M B T 5089	OCR Scan	bta18 ot-23 bc857c bc858c +4bc859c mmbt pnp bt5771 sot23 m	PDF
THC3251A Abstract: pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE 2N2222A 2N2369 Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) — — Device Allegro	OCR Scan	sg433a 2n918 thc918 2n2222a +14thc2222a 2n2369 thc2369 2n2484 thc2484 2n2907a thc3251a pnp for 2n3019 312 2n3904 2n4033 2n3906 ds 2n3117 2n5401 2n3904 bcy71 alternative	PDF
transistor BC 245 Abstract: 420 transistor Infineon Technologies transistor 4 ghz infineon rf smd package amplifier TRANSISTOR 14 GHZ RF TRANSISTOR SOT23 5 BFP420 smd transistor infineon RF Semiconductors TRANSISTOR BC 136 Contextual Info: Application Note No. 001 Discrete & RF Semiconductors SIEGET 25 Low Noise Amplifier with BFP 420 Transistor at 2.4 GHz The SIEMENS Grounded Emitter Transistor Line is a completely new generation of silicon bipolar junction RF-transistors. This application note describes a low-noise amplifier with the	Original	transistor bc 245 420 transistor infineon technologies transistor 4 ghz infineon rf smd package +6amplifier transistor 14 ghz rf transistor sot23 5 bfp420 smd transistor infineon rf semiconductors transistor bc 136	PDF
Contextual Info: Small-signal Discretes • 0.5 - 8 A, ≤ 100 V, single, double configurations incl. BISS load switches; 13 package options • High voltage transistors 150 - 500 V, 0.1 - 2 A incl. low VCEsat; 5 package options • Resistor-equipped transistors 0.1 - 0.6 A, ≤ 50 V; 8 package options	Original	ot223/sot89 2n7002	PDF
transistor bc 7-40 Abstract: 6mbi100fc 6MBI100FC060 American Microsemiconductor 6MBI100FC-060 Contextual Info: 6MBI100FC-060 FUJI Electric IGBT Transistor Module Advancing the Semiconductor Industry Since 1972 Abstract The 6MBI100FC-060 is a discontinued insulated-gate bipolar transistor in a modular package by FUJI Electric, currently in “Last Time Buy” sale through American	Original	6mbi100fc-060module 6mbi100fc-060 as/en/jisq9100 iso9001 +4transistor bc 7-40 6mbi100fc 6mbi100fc060 american microsemiconductor	PDF
372M Abstract: BC372M Contextual Info: Section S: Bipolar Transistors D a rlin g to n T r a n s is to rs E-Line PIMP High Perform ance D a r l i n g t o n T r a n s ' s t o i s - Po = up t 1W} Pinout :1-Collector, 2-Base,	OCR Scan	fxt705 psa12p 372m bc372m	PDF

BIPOLAR BC TRANSISTOR Search Results

BIPOLAR BC TRANSISTOR Result Highlights (5)

BIPOLAR BC TRANSISTOR Datasheets Context Search

Transistor BC 227

transistor BC SERIES

bc 617 transistor equivalent

BSS125

bc 5411

HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design

603 transistor npn

W67B

FMMT634TA

ssot-6

diac D30

BC177 NPN transistor

bc557

603 transistor npn

lm 7803

RF Transistor s-parameter

NF 847 G

SiC BJT

BTA18

THC3251A

transistor BC 245

transistor bc 7-40

372M